| Material dependence of hydrogen diffusion: Implications for NBTI degradation AT Krishnan, C Chancellor, S Chakravarthi, PE Nicollian, V Reddy, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005 | 213 | 2005 |
| Experimental evidence for voltage driven breakdown models in ultrathin gate oxides PE Nicollian, WR Hunter, JC Hu 2000 IEEE International Reliability Physics Symposium Proceedings. 38th …, 2000 | 156 | 2000 |
| Negative bias temperature instability mechanism: The role of molecular hydrogen AT Krishnan, S Chakravarthi, P Nicollian, V Reddy, S Krishnan Applied Physics Letters 88 (15), 2006 | 110 | 2006 |
| Low voltage stress-induced-leakage-current in ultrathin gate oxides PE Nicollian, M Rodder, DT Grider, P Chen, RM Wallace, SV Hattangady 1999 IEEE international reliability physics symposium proceedings. 37th …, 1999 | 79 | 1999 |
| Ultrathin nitrogen-profile engineered gate dielectric films SV Hattangady, R Kraft, DT Grider, MA Douglas, GA Brown, PA Tiner, ... International Electron Devices Meeting. Technical Digest, 495-498, 1996 | 68 | 1996 |
| Trends for deep submicron VLSI and their implications for reliability PK Chatterjee, WR Hunter, A Amerasekera, S Aur, C Duvvury, ... Proceedings of 1995 IEEE International Reliability Physics Symposium, 1-11, 1995 | 62 | 1995 |
| A 1.2 V, 0.1/spl mu/m gate length CMOS technology: design and process issues M Rodder, S Hattangady, N Yu, W Shiau, P Nicollian, T Laaksonen, ... International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 50 | 1998 |
| Analytic extension of the cell-based oxide breakdown model to full percolation and its implications AT Krishnan, PE Nicollian 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 40 | 2007 |
| The traps that cause breakdown in deeply scaled SiON dielectrics PE Nicollian, AT Krishnan, CA Chancellor, RB Khamankar 2006 International Electron Devices Meeting, 1-4, 2006 | 33 | 2006 |
| Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics A Shanware, MR Visokay, JJ Chambers, ALP Rotondaro, H Bu, MJ Bevan, ... 2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003 | 31 | 2003 |
| Extending the reliability scaling limit of SiO/sub 2/through plasma nitridation PE Nicollian, GC Baldwin, KN Eason, DT Grider, SV Hattangady, JC Hu, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 31 | 2000 |
| Low defect density composite dielectric DT Grider III, PE Nicollian, S Hsia US Patent 5,969,397, 1999 | 31 | 1999 |
| An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes R Khamankar, H Bu, C Bowen, S Chakravarthi, PR Chidambaram, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 162-163, 2004 | 29 | 2004 |
| The roles of hydrogen and holes in trap generation and breakdown in ultra-thin SiON dielectrics PE Nicollian, AT Krishnan, C Bowen, S Chakravarthi, CA Chancellor, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 23 | 2005 |
| Process related damage monitor (predator)--systematic variation of antenna parameters to determine charge damage P Nicollian, S Krishnan US Patent 6,016,062, 2000 | 19 | 2000 |
| 0.18/spl mu/m CMOS Technology For High-performance, Low-power, And RF Applications TC Holloway, GA Dixit, DT Grider, SP Ashburn, R Aggarwal, A Shih, ... 1997 Symposium on VLSI Technology, 13-14, 1997 | 18 | 1997 |
| IEDM Tech. Dig. SV Hattangady, R Kraft, DT Grider, MA Douglas, GA Brown, PA Tiner, ... Dig, 1996 | 18 | 1996 |
| The current understanding of the trap generation mechanisms that lead to the power law model for gate dielectric breakdown PE Nicollian, AT Krishnan, CA Chancellor, RB Khamankar, ... 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 17 | 2007 |
| Physics of trap generation and electrical breakdown in ultra-thin SiO2 and SiON gate dielectric materials PE Nicollian | 14 | 2007 |
| Semiconductor device having a dielectric layer with a uniform nitrogen profile J Hu, K Eason, R Khamankar, M Rodder, P Nicollian, S Hattangady US Patent App. 10/001,338, 2003 | 14 | 2003 |
