The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate YC Choi, M Pophristic, HY Cha, B Peres, MG Spencer, LF Eastman IEEE transactions on Electron devices 53 (12), 2926-2931, 2006 | 130 | 2006 |
High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-/RF-Sputtered- W Choi, O Seok, H Ryu, HY Cha, KS Seo IEEE Electron Device Letters 35 (2), 175-177, 2013 | 128 | 2013 |
Low turn-on voltage AlGaN/GaN-on-Si rectifier with gated ohmic anode JG Lee, BR Park, CH Cho, KS Seo, HY Cha IEEE Electron Device Letters 34 (2), 214-216, 2013 | 120 | 2013 |
Impact ionization coefficients in 4H-SiC WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ... IEEE Transactions on electron devices 55 (8), 1984-1990, 2008 | 107 | 2008 |
Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors HY Cha, H Wu, M Chandrashekhar, YC Choi, S Chae, G Koley, ... Nanotechnology 17 (5), 1264, 2006 | 90 | 2006 |
Improvement of Instability in Normally-Off GaN MIS-HEMTs Employing as an Interfacial Layer W Choi, H Ryu, N Jeon, M Lee, HY Cha, KS Seo IEEE Electron Device Letters 35 (1), 30-32, 2013 | 79 | 2013 |
Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs HY Cha, CI Thomas, G Koley, LF Eastman, MG Spencer IEEE transactions on electron devices 50 (7), 1569-1574, 2003 | 74 | 2003 |
Electrical and optical modeling of 4H-SiC avalanche photodiodes HY Cha, PM Sandvik Japanese Journal of Applied Physics 47 (7R), 5423, 2008 | 70 | 2008 |
State-of-the-art AlGaN/GaN-on-Si heterojunction field effect transistors with dual field plates JG Lee, BR Park, HJ Lee, M Lee, KS Seo, HY Cha Applied Physics Express 5 (6), 066502, 2012 | 68 | 2012 |
High-Quality ICPCVD for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs BR Park, JG Lee, W Choi, H Kim, KS Seo, HY Cha IEEE Electron Device Letters 34 (3), 354-356, 2013 | 64 | 2013 |
4H-SiC PIN recessed-window avalanche photodiode with high quantum efficiency H Liu, D Mcintosh, X Bai, H Pan, M Liu, JC Campbell, HY Cha IEEE photonics technology letters 20 (18), 1551-1553, 2008 | 62 | 2008 |
Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors J Hwang, WJ Schaff, BM Green, H Cha, LF Eastman Solid-State Electronics 48 (2), 363-366, 2004 | 59 | 2004 |
Normally-off GaN-on-Si MISFET using PECVD SiON gate dielectric HS Kim, SW Han, WH Jang, CH Cho, KS Seo, J Oh, HY Cha IEEE Electron Device Letters 38 (8), 1090-1093, 2017 | 53 | 2017 |
Gallium nitride nanowire nonvolatile memory device HY Cha, H Wu, S Chae, MG Spencer Journal of applied physics 100 (2), 2006 | 52 | 2006 |
Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection HY Cha, S Soloviev, S Zelakiewicz, P Waldrab, PM Sandvik IEEE Sensors Journal 8 (3), 233-237, 2008 | 50 | 2008 |
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors JG Lee, HS Kim, KS Seo, CH Cho, HY Cha Solid-State Electronics 122, 32-36, 2016 | 46 | 2016 |
Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate JH Choi, CH Cho, HY Cha Results in Physics 9, 1170-1171, 2018 | 44 | 2018 |
Simulation study on breakdown behavior of field-plate SiC MESFETs HY Cha, YC Choi, LF Eastman, MG Spencer International journal of high speed electronics and systems 14 (03), 884-889, 2004 | 44 | 2004 |
High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance YC Choi, M Pophristic, B Peres, HY Cha, MG Spencer, LF Eastman Semiconductor science and technology 22 (5), 517, 2007 | 40 | 2007 |
SiNx prepassivation of AlGaN/GaN high-electron-mobility transistors using remote-mode plasma-enhanced chemical vapor deposition JC Her, HJ Cho, CS Yoo, HY Cha, JE Oh, KS Seo Japanese Journal of Applied Physics 49 (4R), 041002, 2010 | 37 | 2010 |