Chao Liu
Title
Cited by
Cited by
Year
Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire
X Wang, Y Zhang, X Chen, M He, C Liu, Y Yin, X Zou, S Li
Nanoscale 6 (20), 12009-12017, 2014
952014
Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer
T Lu, S Li, C Liu, K Zhang, Y Xu, J Tong, L Wu, H Wang, X Yang, Y Yin, ...
Applied Physics Letters 100 (14), 141106, 2012
902012
Monolithic integration of AlGaN/GaN HEMT on LED by MOCVD
ZJ Liu, T Huang, J Ma, C Liu, KM Lau
IEEE Electron Device Letters 35 (3), 330-332, 2014
652014
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
H Jiang, C Liu, Y Chen, X Lu, CW Tang, KM Lau
IEEE Transactions on Electron Devices 64 (3), 832-839, 2017
532017
GaN-on-Si quasi-vertical power MOSFETs
C Liu, RA Khadar, E Matioli
IEEE Electron Device Letters 39 (1), 71-74, 2017
522017
The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer
L Tai-Ping, L Shu-Ti, Z Kang, L Chao, X Guo-Wei, Z Yu-Gang, Z Shu-Wen, ...
Chinese Physics B 20 (9), 098503, 2011
502011
820-V GaN-on-Si quasi-vertical pin diodes with BFOM of 2.0 GW/cm2
RA Khadar, C Liu, L Zhang, P Xiang, K Cheng, E Matioli
IEEE Electron Device Letters 39 (3), 401-404, 2018
472018
Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors
Z Liu, J Ma, T Huang, C Liu, K May Lau
Applied Physics Letters 104 (9), 091103, 2014
372014
Blue InGaN light-emitting diodes with dip-shaped quantum wells
L Tai-Ping, L Shu-Ti, Z Kang, L Chao, X Guo-Wei, Z Yu-Gang, Z Shu-Wen, ...
Chinese Physics B 20 (10), 108504, 2011
372011
Fully vertical GaN-on-Si power MOSFETs
RA Khadar, C Liu, R Soleimanzadeh, E Matioli
IEEE Electron Device Letters 40 (3), 443-446, 2019
362019
Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers
L Wu, S Li, C Liu, H Wang, T Lu, K Zhang, G Xiao, Y Zhou, S Zheng, Y Yin, ...
Chinese Physics B 21 (6), 068506, 2012
352012
Vertical GaN-on-Si MOSFETs with monolithically integrated freewheeling Schottky barrier diodes
C Liu, RA Khadar, E Matioli
IEEE Electron Device Letters 39 (7), 1034-1037, 2018
342018
Enhanced performance of blue light-emitting diodes with InGaN/GaN superlattice as hole gathering layer
C Liu, T Lu, L Wu, H Wang, Y Yin, G Xiao, Y Zhou, S Li
IEEE Photonics Technology Letters 24 (14), 1239-1241, 2012
312012
Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters
Y Cai, X Zou, C Liu, KM Lau
IEEE Electron Device Letters 39 (2), 224-227, 2017
272017
Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors
C Liu, Y Cai, Z Liu, J Ma, KM Lau
Applied Physics Letters 106 (18), 181110, 2015
272015
Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties
X Wang, J Tong, X Chen, B Zhao, Z Ren, D Li, X Zhuo, J Zhang, H Yi, ...
Chemical Communications 50 (6), 682-684, 2014
272014
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy
C Liu, Y Cai, H Jiang, KM Lau
Optics letters 43 (14), 3401-3404, 2018
262018
Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition
X Lu, J Ma, H Jiang, C Liu, KM Lau
Applied Physics Letters 105 (10), 102911, 2014
242014
Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers
T Jin-Hui, L Shu-Ti, L Tai-Ping, L Chao, W Hai-Long, W Le-Juan, Z Bi-Jun, ...
Chinese Physics B 21 (11), 118502, 2012
242012
Low-leakage high-breakdown laterally integrated HEMT-LED via n-GaN electrode
C Liu, Y Cai, X Zou, KM Lau
IEEE Photonics Technology Letters 28 (10), 1130-1133, 2016
222016
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Articles 1–20