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Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si (1 0 0) Schottky contacts
Ş Karataş, Ş Altındal, A Türüt, A Özmen
Applied surface science 217 (1-4), 250-260, 2003
3022003
Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs
A Gümüş, A Türüt, N Yalcin
Journal of Applied Physics 91 (1), 245-250, 2002
2622002
Interpreting the nonideal reverse bias CV characteristics and importance of the dependence of Schottky barrier height on applied voltage
A Turut, M Saglam, H Efeoglu, N Yalcin, M Yildirim, B Abay
Physica B: Condensed Matter 205 (1), 41-50, 1995
2051995
Electrical characterization of Au/n-ZnO Schottky contacts on n-Si
Ş Aydoğan, K Çınar, H Asıl, C Coşkun, A Türüt
Journal of Alloys and Compounds 476 (1-2), 913-918, 2009
2002009
The electrical modulus and other dielectric properties by the impedance spectroscopy of LaCrO 3 and LaCr 0.90 Ir 0.10 O 3 perovskites
M Coşkun, Ö Polat, FM Coşkun, Z Durmuş, M Çağlar, A Türüt
RSC advances 8 (9), 4634-4648, 2018
1802018
Parameter extraction from non-ideal C− V characteristics of a Schottky diode with and without interfacial layer
A Türüt, N Yalçin, M Saǧlam
Solid-state electronics 35 (6), 835-841, 1992
1801992
Fabrication and electrical characteristics of Schottky diode based on organic material
Ö Güllü, Ş Aydoğan, A Türüt
Microelectronic Engineering 85 (7), 1647-1651, 2008
1792008
Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements
Ş Karataş, Ş Altındal, A Türüt, M Çakar
Physica B: Condensed Matter 392 (1-2), 43-50, 2007
1422007
The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts
ME Aydın, A Türüt
Microelectronic Engineering 84 (12), 2875-2882, 2007
1362007
The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy
Ş Karataş, A Türüt
Vacuum 74 (1), 45-53, 2004
1342004
On temperature-dependent experimental IV and CV data of Ni/n-GaN Schottky contacts
N Yıldırım, K Ejderha, A Turut
Journal of Applied Physics 108 (11), 2010
1242010
On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature
Ş Aydoğan, M Sağlam, A Türüt
Applied surface science 250 (1-4), 43-49, 2005
1232005
Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
A Turut, A Karabulut, K Ejderha, N Bıyıklı
Materials Science in Semiconductor Processing 39, 400-407, 2015
1222015
Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101∕ n-Si and Sn/rhodamine-101∕ p-Si Schottky barrier diodes
M Çakar, N Yıldırım, Ş Karataş, C Temirci, A Türüt
Journal of applied physics 100 (7), 2006
1172006
The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect
A Türüt, B Bati, A Kökçe, M Sağlam, N Yalçin
Physica Scripta 53 (1), 118, 1996
1151996
The nonpolymeric organic compound (pyronine-B)/p-type silicon/Sn contact barrier devices
M Çakar, Y Onganer, A Türüt
Synthetic metals 126 (2-3), 213-218, 2002
1132002
Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures
Ş Aydoğan, M Sağlam, A Türüt
Microelectronic Engineering 85 (2), 278-283, 2008
1122008
Determination of the density of Si-metal interface states and excess capacitance caused by them
A Türüt, M Saǧlam
Physica B: Condensed Matter 179 (4), 285-294, 1992
1081992
Current–voltage and capacitance–voltage characteristics of polypyrrole/p-InP structure
Ş Aydoğan, M Sağlam, A Türüt
Vacuum 77 (3), 269-274, 2005
1052005
Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts
ME Aydın, N Yıldırım, A Türüt
Journal of Applied Physics 102 (4), 2007
1042007
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