Jaydeep P. Kulkarni
Jaydeep P. Kulkarni
Electrical and Computer Engineering, University of Texas at Austin
Verified email at austin.utexas.edu - Homepage
Title
Cited by
Cited by
Year
Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates
Q Cao, H Kim, N Pimparkar, JP Kulkarni, C Wang, M Shim, K Roy, ...
Nature 454 (7203), 495-500, 2008
11972008
A 160 mV robust Schmitt trigger based subthreshold SRAM
JP Kulkarni, K Kim, K Roy
IEEE Journal of Solid-State Circuits 42 (10), 2303-2313, 2007
4432007
Ultralow-voltage process-variation-tolerant Schmitt-trigger-based SRAM design
JP Kulkarni, K Roy
IEEE transactions on very large scale integration (VLSI) systems 20 (2), 319-332, 2011
1452011
Variation-tolerant ultra low-power heterojunction tunnel FET SRAM design
V Saripalli, S Datta, V Narayanan, JP Kulkarni
2011 IEEE/ACM International Symposium on Nanoscale Architectures, 45-52, 2011
1012011
A 160 mV, fully differential, robust schmitt trigger based sub-threshold SRAM
JP Kulkarni, K Kim, K Roy
Proceedings of the 2007 international symposium on Low power electronics and …, 2007
892007
A 0.45–1 V fully-integrated distributed switched capacitor DC-DC converter with high density MIM capacitor in 22 nm tri-gate CMOS
R Jain, BM Geuskens, ST Kim, MM Khellah, J Kulkarni, JW Tschanz, V De
IEEE Journal of Solid-State Circuits 49 (4), 917-927, 2014
872014
Process variation tolerant SRAM array for ultra low voltage applications
JP Kulkarni, K Kim, SP Park, K Roy
Proceedings of the 45th annual Design Automation Conference, 108-113, 2008
752008
PVT-and-aging adaptive wordline boosting for 8T SRAM power reduction
A Raychowdhury, B Geuskens, J Kulkarni, J Tschanz, K Bowman, ...
2010 IEEE International Solid-State Circuits Conference-(ISSCC), 352-353, 2010
722010
Postsilicon voltage guard-band reduction in a 22 nm graphics execution core using adaptive voltage scaling and dynamic power gating
M Cho, ST Kim, C Tokunaga, C Augustine, JP Kulkarni, K Ravichandran, ...
IEEE Journal of Solid-State Circuits 52 (1), 50-63, 2016
452016
Enabling wide autonomous DVFS in a 22 nm graphics execution core using a digitally controlled fully integrated voltage regulator
ST Kim, YC Shih, K Mazumdar, R Jain, JF Ryan, C Tokunaga, ...
IEEE Journal of Solid-State Circuits 51 (1), 18-30, 2015
392015
Capacitive-coupling wordline boosting with self-induced VCCcollapse for write VMINreduction in 22-nm 8T SRAM
J Kulkarni, B Geuskens, T Karnik, M Khellah, J Tschanz, V De
2012 IEEE International Solid-State Circuits Conference, 234-236, 2012
372012
Methods and systems to selectively boost an operating voltage of, and controls to an 8T bit-cell array and/or other logic blocks
JP Kulkarni, BM Geuskens, J Tschanz, VK De, MM Khellah
US Patent 9,299,395, 2016
352016
A 0.45–1V fully integrated reconfigurable switched capacitor step-down DC-DC converter with high density MIM capacitor in 22nm tri-gate CMOS
R Jain, B Geuskens, M Khellah, S Kim, J Kulkarni, J Tschanz, V De
2013 Symposium on VLSI Circuits, C174-C175, 2013
312013
Improving multi-core performance using mixed-cell cache architecture
SM Khan, AR Alameldeen, C Wilkerson, J Kulkarni, DA Jimenez
2013 IEEE 19th International Symposium on High Performance Computer …, 2013
312013
5.7 A graphics execution core in 22nm CMOS featuring adaptive clocking, selective boosting and state-retentive sleep
C Tokunaga, JF Ryan, C Augustine, JP Kulkarni, YC Shih, ST Kim, R Jain, ...
2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014
302014
A read-disturb-free, differential sensing 1R/1W port, 8T bitcell array
JP Kulkarni, A Goel, P Ndai, K Roy
IEEE transactions on very large scale integration (VLSI) systems 19 (9 …, 2010
292010
Process-tolerant ultralow voltage digital subthreshold design
K Roy, JP Kulkarni, ME Hwang
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF …, 2008
292008
Dual-VCC 8T-bitcell SRAM array in 22nm tri-gate CMOS for energy-efficient operation across wide dynamic voltage range
J Kulkarni, M Khellah, J Tschanz, B Geuskens, R Jain, S Kim, V De
2013 Symposium on VLSI Technology, C126-C127, 2013
272013
5.6 Mb/mm 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 …
JP Kulkarni, J Keane, KH Koo, S Nalam, Z Guo, E Karl, K Zhang
IEEE Journal of Solid-State Circuits 52 (1), 229-239, 2016
252016
Tri-mode independent gate finfet-based sram with pass-gate feedback: technology–circuit co-design for enhanced cell stability
SK Gupta, JP Kulkarni, K Roy
IEEE Transactions on Electron Devices 60 (11), 3696-3704, 2013
242013
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