Ayan Kar
Ayan Kar
Verified email at intel.com - Homepage
Title
Cited by
Cited by
Year
Observation of ultraviolet emission and effect of surface states on the luminescence from tin oxide nanowires
A Kar, MA Stroscio, M Dutta, J Kumari, M Meyyappan
Applied Physics Letters 94 (10), 101905, 2009
692009
Applications of colloidal quantum dots
K Sun, M Vasudev, HS Jung, J Yang, A Kar, Y Li, K Reinhardt, P Snee, ...
Microelectronics Journal 40 (3), 644-649, 2009
572009
22FFL: A high performance and ultra low power FinFET technology for mobile and RF applications
B Sell, B Bigwood, S Cha, Z Chen, P Dhage, P Fan, M Giraud-Carrier, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.4. 1-29.4. 4, 2017
522017
Growth and properties of tin oxide nanowires and the effect of annealing conditions
A Kar, MA Stroscio, M Dutta, J Kumari, M Meyyappan
Semiconductor science and technology 25 (2), 024012, 2010
492010
Rapid thermal annealing effects on tin oxide nanowires prepared by vapor–liquid–solid technique
A Kar, J Yang, M Dutta, MA Stroscio, J Kumari, M Meyyappan
Nanotechnology 20 (6), 065704, 2009
432009
Tailoring the surface properties and carrier dynamics in SnO2 nanowires
A Kar, MA Stroscio, M Meyyappan, DJ Gosztola, GP Wiederrecht, M Dutta
Nanotechnology 22 (28), 285709, 2011
392011
Evidence of compositional inhomogeneity in alloys using ultraviolet and visible Raman spectroscopy.
A Kar, D Alexson, M Dutta, MA Stroscio
Journal of Applied Physics 104 (7), 073502, 2008
342008
Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film
A Kar, N Shukla, E Freeman, H Paik, H Liu, R Engel-Herbert, ...
Applied Physics Letters 102 (7), 072106, 2013
322013
Investigation of nucleation mechanism and tapering observed in ZnO nanowire growth by carbothermal reduction technique
A Kar, KB Low, M Oye, MA Stroscio, M Dutta, A Nicholls, M Meyyappan
Nanoscale Res Lett 6 (1), 3, 2011
282011
Probing ultrafast carrier dynamics in silicon nanowires
A Kar, PC Upadhya, SA Dayeh, ST Picraux, AJ Taylor, RP Prasankumar
IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 889-895, 2010
262010
Characterization and modeling of metal-insulator transition (MIT) based tunnel junctions
E Freeman, A Kar, N Shukla, R Misra, R Engel-Herbert, D Schlom, ...
70th Device Research Conference, 243-244, 2012
142012
The influence of radial heterostructuring on carrier dynamics in gallium nitride nanowires
A Kar, Q Li, PC Upadhya, M Ah Seo, J Wright, TS Luk, GT Wang, ...
Applied Physics Letters 101 (14), 143104, 2012
102012
Preliminary Investigation on the Modification of Electronic Properties in Surface Passivated SnO2 Nanowires with Schottky contacts on being Exposed to 137Cs γ-radiation
A Kar, R Ahern, N Gopalsami, AC Raptis, MA Stroscio, M Dutta
Journal of Applied Physics 111 (8), 084319, 2012
72012
Electronic properties of Y‐junctions in SnO2 nanowires
A Kar, MA Stroscio, M Dutta, M Meyyappan
physica status solidi (b) 248 (12), 2848-2852, 2011
42011
Ground state energy in a spherical GaAs-(Al, Ga) As quantum dot with parabolic confinement
A Kar, C Bose
Indian Journal of Physics 80, 357-360, 2006
32006
Defect Passivation in Nanowires and Demonstration of Nanowire Devices for Use in Sensing Applications
A Kar
University of Illinois at Chicago, 2012
12012
Metal oxide nanowire growth for nanotechnology-enhanced device applications
MM Oye, J Gacusan, O Lenz, T Ngo-Duc, JM Velazquez, E Arreola, ...
Nanoepitaxy: Materials and Devices III 8106, 81060G, 2011
12011
Observation of ultraviolet and visible luminescence due to the presence of defect states in the forbidden bandgap of tin oxide nanowires.
A Kar, MA Stroscio, M Dutta, J Kumari, M Meyyappan
2009 IEEE Nanotechnology Materials and Devices Conference, 121-125, 2009
12009
Finfet based capacitors and resistors and related apparatuses, systems, and methods
KAR Ayan, K Phoa, JS Sandford, J Wan, AA Ahsan, LR Paulson, B Sell
US Patent App. 16/650,321, 2020
2020
Finfet varactor quality factor improvement
HJ Lee, M Armstrong, S Morarka, C Nieva-lozano, KAR Ayan
US Patent App. 16/147,205, 2020
2020
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