| Impact ionization coefficients in 4H-SiC WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ... IEEE Transactions on electron devices 55 (8), 1984-1990, 2008 | 106 | 2008 |
| Time-dependent dielectric breakdown of 4H-SiC MOS capacitors and DMOSFETs K Matocha, G Dunne, S Soloviev, R Beaupre IEEE transactions on electron devices 55 (8), 1830-1834, 2008 | 95 | 2008 |
| Deep UV photon-counting detectors and applications GA Shaw, AM Siegel, J Model, A Geboff, S Soloviev, A Vert, P Sandvik Advanced Photon Counting Techniques III 7320, 88-102, 2009 | 85 | 2009 |
| Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations RA Berechman, M Skowronski, S Soloviev, P Sandvik Journal of Applied Physics 107 (11), 2010 | 61 | 2010 |
| Solar-blind 4H-SiC single-photon avalanche diode operating in Geiger mode A Vert, S Soloviev, J Fronheiser, P Sandvik IEEE Photonics Technology Letters 20 (18), 1587-1589, 2008 | 60 | 2008 |
| Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection HY Cha, S Soloviev, S Zelakiewicz, P Waldrab, PM Sandvik IEEE Sensors Journal 8 (3), 233-237, 2008 | 49 | 2008 |
| Investigation of boron diffusion in 6H-SiC Y Gao, SI Soloviev, TS Sudarshan Applied physics letters 83 (5), 905-907, 2003 | 47 | 2003 |
| Selective doping of 4H–SiC by codiffusion of aluminum and boron Y Gao, SI Soloviev, TS Sudarshan, CC Tin Journal of Applied Physics 90 (11), 5647-5651, 2001 | 40 | 2001 |
| Doping of 6H–SiC by selective diffusion of boron SI Soloviev, Y Gao, TS Sudarshan Applied Physics Letters 77 (24), 4004-4006, 2000 | 37 | 2000 |
| Observation of dislocations in diffused 4H–SiC pin diodes by electron-beam induced current S Maximenko, S Soloviev, D Cherednichenko, T Sudarshan Journal of applied physics 97 (1), 2005 | 33 | 2005 |
| Electron-beam-induced current observed for dislocations in diffused diodes S Maximenko, S Soloviev, D Cherednichenko, T Sudarshan Applied physics letters 84 (9), 1576-1578, 2004 | 32 | 2004 |
| SiC avalanche photodiodes and photomultipliers for ultraviolet and solar‐blind light detection A Vert, S Soloviev, P Sandvik physica status solidi (a) 206 (10), 2468-2477, 2009 | 30 | 2009 |
| Method for doping impurities GT Dunne, JB Tucker, SI Soloviev, ZM Stum US Patent 7,807,556, 2010 | 23 | 2010 |
| Structural and electrical characterization of porous silicon carbide formed in n-6H-SiC substrates S Soloviev, T Das, TS Sudarshan Electrochemical and solid-state letters 6 (2), G22, 2002 | 23 | 2002 |
| The effect of doping concentration and conductivity type on preferential etching of 4H-SiC by molten KOH Y Gao, Z Zhang, R Bondokov, S Soloviev, T Sudarshan MRS Online Proceedings Library 815 (1), 6-10, 2004 | 22 | 2004 |
| Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement JE Green, WS Loh, ARJ Marshall, BK Ng, RC Tozer, JPR David, ... IEEE transactions on electron devices 59 (4), 1030-1036, 2012 | 21 | 2012 |
| Boron diffusion into 6H-SiC through graphite mask S Soloviev, Y Gao, X Wang, T Sudarshan Journal of electronic materials 30, 224-227, 2001 | 19 | 2001 |
| Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC DC Look, ZQ Fang, S Soloviev, TS Sudarshan, JJ Boeckl Physical Review B 69 (19), 195205, 2004 | 18 | 2004 |
| Silicon carbide photomultipliers and avalanche photodiode arrays for ultraviolet and solar-blind light detection A Vert, S Soloviev, A Bolotnikov, P Sandvik SENSORS, 2009 IEEE, 1893-1896, 2009 | 17 | 2009 |
| Forward voltage drop degradation in diffused SiC p-i-n diodes S Soloviev, D Cherednichenko, Y Gao, A Grekov, Y Ma, TS Sudarshan Journal of applied physics 95 (8), 4376-4380, 2004 | 16 | 2004 |
