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Ho-Young Cha
Ho-Young Cha
Verified email at hongik.ac.kr - Homepage
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Cited by
Year
The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate
YC Choi, M Pophristic, HY Cha, B Peres, MG Spencer, LF Eastman
IEEE transactions on Electron devices 53 (12), 2926-2931, 2006
1302006
High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-/RF-Sputtered-
W Choi, O Seok, H Ryu, HY Cha, KS Seo
IEEE Electron Device Letters 35 (2), 175-177, 2013
1282013
Low turn-on voltage AlGaN/GaN-on-Si rectifier with gated ohmic anode
JG Lee, BR Park, CH Cho, KS Seo, HY Cha
IEEE Electron Device Letters 34 (2), 214-216, 2013
1202013
Impact ionization coefficients in 4H-SiC
WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ...
IEEE Transactions on electron devices 55 (8), 1984-1990, 2008
1072008
Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors
HY Cha, H Wu, M Chandrashekhar, YC Choi, S Chae, G Koley, ...
Nanotechnology 17 (5), 1264, 2006
902006
Improvement of Instability in Normally-Off GaN MIS-HEMTs Employing as an Interfacial Layer
W Choi, H Ryu, N Jeon, M Lee, HY Cha, KS Seo
IEEE Electron Device Letters 35 (1), 30-32, 2013
792013
Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs
HY Cha, CI Thomas, G Koley, LF Eastman, MG Spencer
IEEE transactions on electron devices 50 (7), 1569-1574, 2003
742003
Electrical and optical modeling of 4H-SiC avalanche photodiodes
HY Cha, PM Sandvik
Japanese Journal of Applied Physics 47 (7R), 5423, 2008
702008
State-of-the-art AlGaN/GaN-on-Si heterojunction field effect transistors with dual field plates
JG Lee, BR Park, HJ Lee, M Lee, KS Seo, HY Cha
Applied Physics Express 5 (6), 066502, 2012
682012
High-Quality ICPCVD for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs
BR Park, JG Lee, W Choi, H Kim, KS Seo, HY Cha
IEEE Electron Device Letters 34 (3), 354-356, 2013
642013
4H-SiC PIN recessed-window avalanche photodiode with high quantum efficiency
H Liu, D Mcintosh, X Bai, H Pan, M Liu, JC Campbell, HY Cha
IEEE photonics technology letters 20 (18), 1551-1553, 2008
622008
Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors
J Hwang, WJ Schaff, BM Green, H Cha, LF Eastman
Solid-State Electronics 48 (2), 363-366, 2004
592004
Normally-off GaN-on-Si MISFET using PECVD SiON gate dielectric
HS Kim, SW Han, WH Jang, CH Cho, KS Seo, J Oh, HY Cha
IEEE Electron Device Letters 38 (8), 1090-1093, 2017
532017
Gallium nitride nanowire nonvolatile memory device
HY Cha, H Wu, S Chae, MG Spencer
Journal of applied physics 100 (2), 2006
522006
Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection
HY Cha, S Soloviev, S Zelakiewicz, P Waldrab, PM Sandvik
IEEE Sensors Journal 8 (3), 233-237, 2008
502008
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors
JG Lee, HS Kim, KS Seo, CH Cho, HY Cha
Solid-State Electronics 122, 32-36, 2016
462016
Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate
JH Choi, CH Cho, HY Cha
Results in Physics 9, 1170-1171, 2018
442018
Simulation study on breakdown behavior of field-plate SiC MESFETs
HY Cha, YC Choi, LF Eastman, MG Spencer
International journal of high speed electronics and systems 14 (03), 884-889, 2004
442004
High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance
YC Choi, M Pophristic, B Peres, HY Cha, MG Spencer, LF Eastman
Semiconductor science and technology 22 (5), 517, 2007
402007
SiNx prepassivation of AlGaN/GaN high-electron-mobility transistors using remote-mode plasma-enhanced chemical vapor deposition
JC Her, HJ Cho, CS Yoo, HY Cha, JE Oh, KS Seo
Japanese Journal of Applied Physics 49 (4R), 041002, 2010
372010
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