| A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND flash using junction-free buried channel BE-SONOS device HT Lue, TH Hsu, YH Hsiao, SP Hong, MT Wu, FH Hsu, NZ Lien, SY Wang, ... 2010 Symposium on VLSI Technology, 131-132, 2010 | 422 | 2010 |
| Bridge resistance random access memory device with a singular contact structure CH Ho, EK Lai, KY Hsieh US Patent 7,608,848, 2009 | 365 | 2009 |
| Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure EK Lai, YH Shih, TH Hsu, SC Lee, JY Hsieh, KY Hsieh US Patent 7,450,423, 2008 | 254 | 2008 |
| Programmable resistive RAM and manufacturing method CH Ho, EK Lai, KY Hsieh US Patent 7,560,337, 2009 | 252 | 2009 |
| Multi-level cell resistance random access memory with metal oxides EK Lai, CH Ho, KY Hsieh US Patent 7,697,316, 2010 | 248 | 2010 |
| Resistive random access memory and method for manufacturing the same MD Lee, CH Ho, EK Lai, KY Hsieh US Patent 8,114,715, 2012 | 227 | 2012 |
| Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states CH Ho, EK Lai, KY Hsieh US Patent 7,586,778, 2009 | 225 | 2009 |
| Manufacturing method for phase change RAM with electrode layer process EK Lai, CH Ho, YC Chen, KY Hsieh US Patent 7,605,079, 2009 | 210 | 2009 |
| Memory cell device and manufacturing method EK Lai, CH Ho, KY Hsieh US Patent 7,599,217, 2009 | 198 | 2009 |
| Future challenges of flash memory technologies CY Lu, KY Hsieh, R Liu Microelectronic engineering 86 (3), 283-286, 2009 | 198 | 2009 |
| Method for forming self-aligned thermal isolation cell for a variable resistance memory array EK Lai, CH Ho, KY Hsieh US Patent 7,531,825, 2009 | 194 | 2009 |
| Programmable resistive RAM and manufacturing method C Ho, EK Lai, KY Hsieh US Patent 7,595,218, 2009 | 179 | 2009 |
| BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability HT Lue, SY Wang, EK Lai, YH Shih, SC Lai, LW Yang, KC Chen, J Ku, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 179 | 2005 |
| Structures and methods of a bistable resistive random access memory CH Ho, EK Lai, KY Hsieh US Patent 8,129,706, 2012 | 161 | 2012 |
| Unipolar Switching Behaviors of RTO RRAM WC Chien, YC Chen, EK Lai, YD Yao, P Lin, SF Horng, J Gong, TH Chou, ... IEEE electron device letters 31 (2), 126-128, 2010 | 123 | 2010 |
| A forming-free WOxresistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability WC Chien, YR Chen, YC Chen, ATH Chuang, FM Lee, YY Lin, EK Lai, ... 2010 International Electron Devices Meeting, 19.2. 1-19.2. 4, 2010 | 112 | 2010 |
| A multi-layer stackable thin-film transistor (TFT) NAND-type flash memory EK Lai, HT Lue, YH Hsiao, JY Hsieh, CP Lu, SY Wang, LW Yang, T Yang, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 108 | 2006 |
| Operation scheme for spectrum shift in charge trapping non-volatile memory HT Lue, YH Shih, KY Hsieh, MH Lee, CI Wu, TH Hsu US Patent 7,209,390, 2007 | 105 | 2007 |
| Method for manufacturing a resistor random access memory with a self-aligned air gap insulator EK Lai, KY Hsieh, CH Ho US Patent 8,106,376, 2012 | 104 | 2012 |
| Aluminum copper oxide based memory devices and methods for manufacture WC Chien, KP Chang, YC Chen, EK Lai, KY Hsieh US Patent 8,067,815, 2011 | 103 | 2011 |
Erh-Kun LaiMacronixVerified email at mxic.com.tw
