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Guven Cankaya
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Growth of homogenous CuO nano-structured thin films by a simple solution method
F Bayansal, S Kahraman, G Çankaya, HA Çetinkara, HS Güder, ...
Journal of Alloys and Compounds 509 (5), 2094-2098, 2011
1052011
Barrier characteristics of Cd/p-GaTe Schottky diodes based on I–V–T measurements
B Abay, G Çankaya, HS Güder, H Efeoglu, YK Yogurtcu
Semiconductor science and technology 18 (2), 75, 2002
802002
Electrical and interface state density properties of polyaniline–poly-3-methyl thiophene blend/p-Si Schottky barrier diode
S Sönmezoğlu, S Şenkul, R Taş, G Çankaya, M Can
Solid State Sciences 12 (5), 706-711, 2010
642010
Effective atomic numbers for CoCuNi alloys using transmission experiments
O İçelli, S Erzeneoğlu, İH Karahan, G Çankaya
Journal of Quantitative Spectroscopy and Radiative Transfer 91 (4), 485-491, 2005
642005
Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes
K Akkiliç, A Türüt, G Cankaya, T Kiliçoğlu
Solid State Communications 125 (10), 551-556, 2003
592003
Schottky barrier height dependence on the metal work function for p-type Si Schottky diodes
G Çankaya, N Ucar
Zeitschrift für Naturforschung A 59 (11), 795-798, 2004
582004
Electrical characteristics of DNA-based metal-insulator-semiconductor structures
S Sönmezoğlu, ÖA Sönmezoğlu, G Çankaya, A Yıldırım, N Serin
Journal of Applied Physics 107 (12), 2010
512010
Phase transformation of nanostructured titanium dioxide thin films grown by sol–gel method
S Sönmezoğlu, G Çankaya, N Serin
Applied Physics A 107, 233-241, 2012
482012
Electrical characterization of metal/diamond-like carbon/inorganic semiconductor MIS Schottky barrier diodes
N Basman, N Aslan, O Uzun, G Cankaya, U Kolemen
Microelectronic Engineering 140, 18-22, 2015
462015
Synthesis of sol–gel derived nano-crystalline ZnO thin films as TCO window layer: effect of sol aging and boron
SF Varol, G Babür, G Çankaya, U Kölemen
RSC advances 4 (100), 56645-56653, 2014
392014
Electrical characteristics of an organic thin copolymer/p-Si Schottky barrier diode
S Sönmezoğlu, S Şenkul, R Taş, G Çankaya, M Can
Thin Solid Films 518 (15), 4375-4379, 2010
392010
Influence of annealing temperature on structural, morphological and optical properties of nanostructured TiO2 thin films
S Sönmezoğlu, G Çankaya, N Serin
Materials Technology 27 (3), 251-256, 2012
332012
Current-and capacitance-voltage characteristics of Cd/p-GaTe Schottky barrier diodes under hydrostatic pressure
G Çankaya, B Abay
Semiconductor science and technology 21 (2), 124, 2005
322005
Fabrication of p-type CuSCN/n-type micro-structured ZnO heterojunction structures
E Bacaksiz, S Aksu, G Çankaya, S Yılmaz, İ Polat, T Küçükömeroğlu, ...
Thin Solid Films 519 (11), 3679-3685, 2011
282011
The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0. 7Ga0. 3 (Se1− xTex) 2 (0≤ x≤ 1) amorphous semiconductor thin films
A Karatay, B Küçüköz, G Çankaya, A Ates, A Elmali
Optical Materials 73, 20-24, 2017
272017
The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes
S Fiat, İ Polat, E Bacaksiz, M Kompitsas, G Çankaya
Current Applied Physics 13 (6), 1112-1118, 2013
232013
Effect of hydrostatic pressure on the characteristic parameters of Au/n-GaAs Schottky-barrier diodes
G Çankaya, N Uçar, E Ayyildiz, H Efeoğlu, A Türüt, S Tüzemen, ...
Physical Review B 60 (23), 15944, 1999
231999
Hydrostatic pressure dependence of interface state density of Cd/n-type GaAs Schottky barrier diodes
S Sönmezoğlu, F Bayansal, G Çankaya
Physica B: Condensed Matter 405 (1), 287-290, 2010
212010
Fabrication and electrical characterization of pyrrole–aniline copolymer-based Schottky diodes
S Sönmezoğlu, CB Durmuş, R Taş, G Çankaya, M Can
Semiconductor science and technology 26 (5), 055011, 2011
202011
Electrical characterization of a pre-ceramic polymer modified Ag/poly(hydridocarbyne)/p-Si Schottky barrier diode
N Başman, O Uzun, S Fiat, C Alkan, G Çankaya
Journal of Materials Science: Materials in Electronics 23, 2282-2288, 2012
192012
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