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Elia Ambrosi
Elia Ambrosi
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Title
Cited by
Cited by
Year
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
W Wang, M Wang, E Ambrosi, A Bricalli, M Laudato, Z Sun, X Chen, ...
Nature communications 10 (1), 81, 2019
2472019
Solving matrix equations in one step with cross-point resistive arrays
Z Sun, G Pedretti, E Ambrosi, A Bricalli, W Wang, D Ielmini
Proceedings of the National Academy of Sciences 116 (10), 4123-4128, 2019
2122019
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ...
Advanced materials 30 (43), 1801187, 2018
1912018
Logic computing with stateful neural networks of resistive switches
Z Sun, E Ambrosi, A Bricalli, D Ielmini
Advanced Materials 30 (38), 1802554, 2018
1382018
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
E Ambrosi, A Bricalli, M Laudato, D Ielmini
Faraday discussions 213, 87-98, 2019
882019
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio
A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini
2016 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2016
782016
Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—Part II: Select devices
A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini
IEEE Transactions on Electron Devices 65 (1), 122-128, 2017
662017
Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—Part I: Memory devices
A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini
IEEE Transactions on Electron Devices 65 (1), 115-121, 2017
582017
Volatile resistive switching memory based on Ag ion drift/diffusion Part I: Numerical modeling
W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini
IEEE Transactions on Electron Devices 66 (9), 3795-3801, 2019
512019
In-memory PageRank accelerator with a cross-point array of resistive memories
Z Sun, E Ambrosi, G Pedretti, A Bricalli, D Ielmini
IEEE Transactions on Electron Devices 67 (4), 1466-1470, 2020
432020
Volatile resistive switching memory based on Ag ion drift/diffusion—Part II: Compact modeling
W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini
IEEE Transactions on Electron Devices 66 (9), 3802-3808, 2019
382019
Time complexity of in-memory solution of linear systems
Z Sun, G Pedretti, P Mannocci, E Ambrosi, A Bricalli, D Ielmini
IEEE Transactions on Electron Devices 67 (7), 2945-2951, 2020
372020
Switching dynamics of Ag-based filamentary volatile resistive switching devices—Part I: Experimental characterization
E Covi, W Wang, YH Lin, M Farronato, E Ambrosi, D Ielmini
IEEE Transactions on Electron Devices 68 (9), 4335-4341, 2021
292021
Switching dynamics of Ag-based filamentary volatile resistive switching devices—Part II: Mechanism and modeling
W Wang, E Covi, YH Lin, E Ambrosi, A Milozzi, C Sbandati, M Farronato, ...
IEEE Transactions on Electron Devices 68 (9), 4342-4349, 2021
242021
In‐Memory Eigenvector Computation in Time O(1)
Z Sun, G Pedretti, E Ambrosi, A Bricalli, D Ielmini
Advanced Intelligent Systems 2 (8), 2000042, 2020
212020
A volatile RRAM synapse for neuromorphic computing
E Covi, YH Lin, W Wang, T Stecconi, V Milo, A Bricalli, E Ambrosi, ...
2019 26th IEEE International Conference on Electronics, Circuits and Systems …, 2019
212019
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing
W Wang, A Bricalli, M Laudato, E Ambrosi, E Covi, D Ielmini
2018 IEEE International Electron Devices Meeting (IEDM), 40.3. 1-40.3. 4, 2018
212018
Low variability high endurance and low voltage arsenic-free selectors based on GeCTe
E Ambrosi, CH Wu, HY Lee, PC Chang, CF Hsu, CM Lee, CC Chang, ...
2021 IEEE International Electron Devices Meeting (IEDM), 28.5. 1-28.5. 4, 2021
152021
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM)
G Pedretti, E Ambrosi, D Ielmini
2021 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2021
152021
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks
V Milo, G Pedretti, M Laudato, A Bricalli, E Ambrosi, S Bianchi, E Chicca, ...
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018
142018
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