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Neslihan Ayarcı Kuruoğlu
Neslihan Ayarcı Kuruoğlu
Other namesNeslihan Ayarcı, Neslihan A. Kuruoğlu, Ayarcı Kuruoğlu N.
Fizik bölümü Araştırma Görevlisi, Yıldız Teknik Üniversitesi
Verified email at yildiz.edu.tr - Homepage
Title
Cited by
Cited by
Year
Betavoltaic study of a GaN pin structure grown by metal-organic vapour phase epitaxy with a Ni-63 source
NA Kuruoğlu, O Özdemir, K Bozkurt
Thin Solid Films 636, 746-750, 2017
262017
Dc and ac electrical response of MOCVD grown GaN in pin structure, assessed through I–V and admittance measurement
NA Kuruoğlu, O Özdemir, K Bozkurt, S Sundaram, JP Salvestrini, ...
Journal of Physics D: Applied Physics 50 (50), 505109, 2017
52017
Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through Measurements
N Ayarcı, O Özdemir, K Bozkurt, A Ramdane, S Belahsene, A Martinez
IEEE Transactions on Electron Devices 63 (5), 1866-1870, 2016
52016
Impact of trap states on inductive phenomena in 30% InGaN/GaN MQW LED devices
K Bozkurt, O Özdemir, NA Kuruoğlu, B Alshehri, K Dogheche, Q Gaimard, ...
Journal of Physics D: Applied Physics 52 (10), 105102, 2019
42019
Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy
NA Kuruoğlu, O Özdemir, K Bozkurt, S Belahsene, A Martinez, ...
IEEE Transactions on Electron Devices 64 (7), 2881-2885, 2017
42017
Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents
N Ayarcı Kuruoğlu, O Özdemir, K Bozkurt, H Baş, B Alshehri, K Dogheche, ...
Journal of Materials Science: Materials in Electronics 33 (24), 19151-19159, 2022
22022
Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p–i–n structure
O Özdemir, K Bozkurt, NA Kuruoğlu, H Baş, B Alshehri, K Dogheche, ...
Journal of Physics D: Applied Physics 52 (34), 345302, 2019
22019
Indium and hafnium chloride modified titanium oxide thin films
NA Kuruoğlu, FPG Choi, O Özdemir
Optik 283, 170921, 2023
12023
Determination of band tail widths in MOCVD grown InGaN single layer within GaN based pin LED structure through photo-induced measurements
O Özdemir, K Bozkurt, NA Kuruoğlu, H Baş, F Sarcan, A Erol, B Alshehri, ...
Journal of Luminescence 255, 119543, 2023
12023
Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based pin Laser Heterostructures
NA Kuruoğlu, O Özdemir, K Bozkurt
Journal of Materials Science and Chemical Engineering 5 (9), 1-9, 2017
12017
Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in pin structure
O Özdemir, H Baş, NA Kuruoğlu, K Bozkurt, M Aydın, F Sarcan, A Erol, ...
Journal of Luminescence 257, 119749, 2023
2023
MOCVD ile büyütülen GaN pin yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesi
NA KURUOĞLU
Journal of the Institute of Science and Technology 12 (1), 207-216, 2022
2022
Electro-optical analysis of 30% InGaN/GaN MQW LED devices
K Bozkurt, O Özdemir, NA Kuruoğlu, B Alshehri, K Dogheche, Q Gaimard, ...
10th International Conference on Materials for Advanced Technologies, ICMAT 2019, 2019
2019
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Articles 1–13