Isaac Bryan
Isaac Bryan
ncsu.edu üzerinde doğrulanmış e-posta adresine sahip
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo
Applied Physics Letters 106 (14), 142107, 2015
1282015
Surface kinetics in AlN growth: a universal model for the control of surface morphology in III-nitrides
I Bryan, Z Bryan, S Mita, A Rice, J Tweedie, R Collazo, Z Sitar
Journal of Crystal Growth 438, 81-89, 2016
962016
The role of surface kinetics on composition and quality of AlGaN
I Bryan, Z Bryan, S Mita, A Rice, L Hussey, C Shelton, J Tweedie, ...
Journal of Crystal Growth 451, 65-71, 2016
822016
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ...
Applied Physics Letters 103 (16), 161901-161901-5, 2013
822013
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
P Reddy, I Bryan, Z Bryan, W Guo, L Hussey, R Collazo, Z Sitar
Journal of Applied Physics 116 (12), 123701, 2014
732014
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ...
Applied Physics Letters 104 (20), 202106, 2014
672014
Electronic Biosensors Based on III-Nitride Semiconductors
R Kirste, N Rohrbaugh, I Bryan, Z Bryan, R Collazo, A Ivanisevic
Annual Review of Analytical Chemistry 8, 149-169, 2015
632015
Polarity control and growth of lateral polarity structures in AlN
R Kirste, S Mita, L Hussey, MP Hoffmann, W Guo, I Bryan, Z Bryan, ...
Applied Physics Letters 102 (18), 181913-181913-4, 2013
622013
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ...
Applied Physics Letters 112 (6), 062102, 2018
612018
Comparative study of etching high crystalline quality AlN and GaN
W Guo, J Xie, C Akouala, S Mita, A Rice, J Tweedie, I Bryan, R Collazo, ...
Journal of crystal growth 366, 20-25, 2013
612013
On compensation in Si-doped AlN
JS Harris, JN Baker, BE Gaddy, I Bryan, Z Bryan, KJ Mirrielees, P Reddy, ...
Applied Physics Letters 112 (15), 152101, 2018
592018
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
W Guo, Z Bryan, J Xie, R Kirste, S Mita, I Bryan, L Hussey, M Bobea, ...
Journal of Applied Physics 115 (10), 103108, 2014
562014
Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates
Z Bryan, I Bryan, S Mita, J Tweedie, Z Sitar, R Collazo
Applied Physics Letters 106 (23), 232101, 2015
522015
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
Z Bryan, I Bryan, BE Gaddy, P Reddy, L Hussey, M Bobea, W Guo, ...
Applied Physics Letters 105 (22), 222101, 2014
502014
Homoepitaxial AlN thin films deposited on m-plane () AlN substrates by metalorganic chemical vapor deposition
I Bryan, Z Bryan, M Bobea, L Hussey, R Kirste, R Collazo, Z Sitar
Journal of Applied Physics 116 (13), 133517, 2014
472014
Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition
I Bryan, A Rice, L Hussey, Z Bryan, M Bobea, S Mita, J Xie, R Kirste, ...
Applied Physics Letters 102, 061602, 2013
472013
HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties
T Sochacki, Z Bryan, M Amilusik, M Bobea, M Fijalkowski, I Bryan, ...
Journal of crystal growth 394, 55-60, 2014
442014
Ge doped GaN with controllable high carrier concentration for plasmonic applications
R Kirste, MP Hoffmann, E Sachet, M Bobea, Z Bryan, I Bryan, C Nenstiel, ...
Applied Physics Letters 103 (24), 242107, 2013
432013
KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ...
Applied Physics Letters 106 (8), 082110, 2015
422015
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
P Reddy, I Bryan, Z Bryan, J Tweedie, S Washiyama, R Kirste, S Mita, ...
Applied Physics Letters 107 (9), 091603, 2015
402015
Sistem, işlemi şu anda gerçekleştiremiyor. Daha sonra yeniden deneyin.
Makaleler 1–20