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Gökhan Atmaca
Gökhan Atmaca
Research Professor, Hongik Uni, and Science Editor, Kuark Science
Verified email at kuark.org - Homepage
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Cited by
Cited by
Year
High Figure-of-Merit ( / ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
JH Lee, JM Ju, G Atmaca, JG Kim, SH Kang, YS Lee, SH Lee, JW Lim, ...
IEEE Journal of the Electron Devices Society 6, 1179-1186, 2018
392018
Structural and optical properties of hexagonal ZnO nanostructures grown by ultrasonic spray CVD
P Narin, E Kutlu, G Atmaca, A Atilgan, A Yildiz, SB Lisesivdin
Optik 168, 86-91, 2018
192018
The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
S Ardali, G Atmaca, SB Lisesivdin, T Malin, V Mansurov, K Zhuravlev, ...
physica status solidi (b) 252 (9), 1960-1965, 2015
152015
Ab initio study of electronic properties of armchair graphene nanoribbons passivated with heavy metal elements
P Narin, JMA Abbas, G Atmaca, E Kutlu, SB Lisesivdin, E Ozbay
Solid State Communications 296, 8-11, 2019
122019
A comparative study of AlGaN and InGaN back-barriers in ultrathin-barrier AlN/GaN heterostructures
JM All Abbas, G Atmaca, P Narin, E Kutlu, B Sarikavak-Lisesivdin, ...
Journal of Electronic Materials 46, 5278-5286, 2017
112017
Effect of substitutional As impurity on electrical and optical properties of β-Si3N4 structure
E Kutlu, P Narin, G Atmaca, B Sarikavak-Lisesivdin, SB Lisesivdin
Materials Research Bulletin 83, 128-134, 2016
102016
Current collapse-free and self-heating performances in normally off GaN nanowire GAA-MOSFETs
KS Im, G Atmaca, CH Won, R Caulmilone, S Cristoloveanu, YT Kim, ...
IEEE Journal of the Electron Devices Society 6, 354-359, 2018
92018
Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure
SB Lisesivdin, G Atmaca, E Arslan, S Çakmakyapan, Ö Kazar, S Bütün, ...
Physica E: Low-dimensional Systems and Nanostructures 63, 87-92, 2014
92014
Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses
P Tasli, B Sarikavak, G Atmaca, K Elibol, AF Kuloglu, SB Lisesivdin
Physica B: Condensed Matter 405 (18), 4020-4026, 2010
92010
Negative differential resistance observation and a new fitting model for electron drift velocity in GaN-based heterostructures
G Atmaca, P Narin, E Kutlu, TV Malin, VG Mansurov, KS Zhuravlev, ...
IEEE Transactions on Electron Devices 65 (3), 950-956, 2018
82018
Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer
G Atmaca, P Narin, B Sarikavak-Lisesivdin, SB Lisesivdin
Physica E: Low-dimensional Systems and Nanostructures 79, 67-71, 2016
82016
A numerical study on subband structure of InxAl1− xN/GaN-based HEMT structures with low-indium (x< 0.10) barrier layer
K Elibol, G Atmaca, P Tasli, SB Lisesivdin
Solid state communications 162, 8-12, 2013
82013
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
G Atmaca, S Ardali, E Tiras, T Malin, VG Mansurov, KS Zhuravlev, ...
Solid-State Electronics 118, 12-17, 2016
62016
Normally-off β-Ga2O3 MOSFET with an Epitaxial Drift Layer
CH Jang, G Atmaca, HY Cha
Micromachines 13 (8), 1185, 2022
52022
Numerical investigation of the 2DEG properties of AlGaN/AlN/GaN HEMT structures with InGaN/GaN MQW back-barrier structure
G Atmaca, P Tasli, G Karakoc, E Yazbahar, SB Lisesivdin
Physica E: Low-dimensional Systems and Nanostructures 65, 110-113, 2015
52015
β‐(Al0.17Ga0.83)2O3/Ga2O3 Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive …
G Atmaca, HY Cha
physica status solidi (a) 219 (12), 2100732, 2022
42022
A first principles investigation of the effect of aluminum, gallium and indium impurities on optical properties of β-Si3N4 structure
P Narin, E Kutlu, G Atmaca, SB Lişesivdin, E Özbay
Optik 147, 115-122, 2017
42017
Energy relaxation of electrons in InGaN quantum wells
B Sarikavak-Lisesivdin, SB Lisesivdin, N Balkan, G Atmaca, P Narin, ...
Metallurgical and Materials Transactions A 46, 1565-1569, 2015
42015
Delta‐Doped β‐(Al0.17Ga0.83)2O3/Ga2O3 Double‐Channel Heterostructure MODFETs
G Atmaca, HY Cha
physica status solidi (a) 219 (20), 2100842, 2022
32022
The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al0. 3Ga0. 7N/AlN/GaN heterostructures
F Sonmez, S Ardali, G Atmaca, SB Lisesivdin, T Malin, V Mansurov, ...
Materials Science in Semiconductor Processing 122, 105449, 2021
32021
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