A charge-plasma-based dielectric-modulated junctionless TFET for biosensor label-free detection D Singh, S Pandey, K Nigam, D Sharma, DS Yadav, P Kondekar IEEE Transactions on Electron Devices 64 (1), 271-278, 2016 | 178 | 2016 |
Performance assessment of a novel vertical dielectrically modulated TFET-based biosensor M Verma, S Tirkey, S Yadav, D Sharma, DS Yadav IEEE Transactions on Electron Devices 64 (9), 3841-3848, 2017 | 150 | 2017 |
Drain work function engineered doping-less charge plasma TFET for ambipolar suppression and RF performance improvement: a proposal, design, and investigation BR Raad, D Sharma, P Kondekar, K Nigam, DS Yadav IEEE Transactions on Electron Devices 63 (10), 3950-3957, 2016 | 107 | 2016 |
Analysis of a novel metal implant junctionless tunnel FET for better DC and analog/RF electrostatic parameters S Tirkey, D Sharma, DS Yadav, S Yadav IEEE Transactions on Electron Devices 64 (9), 3943-3950, 2017 | 73 | 2017 |
Impactful study of dual work function, underlap and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization DS Yadav, D Sharma, BR Raad, V Bajaj Superlattices and Microstructures 96, 36-46, 2016 | 52 | 2016 |
A novel approach to improve the performance of charge plasma tunnel field-effect transistor S Tirkey, D Sharma, BR Raad, DS Yadav IEEE Transactions On Electron Devices 65 (1), 282-289, 2017 | 31 | 2017 |
Dual workfunction hetero gate dielectric tunnel field-effect transistor performance analysis DS Yadav, D Sharma, BR Raad, V Bajaj 2016 International Conference on Advanced Communication Control and …, 2016 | 25 | 2016 |
A Low Power Single Gate L-shaped TFET for High Frequency Application P Singh, DP Samajdar, DS Yadav 2021 6th International Conference for Convergence in Technology (I2CT), 1-6, 2021 | 24 | 2021 |
A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature DS Yadav, BR Raad, D Sharma Superlattices and Microstructures 100, 266-273, 2016 | 24 | 2016 |
Impact of temperature on analog/RF, linearity and reliability performance metrics of tunnel FET with ultra-thin source region P Singh, DS Yadav Applied Physics A 127 (9), 1-15, 2021 | 21 | 2021 |
Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance DS Yadav, A Verma, D Sharma, S Tirkey, BR Raad Superlattices and Microstructures 111, 123-133, 2017 | 20 | 2017 |
Sensitivity and sensing speed analysis of extended nano-cavity and source over electrode in Si/SiGe based TFET biosensor A Lodhi, C Rajan, AK Behera, DP Samajdar, D Soni, DS Yadav Applied Physics A 126 (11), 1-8, 2020 | 19 | 2020 |
3d networking and collaborative environment for online education YP Gupta, A Chawla, T Pal, MP Reddy, DS Yadav 2022 10th International Conference on Emerging Trends in Engineering and …, 2022 | 18 | 2022 |
Performance investigation of hetero material (InAs/Si)‐based charge plasma TFET DS Yadav, D Sharma, A Kumar, D Rathor, R Agrawal, S Tirkey, BR Raad, ... Micro & Nano Letters 12 (6), 358-363, 2017 | 17 | 2017 |
Performance analysis of gate all around GaAsP/AlGaSb CP-TFET A Lemtur, D Sharma, P Suman, J Patel, DS Yadav, N Sharma Superlattices and Microstructures 117, 364-372, 2018 | 16 | 2018 |
Design and investigation of f-shaped tunnel fet with enhanced analog/rf parameters P Singh, DS Yadav Silicon, 1-16, 2021 | 15 | 2021 |
Controlling ambipolar current of dopingless tunnel field-effect transistor S Tirkey, DS Yadav, D Sharma Applied Physics A 124 (12), 1-8, 2018 | 15 | 2018 |
Study of metal strip insertion and its optimization in doping less TFET DS Yadav, A Verma, D Sharma, N Sharma Superlattices and Microstructures 122, 577-586, 2018 | 15 | 2018 |
Temperature based performance analysis of doping-less tunnel field effect transistor DS Yadav, D Sharma, R Agrawal, G Prajapati, S Tirkey, BR Raad, V Bajaj 2017 International Conference on Information, Communication, Instrumentation …, 2017 | 15 | 2017 |
Performance investigation of a novel GaAs1-xSbx-on-insulator (GASOI) FinFET: Role of interface trap charges and hetero dielectric A Dixit, DP Samajdar, N Bagga, DS Yadav Materials Today Communications 26, 101964, 2021 | 14 | 2021 |