Takip et
Christopher Hains
Christopher Hains
Physicist
Doğrulanmış e-posta adresi yok
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD
P Zhou, J Cheng, CF Schaus, SZ Sun, K Zheng, E Armour, C Hains, ...
IEEE Photonics technology letters 3 (7), 591-593, 1991
1331991
Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
X Huang, A Stintz, CP Hains, GT Liu, J Cheng, KJ Malloy
IEEE Photonics Technology Letters 12 (3), 227-229, 2000
1202000
Monolithic integration of In0. 2Ga0. 8As vertical-cavity surface-emitting lasers with resonance-enhanced quantum well photodetectors
GG Ortiz, CP Hains, J Cheng, HQ Hou, JC Zolper
Electronics Letters 32 (13), 1205-1207, 1996
1071996
Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
X Huang, A Stintz, CP Hains, GT Liu, J Cheng, KJ Malloy
Electronics Letters 36 (1), 1, 2000
992000
Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces
PE Hopkins, JC Duda, SP Clark, CP Hains, TJ Rotter, LM Phinney, ...
Applied Physics Letters 98 (16), 2011
942011
Effect of strain-compensation in stacked 1.3 μm InAs∕ GaAs quantum dot active regions grown by metalorganic chemical vapor deposition
N Nuntawong, S Birudavolu, CP Hains, S Huang, H Xu, DL Huffaker
Applied Physics Letters 85 (15), 3050-3052, 2004
882004
Selective area growth of InAs quantum dots formed on a patterned GaAs substrate
S Birudavolu, N Nuntawong, G Balakrishnan, YC Xin, S Huang, SC Lee, ...
Applied physics letters 85 (12), 2337-2339, 2004
652004
Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition
N Nuntawong, YC Xin, S Birudavolu, PS Wong, S Huang, CP Hains, ...
Applied Physics Letters 86 (19), 2005
622005
Semiconductor Lasers and Amplifiers-Very Low Threshold Current Density Room Temperature Continuous-Wave Lasing from a Single-Layer InAs Quantum-Dot Laser
X Huang, A Stintz, CP Hains, GT Liu, J Cheng, KJ Malloy
IEEE Photonics Technology Letters 12 (3), 227-229, 2000
432000
Cascadable, latching photonic switch with high optical gain by the monolithic integration of a vertical-cavity surface-emitting laser and a pn-pn photothyristor
P Zhou, J Cheng, CF Schaus, SZ Sun, C Hains, K Zheng, E Armour, ...
IEEE photonics technology letters 3 (11), 1009-1012, 1991
431991
Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate
A Khoshakhlagh, F Jaeckel, C Hains, JB Rodriguez, LR Dawson, ...
Applied Physics Letters 97 (5), 2010
412010
Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes
NY Li, CP Hains, K Yang, J Lu, J Cheng, PW Li
Applied physics letters 75 (8), 1051-1053, 1999
381999
Multi-watt 1.25 µm quantum dot VECSEL
AR Albrecht, TJ Rotter, CP Hains, A Stintz, JV Moloney, KJ Malloy, ...
Electronics letters 46 (12), 856-857, 2010
342010
Ground-state lasing of stacked InAs∕ GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition
J Tatebayashi, N Nuntawong, YC Xin, PS Wong, SH Huang, CP Hains, ...
Applied Physics Letters 88 (22), 2006
302006
Quasi-planar monolithic integration of high-speed VCSEL and resonant enhanced photodetector arrays
AC Alduino, SQ Luong, Y Zhou, CP Hains, J Cheng
IEEE Photonics Technology Letters 11 (5), 512-514, 1999
291999
Record pulsed power demonstration of a GaSb-based optically pumped semiconductor laser grown lattice-mismatched on an AlAs/GaAs Bragg mirror and …
JM Yarborough, YY Lai, Y Kaneda, J Hader, JV Moloney, TJ Rotter, ...
Applied Physics Letters 95 (8), 081112, 2009
282009
Monolithic wavelength-graded VCSEL and resonance-enhanced photodetector arrays for parallel optical interconnects
SQ Luong, GG Ortiz, Y Zhou, J Lu, CP Hains, J Cheng, HQ Hou, ...
IEEE Photonics Technology Letters 10 (5), 642-644, 1998
271998
340-W Peak Power From a GaSb 2-m Optically Pumped Semiconductor Laser (OPSL) Grown Mismatched on GaAs
YY Lai, JM Yarborough, Y Kaneda, J Hader, JV Moloney, TJ Rotter, ...
IEEE Photonics Technology Letters 22 (16), 1253-1255, 2010
252010
Cryogenic VCSELs with chirped multiple quantum wells for a very wide temperature range of CW operation
GG Ortiz, CP Hains, B Lu, SZ Sun, J Cheng, JC Zolper
IEEE Photonics Technology Letters 8 (11), 1423-1425, 1996
241996
High-performance latchable optical switch and logic gates based on the integration of surface-emitting lasers and photothyristors
P Zhou, J Cheng, CF Schaus, SZ Sun, C Hains, K Zheng, A Torres, ...
Applied Physics Letters;(United States) 59 (20), 1991
221991
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