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Hüseyin ÇAKMAK
Hüseyin ÇAKMAK
The Agency for Science, Technology and Research (A*STAR)
Verified email at ime.a-star.edu.sg
Title
Cited by
Cited by
Year
Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications
H Çakmak, M Öztürk, E Özbay, B Imer
IEEE Transactions on Electron Devices 68 (3), 1006-1010, 2021
182021
Indium rich InGaN solar cells grown by MOCVD
H Çakmak, E Arslan, M Rudziński, P Demirel, HE Unalan, W Strupiński, ...
Journal of Materials Science: Materials in Electronics 25, 3652-3658, 2014
182014
Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate
E Arslan, MK Ozturk, H Cakmak, P Demirel, S Özçelik, E Ozbay
Journal of Materials Science: Materials in Electronics 24, 4471-4481, 2013
182013
Current transport mechanisms and trap state investigations in (Ni/Au)–AlN/GaN Schottky barrier diodes
E Arslan, S Bütün, Y Şafak, H Çakmak, H Yu, E Özbay
Microelectronics Reliability 51 (3), 576-580, 2011
162011
Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1−xN HEMT based on a grading AlxGa1−xN buffer layer
H Yu, SB Lisesivdin, B Bolukbas, O Kelekci, MK Ozturk, S Ozcelik, ...
physica status solidi (a) 207 (11), 2593-2596, 2010
162010
Multichromic vanadium pentoxide thin films through ultrasonic spray deposition
Y Tutel, MB Durukan, S Koc, S Koylan, H Cakmak, Y Kocak, F Hekmat, ...
Journal of The Electrochemical Society 168 (10), 106511, 2021
152021
Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range
E Arslan, H Çakmak, E Özbay
Microelectronic engineering 100, 51-56, 2012
142012
Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure
H Yu, M Ozturk, P Demirel, H Cakmak, B Bolukbas, D Caliskan, E Ozbay
Semiconductor science and technology 26 (8), 085010, 2011
142011
MOCVD growth and optical properties of non-polar (1 1–2 0) a-plane GaN on (1 0–1 2) r-plane sapphire substrate
H Yu, M Ozturk, P Demirel, H Cakmak, E Ozbay
Journal of Crystal Growth 312 (23), 3438-3442, 2010
142010
Mosaic structure characterization of the AlInN layer grown on sapphire substrate
E Arslan, P Demirel, H Çakmak, MK Öztürk, E Ozbay
Advances in Materials Science and Engineering 2014 (1), 980639, 2014
112014
Magnetotransport study on AlInN/(GaN)/AlN/GaN heterostructures
A Bayraklı, E Arslan, T Fırat, Ş Özcan, Ö Kazar, H Çakmak, E Özbay
physica status solidi (a) 209 (6), 1119-1123, 2012
82012
Experimental study of two-step growth of thin AlN film on 4H-SiC substrate by Metalorganic Chemical Vapor Deposition
H Yu, M Ozturk, P Demirel, H Cakmak, T Buyuklimanli, W Ou, E Ozbay
Journal of optoelectronics and advanced materials 12 (12), 2406, 2010
72010
Energy relaxation of electrons in InGaN quantum wells
B Sarikavak-Lisesivdin, SB Lisesivdin, N Balkan, G Atmaca, P Narin, ...
Metallurgical and Materials Transactions A 46, 1565-1569, 2015
42015
ALD grown AZO contacts for AlGaN/GaN HEMT Device Applications
H Cakmak, D Tugrul, H Esen, D Yilmaz, E Özbay, M Imer
2020
Research Article Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate
E Arslan, P Demirel, H Çakmak, MK Öztürk, E Ozbay
Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer
H Yu, S LİŞESİVDİN, B Bölükbaş, Ö Kelekçi, M Öztürk, H Çakmak
Tavlama sıcaklığına bağlı olarak InGaN/GaN yapılı güneş pillerinin mikro yapısal özelliklerinin incelenmesi
G KURTULUŞ, K KIZILKAYA, E PİŞKİN, H EFKERE, H ÇAKMAK, ...
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