Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges. R Waser, R Dittmann, G Staikov, K Szot Advanced Materials (Deerfield Beach, Fla.) 21 (25-26), 2632-2663, 2009 | 5485 | 2009 |
Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices R Muenstermann, T Menke, R Dittmann, R Waser Adv. Mater 22 (43), 4819-4822, 2010 | 412 | 2010 |
Origin of the ultra‐nonlinear switching kinetics in oxide‐based resistive switches S Menzel, M Waters, A Marchewka, U Böttger, R Dittmann, R Waser Advanced Functional Materials 21 (23), 4487-4492, 2011 | 388 | 2011 |
In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure GS Park, YB Kim, SY Park, XS Li, S Heo, MJ Lee, M Chang, JH Kwon, ... Nature communications 4 (1), 2382, 2013 | 386 | 2013 |
2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022 | 340 | 2022 |
Towards oxide electronics: a roadmap M Coll, J Fontcuberta, M Althammer, M Bibes, H Boschker, A Calleja, ... Applied surface science 482, 1-93, 2019 | 289 | 2019 |
Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4 Thin Films K Shibuya, R Dittmann, S Mi, R Waser Advanced materials 3 (22), 411-414, 2010 | 262 | 2010 |
Nanoscale resistive switching in SrTiO3 thin films K Szot, R Dittmann, W Speier, R Waser physica status solidi (RRL)–Rapid Research Letters 1 (2), R86-R88, 2007 | 209 | 2007 |
Anomalous resistance hysteresis in oxide ReRAM: Oxygen evolution and reincorporation revealed by in situ TEM D Cooper, C Baeumer, N Bernier, A Marchewka, C La Torre, ... Advanced materials 29 (23), 1700212, 2017 | 198 | 2017 |
Identification of - and -Site Cation Vacancy Defects in Perovskite Oxide Thin Films DJ Keeble, S Wicklein, R Dittmann, L Ravelli, RA Mackie, W Egger Physical review letters 105 (22), 226102, 2010 | 192 | 2010 |
Resistive switching and data reliability of epitaxial (Ba, Sr) TiO3 thin films R Oligschlaeger, R Waser, R Meyer, S Karthäuser, R Dittmann Applied Physics Letters 88 (4), 2006 | 183 | 2006 |
Do dislocations act as atomic autobahns for oxygen in the perovskite oxide SrTiO 3? V Metlenko, AHH Ramadan, F Gunkel, H Du, H Schraknepper, ... Nanoscale 6 (21), 12864-12876, 2014 | 148 | 2014 |
Improved endurance behavior of resistive switching in (Ba, Sr) TiO3 thin films with W top electrode W Shen, R Dittmann, U Breuer, R Waser Applied physics letters 93 (22), 2008 | 146 | 2008 |
Spectromicroscopic insights for rational design of redox-based memristive devices C Baeumer, C Schmitz, AHH Ramadan, H Du, K Skaja, V Feyer, P Müller, ... Nature communications 6 (1), 8610, 2015 | 137 | 2015 |
Pulsed laser ablation of complex oxides: The role of congruent ablation and preferential scattering for the film stoichiometry S Wicklein, A Sambri, S Amoruso, X Wang, R Bruzzese, A Koehl, ... Applied physics letters 101 (13), 2012 | 134 | 2012 |
Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3 T Menke, P Meuffels, R Dittmann, K Szot, R Waser Journal of applied physics 105 (6), 2009 | 126 | 2009 |
Staikov and Szot Kristof 2009 R Waser, R Dittmann Adv. Mater 21, 2632, 0 | 122 | |
Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis C Baeumer, J Li, Q Lu, AYL Liang, L Jin, HP Martins, T Duchoň, M Glöß, ... Nature materials 20 (5), 674-682, 2021 | 121 | 2021 |
Subfilamentary networks cause cycle-to-cycle variability in memristive devices C Baeumer, R Valenta, C Schmitz, A Locatelli, TO Mentes, SP Rogers, ... ACS nano 11 (7), 6921-6929, 2017 | 117 | 2017 |
Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy M Moors, KK Adepalli, Q Lu, A Wedig, C Bäumer, K Skaja, B Arndt, ... Acs nano 10 (1), 1481-1492, 2016 | 115 | 2016 |