Change of InAs/GaAs quantum dot shape and composition during capping H Eisele, A Lenz, R Heitz, R Timm, M Dähne, Y Temko, T Suzuki, K Jacobi Journal of Applied Physics 104 (12), 124301, 2008 | 127 | 2008 |
Reversed truncated cone composition distribution of In0. 8Ga0. 2As quantum dots overgrown by an In0. 1Ga0. 9As layer in a GaAs matrix A Lenz, R Timm, H Eisele, C Hennig, SK Becker, RL Sellin, UW Pohl, ... Applied physics letters 81 (27), 5150-5152, 2002 | 111 | 2002 |
Self-organized formation of GaSb/GaAs quantum rings R Timm, H Eisele, A Lenz, L Ivanova, G Balakrishnan, DL Huffaker, ... Physical review letters 101 (25), 256101, 2008 | 81 | 2008 |
Structure and intermixing of GaSb∕ GaAs quantum dots R Timm, H Eisele, A Lenz, SK Becker, J Grabowski, TY Kim, ... Applied physics letters 85 (24), 5890-5892, 2004 | 71 | 2004 |
20 Gb/s 85C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots F Hopfer, A Mutig, G Fiol, M Kuntz, VA Shchukin, VA Haisler, T Warming, ... IEEE Journal of Selected Topics in Quantum Electronics 13 (5), 1302-1308, 2007 | 68 | 2007 |
Quantum ring formation and antimony segregation in nanostructures R Timm, A Lenz, H Eisele, L Ivanova, M Dähne, G Balakrishnan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 57 | 2008 |
Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy A Lenz, H Eisele, R Timm, SK Becker, RL Sellin, UW Pohl, D Bimberg, ... Applied physics letters 85, 3848, 2004 | 56 | 2004 |
Atomic structure and optical properties of InAs submonolayer depositions in GaAs A Lenz, H Eisele, J Becker, JH Schulze, TD Germann, F Luckert, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011 | 54 | 2011 |
Direct measurement of the band gap and Fermi level position at P Ebert, S Schaafhausen, A Lenz, A Sabitova, L Ivanova, M Daehne, ... Applied physics letters 98 (6), 062103, 2011 | 51 | 2011 |
Direct measurement and analysis of the conduction band density of states in diluted GaAs 1− x N x alloys L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz, R Timm, O Schumann, ... Physical Review B 82 (16), 161201, 2010 | 48 | 2010 |
Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs S Harrison, MP Young, PD Hodgson, RJ Young, M Hayne, L Danos, ... Physical Review B 93 (8), 085302, 2016 | 46 | 2016 |
Structure of InAs/GaAs quantum dots grown with Sb surfactant R Timm, H Eisele, A Lenz, TY Kim, F Streicher, K Pötschke, UW Pohl, ... Physica E: Low-dimensional Systems and Nanostructures 32 (1-2), 25-28, 2006 | 44 | 2006 |
Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a capping layer O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ... Physical Review B 71 (24), 245316, 2005 | 43 | 2005 |
Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a Ga As 1− x N x capping layer O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ... Physical Review B 71 (24), 245316, 2005 | 43 | 2005 |
Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs A Lenz, H Eisele, J Becker, L Ivanova, E Lenz, F Luckert, K Pötschke, ... Applied physics express 3 (10), 105602, 2010 | 38 | 2010 |
A. Lenz, H. Eisele, J. Becker, L. Ivanova, E. Lenz, F. Luckert, K. Pötschke, A. Strittmatter, UW Pohl, D. Bimberg, and M. Dähne, Appl. Phys. Express 3, 105602 (2010). A Lenz Appl. Phys. Express 3, 105602, 2010 | 38* | 2010 |
Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy H Eisele, A Lenz, C Hennig, R Timm, M Ternes, M Dähne Journal of crystal growth 248, 322-327, 2003 | 35 | 2003 |
Confined States of Individual Type-II GaSb/GaAs Quantum Rings Studied by Cross-Sectional Scanning Tunneling Spectroscopy R Timm, H Eisele, A Lenz, L Ivanova, V Vosseburger, T Warming, ... Nano letters 10 (10), 3972-3977, 2010 | 34 | 2010 |
Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters NN Ledentsov, F Hopfer, A Mutig, VA Shchukin, AV Savel'ev, G Fiol, ... Physics and Simulation of Optoelectronic Devices XV 6468, 64681O, 2007 | 32 | 2007 |
Growth of In0. 25Ga0. 75As quantum dots on GaP utilizing a GaAs interlayer G Stracke, A Glacki, T Nowozin, L Bonato, S Rodt, C Prohl, A Lenz, ... Applied Physics Letters 101 (22), 223110, 2012 | 27 | 2012 |