| Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with and silicon oxynitride S Arulkumaran, T Egawa, H Ishikawa, T Jimbo, Y Sano Applied Physics Letters 84 (4), 613-615, 2004 | 285 | 2004 |
| Investigations of and insulator–semiconductor interfaces with low interface state density S Arulkumaran, T Egawa, H Ishikawa, T Jimbo, M Umeno Applied Physics Letters 73 (6), 809-811, 1998 | 247 | 1998 |
| Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕ GaN high-electron-mobility transistors on 4in. diameter silicon S Arulkumaran, T Egawa, S Matsui, H Ishikawa Applied Physics Letters 86 (12), 2005 | 140 | 2005 |
| Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung Applied Physics Letters 98 (11), 2011 | 139 | 2011 |
| Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 … ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ... Applied Physics Letters 95 (22), 2009 | 136 | 2009 |
| Characterization of different-Al-content heterostructures and high-electron-mobility transistors on sapphire S Arulkumaran, T Egawa, H Ishikawa, T Jimbo Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 135 | 2003 |
| High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates S Arulkumaran, T Egawa, H Ishikawa, T Jimbo Applied physics letters 80 (12), 2186-2188, 2002 | 134 | 2002 |
| AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111) S Tripathy, VKX Lin, SB Dolmanan, JPY Tan, RS Kajen, LK Bera, SL Teo, ... Applied Physics Letters 101 (8), 2012 | 123 | 2012 |
| Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors S Arulkumaran, T Egawa, H Ishikawa, T Jimbo Applied physics letters 82 (18), 3110-3112, 2003 | 109 | 2003 |
| Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou Applied Physics Letters 98 (16), 2011 | 99 | 2011 |
| Effects of annealing on Ti, Pd, and Ni/n-Al/sub 0.11/Ga/sub 0.89/N Schottky diodes S Arulkumaran, T Egawa, H Ishikawa, M Umeno, T Jimbo IEEE Transactions on Electron Devices 48 (3), 573-580, 2001 | 94 | 2001 |
| Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ... Applied Physics Letters 103 (14), 2013 | 88 | 2013 |
| Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates S Arulkumaran, M Sakai, T Egawa, H Ishikawa, T Jimbo, T Shibata, K Asai, ... Applied physics letters 81 (6), 1131-1133, 2002 | 87 | 2002 |
| High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ... IEEE electron device letters 31 (2), 96-98, 2009 | 84 | 2009 |
| Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ... Japanese Journal of Applied Physics 51 (11R), 111001, 2012 | 83 | 2012 |
| Studies on the influences of i-GaN, n-GaN, p-GaN and InGaN cap layers in AlGaN/GaN high-electron-mobility transistors S Arulkumaran, T Egawa, H Ishikawa Japanese journal of applied physics 44 (5R), 2953, 2005 | 80 | 2005 |
| Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from− 50 to 200 C ZH Liu, S Arulkumaran, GI Ng Applied physics letters 94 (14), 2009 | 79 | 2009 |
| Improved Linearity for Low-Noise Applications in 0.25-GaN MISHEMTs Using ALDas Gate Dielectric ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ... IEEE Electron Device Letters 31 (8), 803-805, 2010 | 75 | 2010 |
| Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa Applied physics express 4 (8), 084101, 2011 | 74 | 2011 |
| Studies on electron beam evaporated ZrO2/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors K Balachander, S Arulkumaran, H Ishikawa, K Baskar, T Egawa physica status solidi (a) 202 (2), R16-R18, 2005 | 72 | 2005 |
Geok Ing NgNanyang Technological UniversityVerified email at ntu.edu.sg
