Takip et
Faraz Najam
Faraz Najam
Korea University, University of Southampton, Hankyong National University
hankyong.ac.kr üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Impact of Quantum Confinement on Band-to-Band Tunneling of Line-Tunneling Type L-Shaped Tunnel Field-Effect Transistor
F Najam, YS Yu
IEEE Transactions on Electron Devices 66 (4), 2010-2016, 2019
342019
Interface trap density of gate-all-around silicon nanowire field-effect transistors with TiN gate: Extraction and compact model
F Najam, YS Yu, KH Cho, KH Yeo, DW Kim, JS Hwang, S Kim, SW Hwang
IEEE transactions on electron devices 60 (8), 2457-2463, 2013
222013
Two-dimensional (2D) transition metal dichalcogenide semiconductor field-effect transistors: the interface trap density extraction and compact model
F Najam, MLP Tan, R Ismail, YS Yu
Semiconductor Science and Technology 30 (7), 075010, 2015
172015
General SPICE Modeling Procedure for Double-Gate Tunnel Field-Effect Transistors
F Najam, M Loong Peng, YS Yu
Journal of information and communication convergence engineering 14 (2), 115-121, 2016
132016
Compact trap-assisted-tunneling model for line tunneling field-effect-transistor devices
F Najam, YS Yu
Applied Sciences 10 (13), 4475, 2020
92020
GFETSIM: Graphene Field-Effect Transistor Simulator of Interface Charge Density
MLPT Chie Hou Leong, Huei Chaeng Chin, Chin Wei Ang, Chin Khai Ng, Faraz ...
J. Nanoelectron. Optoelectron 12, 304-315, 2017
92017
Metal oxide-graphene field-effect transistor: interface trap density extraction model
F Najam, KC Lau, CS Lim, YS Yu, MLP Tan
Beilstein journal of nanotechnology 7 (1), 1368-1376, 2016
92016
Compact model for L-shaped tunnel field-effect transistor including the 2D region
F Najam, YS Yu
Applied Sciences 9 (18), 3716, 2019
72019
Gate all around metal oxide field transistor: Surface potential calculation method including doping and interface trap charge and the effect of interface trap charge on …
F Najam, S Kim, YS Yu
JSTS: Journal of Semiconductor Technology and Science 13 (5), 530-537, 2013
72013
Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors
CH Leong, MW Chuan, KL Wong, F Najam, YS Yu, MLP Tan
Semiconductor Science and Technology 35 (4), 045023, 2020
62020
Compact Current Model of Single-Gate/Double-Gate Tunneling Field-Effect Transistors
YS Yu, F Najam
Journal of Electrical Engineering and Technology 12 (1), 1921-718, 2017
62017
Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope
F Najam, YS Yu
Electronics 7 (11), 275, 2018
52018
Investigation of Corner Effect and Identification of Tunneling Regimes in L-Shaped Tunnel Field-Effect-Transistor
F Najam, YS Yu
J. Nanosci. Nanotechnol 18 (9), 6578 - 6583, 2018
42018
Physically consistent method for calculating trap-assisted-tunneling current applied to line tunneling field-effect transistor
F Najam, S Kim, WY Choi, YS Yu
IEEE Transactions on Electron Devices 67 (5), 2106-2112, 2020
32020
Compact Capacitance Model of L-Shape Tunnel Field-Effect Transistors for Circuit Simulation.
YS Yu, F Najam
Journal of Information & Communication Convergence Engineering 19 (4), 2021
22021
The effect of trapped charge on silicon nanowire pseudo-MOSFETs
I Nam, M Kim, F Najam, E Lee, S Hwang, S Kim
Journal of nanoscience and nanotechnology 13 (9), 6409-6412, 2013
22013
Macro-modeling of P-type Feedback Field-Effect Transistor
JH Oh, F Najam, YS Yu
INTERNATIONAL CONFERENCE ON FUTURE INFORMATION & COMMUNICATION ENGINEERING …, 2022
2022
Dual-Oxide Negative Capacitance Tunneling Field-Effect Transistor for Steepest Subthreshold Performance
F Najam, YS Yu
INTERNATIONAL CONFERENCE ON FUTURE INFORMATION & COMMUNICATION ENGINEERING …, 2021
2021
Compact Capacitance Model of L-Shaped Tunneling Field-effect Transistors
YS Yu, F Najam
INTERNATIONAL CONFERENCE ON FUTURE INFORMATION & COMMUNICATION ENGINEERING …, 2021
2021
Numerical Implementation of Hurkx Trap-Assisted-Tunneling Model
F Najam, YS Yu
한국정보통신학회 종합학술대회 논문집 23 (2), 681-682, 2019
2019
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