Xinbo Zou
Xinbo Zou
Verified email at shanghaitech.edu.cn - Homepage
Title
Cited by
Cited by
Year
Fully-vertical GaN-based pin Diodes Using GaN-on-Si Epilayers
X Zou, X Zhang, X Lu, CW Tang, KM Lau
IEEE Electron Device Letters, 2016
782016
Active matrix monolithic LED micro-display using GaN-on-Si epilayers
X Zhang, P Li, X Zou, J Jiang, SH Yuen, CW Tang, KM Lau
IEEE Photonics Technology Letters 31 (11), 865-868, 2019
402019
Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers
J Ma, X Zhu, KM Wong, X Zou, KM Lau
Journal of crystal growth 370, 265-268, 2013
382013
Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper
KM Lau, KM Wong, X Zou, P Chen
Optics express 19 (104), A956-A961, 2011
342011
Fully-and quasi-vertical GaN-on-Si pin diodes: High performance and comprehensive comparison
X Zhang, X Zou, X Lu, CW Tang, KM Lau
IEEE Transactions on Electron Devices 64 (3), 809-815, 2017
322017
InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
D Deng, N Yu, Y Wang, X Zou, HC Kuo, P Chen, KM Lau
Applied physics letters 96 (20), 201106, 2010
302010
Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters
Y Cai, X Zou, C Liu, KM Lau
IEEE Electron Device Letters 39 (2), 224-227, 2018
272018
Transfer of GaN-based light-emitting diodes from silicon growth substrate to copper
KM Wong, X Zou, P Chen, KM Lau
IEEE electron device letters 31 (2), 132-134, 2009
242009
Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode
C Liu, Y Cai, X Zou, KM Lau
IEEE Photonics Technology Letters, 2016
222016
Breakdown Ruggedness of Quasi-vertical GaN-based pin Diodes on Si Substrates
X Zou, X Zhang, X Lu, CW Tang, KM Lau
Electron Device Letters, 2016
222016
High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates
X Zou, KM Wong, X Zhu, WC Chong, J Ma, KM Lau
IEEE Electron Device Letters 34 (7), 903-905, 2013
222013
Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing
X Lu, H Jiang, C Liu, X Zou, KM Lau
Semiconductor Science and Technology 31 (5), 055019, 2016
212016
Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure
X Lu, C Liu, H Jiang, X Zou, A Zhang, KM Lau
Applied Physics Letters 109 (5), 053504, 2016
162016
Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding
X Zou, X Zhang, WC Chong, CW Tang, KM Lau
IEEE Transactions on Electron Devices, 2016
162016
Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate
X Lu, C Liu, H Jiang, X Zou, A Zhang, KM Lau
Applied Physics Express 9 (3), 031001, 2016
162016
Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance
X Lu, X Zhang, H Jiang, X Zou, KM Lau, G Wang
physica status solidi (a), 2020
122020
Switching performance of quasi‐vertical GaN‐based p‐i‐n diodes on Si
X Zhang, X Zou, CW Tang, KM Lau
physica status solidi (a) 214 (8), 1600817, 2017
122017
High performance monolithically integrated GaN driving VMOSFET on LED
X Lu, C Liu, H Jiang, X Zou, KM Lau
IEEE Electron Device Letters 38 (6), 752-755, 2017
102017
InAlGaAs/InAlAs MQWs on Si Substrate
B Shi, Q Li, Y Wan, KW Ng, X Zou, CW Tang, KM Lau
IEEE Photonics Technology Letters 27 (7), 748-751, 2015
102015
Light extraction enhancement from GaN‐based thin‐film LEDs grown on silicon after substrate removal using HNA solution
XB Zou, H Liang, KM Lau
physica status solidi c 7 (7‐8), 2171-2173, 2010
82010
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Articles 1–20