| Design of a hybrid memory cell using memristance and ambipolarity P Junsangsri, F Lombardi IEEE Transactions on Nanotechnology 12 (1), 71-80, 2012 | 77 | 2012 |
| A memristor-based TCAM (ternary content addressable memory) cell: design and evaluation P Junsangsri, F Lombardi Proceedings of the great lakes symposium on VLSI, 311-314, 2012 | 37 | 2012 |
| A memristor-based tcam (ternary content addressable memory) cell P Junsangsri, F Lombardi, J Han Proceedings of the 2014 IEEE/ACM International Symposium on Nanoscale …, 2014 | 27 | 2014 |
| Macromodeling a phase change memory (PCM) cell by HSPICE P Junsangsri, F Lombardi, J Han Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale …, 2012 | 22 | 2012 |
| A new comprehensive model of a phase change memory (PCM) cell P Junsangsri, F Lombardi IEEE Transactions on Nanotechnology 13 (6), 1213-1225, 2014 | 16 | 2014 |
| Logic-in-memory with a nonvolatile programmable metallization cell P Junsangsri, J Han, F Lombardi IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (2), 521-529, 2015 | 15 | 2015 |
| Design and comparative evaluation of a PCM-based CAM (content addressable memory) cell P Junsangsri, J Han, F Lombardi IEEE Transactions on Nanotechnology 16 (2), 359-363, 2017 | 13 | 2017 |
| A memristor-based memory cell using ambipolar operation P Junsangsri, F Lombardi 2011 IEEE 29th International Conference on Computer Design (ICCD), 148-153, 2011 | 12 | 2011 |
| A ternary content addressable cell using a single phase change memory (PCM) P Junsangsri, F Lombardi, J Han Proceedings of the 25th edition on Great Lakes Symposium on VLSI, 259-264, 2015 | 11 | 2015 |
| A system-level scheme for resistance drift tolerance of a multilevel phase change memory P Junsangsri, J Han, F Lombardi 2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and …, 2014 | 10 | 2014 |
| Time/temperature degradation of solar cells under the single diode model P Junsangsri, F Lombardi 2010 IEEE 25th International Symposium on Defect and Fault Tolerance in VLSI …, 2010 | 10 | 2010 |
| Modelling and extracting parameters of organic solar cells P Junsangsri, F Lombardi Electronics letters 46 (21), 1, 2010 | 9 | 2010 |
| Double diode modeling of time/temperature induced degradation of solar cells P Junsangsri, F Lombardi 2010 53rd IEEE International Midwest Symposium on Circuits and Systems, 1005 …, 2010 | 9 | 2010 |
| A memristor-based memory cell with no refresh P Junsangsri, J Han, F Lombardi 14th IEEE International Conference on Nanotechnology, 947-950, 2014 | 8 | 2014 |
| HSPICE macromodel of a programmable metallization cell (PMC) and its application to memory design P Junsangsri, F Lombardi, J Han Proceedings of the 2014 IEEE/ACM International Symposium on Nanoscale …, 2014 | 6 | 2014 |
| Error-tolerant data sketches using approximate nanoscale memories and voltage scaling P Reviriego, P Junsangsri, S Liu, F Lombardi IEEE Transactions on Nanotechnology 21, 16-22, 2021 | 5 | 2021 |
| A novel hybrid design of a memory cell using a memristor and ambipolar transistors P Junsangsri, F Lombardi 2011 11th IEEE International Conference on Nanotechnology, 748-753, 2011 | 5 | 2011 |
| A hybrid non-volatile SRAM cell with concurrent SEU detection and correction P Junsangsri, F Lombardi, J Han 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-4, 2014 | 4 | 2014 |
| Probabilistic approximate computing at nanoscales: From data structures to memories S Liu, P Reviriego, P Junsangsri, F Lombardi IEEE Nanotechnology Magazine 16 (1), 16-24, 2021 | 3 | 2021 |
| A non-volatile low-power TCAM design using racetrack memories P Junsangsri, J Han, F Lombardi 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 525-528, 2016 | 3 | 2016 |
