PIL SUNG PARK
PIL SUNG PARK
Technology Development Center, Samsung Electronics
Verified email at osu.edu
Title
Cited by
Cited by
Year
Large area single crystal (0001) oriented MoS2
MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ...
Applied Physics Letters 102 (25), 252108, 2013
2062013
Polarization-engineered GaN/InGaN/GaN tunnel diodes
S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan
Applied Physics Letters 97 (20), 203502, 2010
1362010
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan
Applied Physics Letters 100 (11), 111118, 2012
1192012
Low resistance GaN/InGaN/GaN tunnel junctions
S Krishnamoorthy, F Akyol, PS Park, S Rajan
Applied Physics Letters 102 (11), 113503, 2013
1032013
Simulation of short-channel effects in N-and Ga-polar AlGaN/GaN HEMTs
PS Park, S Rajan
IEEE transactions on electron devices 58 (3), 704-708, 2011
852011
Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
TH Hung, S Krishnamoorthy, M Esposto, D Neelim Nath, P Sung Park, ...
Applied Physics Letters 102 (7), 072105, 2013
742013
N-polar III–nitride green (540 nm) light emitting diode
F Akyol, DN Nath, E Gür, PS Park, S Rajan
Japanese Journal of Applied Physics 50 (5R), 052101, 2011
712011
GdN nanoisland-based GaN tunnel junctions
S Krishnamoorthy, TF Kent, J Yang, PS Park, RC Myers, S Rajan
Nano letters 13 (6), 2570-2575, 2013
662013
Interface charge engineering for enhancement-mode GaN MISHEMTs
TH Hung, PS Park, S Krishnamoorthy, DN Nath, S Rajan
IEEE Electron Device Letters 35 (3), 312-314, 2014
642014
Demonstration of forward inter-band tunneling in GaN by polarization engineering
S Krishnamoorthy, PS Park, S Rajan
Applied Physics Letters 99 (23), 233504, 2011
572011
Unipolar vertical transport in GaN/AlGaN/GaN heterostructures
DN Nath, ZC Yang, CY Lee, PS Park, YR Wu, S Rajan
Applied Physics Letters 103 (2), 022102, 2013
522013
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ...
Applied Physics Letters 107 (15), 153504, 2015
442015
Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization
P Sung Park, DN Nath, S Krishnamoorthy, S Rajan
Applied Physics Letters 100 (6), 063507, 2012
432012
Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3
TH Hung, K Sasaki, A Kuramata, DN Nath, P Sung Park, C Polchinski, ...
Applied Physics Letters 104 (16), 162106, 2014
322014
Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion
P Sung Park, KM Reddy, DN Nath, Z Yang, NP Padture, S Rajan
Applied Physics Letters 102 (15), 153501, 2013
312013
Graded AlGaN channel transistors for improved current and power gain linearity
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
262017
Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs
PS Park, S Krishnamoorthy, S Bajaj, DN Nath, S Rajan
IEEE Electron Device Letters 36 (3), 226-228, 2015
202015
Quantum capacitance in N-polar GaN/AlGaN/GaN heterostructures
PS Park, DN Nath, S Rajan
IEEE electron device letters 33 (7), 991-993, 2012
152012
Polarization engineered 1-dimensional electron gas arrays
DN Nath, PS Park, M Esposto, D Brown, S Keller, UK Mishra, S Rajan
Journal of Applied Physics 111 (4), 043715, 2012
102012
III-nitride tunnel diodes with record forward tunnel current density
S Krishnamoorthy, PS Park, S Rajan
69th Device Research Conference, 1-2, 2011
42011
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Articles 1–20