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Andrew Carter
Andrew Carter
Northrop Grumann Space Systems
Verified email at ngc.com
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Cited by
Cited by
Year
Al2O3 growth on (100) In0. 53Ga0. 47As initiated by cyclic trimethylaluminum and hydrogen plasma exposures
AD Carter, WJ Mitchell, BJ Thibeault, JJM Law, MJW Rodwell
Applied physics express 4 (9), 091102, 2011
662011
Influence of gate metallization processes on the electrical characteristics of high-k/In0. 53Ga0. 47As interfaces
GJ Burek, Y Hwang, AD Carter, V Chobpattana, JJM Law, WJ Mitchell, ...
Journal of Vacuum Science & Technology B 29 (4), 2011
512011
GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas
K Shinohara, C King, AD Carter, EJ Regan, A Arias, J Bergman, ...
IEEE Electron Device Letters 39 (3), 417-420, 2018
422018
THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS
M Urteaga, A Carter, Z Griffith, R Pierson, J Bergman, A Arias, P Rowell, ...
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 35-41, 2016
332016
Record extrinsic transconductance (2.45 mS/µm at VDS= 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth
S Lee, CY Huang, AD Carter, DC Elias, JJM Law, V Chobpattana, ...
2013 Symposium on VLSI Technology, T246-T247, 2013
262013
GaN-based multi-channel transistors with lateral gate for linear and efficient millimeter-wave power amplifiers
K Shinohara, C King, EJ Regan, J Bergman, AD Carter, A Arias, ...
2019 IEEE MTT-S International Microwave Symposium (IMS), 1133-1135, 2019
172019
III-V MOSFETs: scaling laws, scaling limits, fabrication processes
MJW Rodwell, U Singisetti, M Wistey, GJ Burek, A Carter, A Baraskar, ...
Indium Phosphide & Related Materials (IPRM), 2010 International Conference …, 2010
172010
Co-doping of In x Ga 1− x As with silicon and tellurium for improved ultra-low contact resistance
JJM Law, AD Carter, S Lee, CY Huang, H Lu, MJW Rodwell, AC Gossard
Journal of Crystal Growth 378, 92-95, 2013
132013
High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching
S Lee, CY Huang, AD Carter, JJM Law, DC Elias, V Chobpattana, ...
2013 International Conference on Indium Phosphide and Related Materials …, 2013
132013
Reduction of leakage current in In0. 53Ga0. 47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0. 56Sb0. 44 confinement layers
CY Huang, S Lee, D Cohen-Elias, JJM Law, AD Carter, V Chobpattana, ...
Applied Physics Letters 103 (20), 2013
112013
Do SEII Electrons Really Degrade SEM Image Quality?
GH Bernstein, AD Carter, DC Joy
Scanning: The Journal of Scanning Microscopies 35 (1), 1-6, 2013
112013
Si/InP Heterogeneous Integration Techniques from the Wafer-Scale (Hybrid Wafer Bonding) to the Discrete Transistor (Micro-Transfer Printing)
AD Carter, ME Urteaga, ZM Griffith, KJ Lee, J Roderick, P Rowell, ...
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2018
102018
Wafer-scale InP/Si CMOS 3D Integration using low-temperature oxide bonding
A Carter, M Urteaga, P Rowell, S Hong, R Patti, C Petteway
Proc. IPRM, 2015
92015
Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy
D Cohen-Elias, JJM Law, HW Chiang, A Sivananthan, C Zhang, ...
71st Device Research Conference, 1-2, 2013
82013
A 30 GSample/s InP/CMOS sample-hold amplifier with active droop correction
SK Kim, S Daneshgar, AD Carter, MJ Choe, M Urteaga, MJW Rodwell
2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016
62016
A W-Band transmitter channel with 16dBm output power and a receiver channel with 58.6 mW DC power consumption using heterogeneously integrated InP HBT and Si CMOS technologies
ASH Ahmed, A Simsek, AA Farid, AD Carter, M Urteaga, MJW Rodwell
2019 IEEE MTT-S International Microwave Symposium (IMS), 654-657, 2019
52019
Q-band InP/CMOS receiver and transmitter beamformer channels fabricated by 3D heterogeneous integration
AD Carter, ME Urteaga, ZM Griffith, KJ Lee, J Roderick, P Rowell, ...
2017 IEEE MTT-S International Microwave Symposium (IMS), 1760-1763, 2017
52017
Substitutional-gate MOSFETs with composite (In0. 53Ga0. 47As/InAs/In0. 53Ga0. 47As) channels and self-aligned MBE source–drain regrowth
L Sanghoon, JJM Law, AD Carter, BJ Thibeault, W Mitchell, ...
IEEE Electron Device Lett 33 (11), 1553-1555, 2012
52012
Substitutional-gate MOSFETs with composite (In0. 53Ga0. 47As/InAs/In0. 53Ga0. 47As) channels and self-aligned MBE source–drain regrowth
S Lee, JJM Law, AD Carter, BJ Thibeault, W Mitchell, V Chobpattana, ...
IEEE Electron Device Letters 33 (11), 1553, 2012
52012
60 nm gate length Al2O3/ In0.53Ga0.47As gate-first MOSFETs using InAs raised source-drain regrowth
AD Carter, JJM Law, E Lobisser, GJ Burek, WJ Mitchell, BJ Thibeault, ...
69th Device Research Conference, 19-20, 2011
52011
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