| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 234 | 2022 |
| Ab initio velocity-field curves in monoclinic β-Ga2O3 K Ghosh, U Singisetti Journal of Applied Physics 122 (3), 035702, 2017 | 156 | 2017 |
| Ab initio calculation of electron–phonon coupling in monoclinic β-Ga2O3 crystal K Ghosh, U Singisetti Applied Physics Letters 109 (7), 2016 | 121 | 2016 |
| Impact ionization in β-Ga2O3 K Ghosh, U Singisetti Journal of Applied Physics 124 (8), 2018 | 120 | 2018 |
| Conduction mechanisms in CVD-grown monolayer MoS2 transistors: from variable-range hopping to velocity saturation G He, K Ghosh, U Singisetti, H Ramamoorthy, R Somphonsane, G Bohra, ... Nano letters 15 (8), 5052-5058, 2015 | 109 | 2015 |
| (Invited Paper) Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement K Ghosh, U Singisetti Journal of Materials Research 32 (22), 4142-4152, 2017 | 105 | 2017 |
| DFT-FE–A massively parallel adaptive finite-element code for large-scale density functional theory calculations P Motamarri, S Das, S Rudraraju, K Ghosh, D Davydov, V Gavini Computer Physics Communications 246, 106853, 2020 | 98 | 2020 |
| Thermoelectric transport coefficients in mono-layer MoS2 and WSe2: Role of substrate, interface phonons, plasmon, and dynamic screening K Ghosh, U Singisetti Journal of Applied Physics 118 (13), 135711, 2015 | 49 | 2015 |
| All-electron density functional calculations for electron and nuclear spin interactions in molecules and solids K Ghosh, H Ma, V Gavini, G Galli Physical Review Materials 3 (4), 043801, 2019 | 40 | 2019 |
| Assessment of phonon scattering-related mobility in β-Ga2O3 A Parisini, K Ghosh, U Singisetti, R Fornari Semiconductor Science and Technology 33 (10), 105008, 2018 | 33 | 2018 |
| RF Performance and Avalanche Breakdown Analysis of InN Tunnel FETs K Ghosh, U Singisetti IEEE Transactions on Electron Devices 61 (10), 3405-3410, 2014 | 32* | 2014 |
| Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1− x) 2O3/Ga2O3 heterostructures A Kumar, K Ghosh, U Singisetti Journal of Applied Physics 128 (10), 2020 | 31 | 2020 |
| Negative differential conductance & hot-carrier avalanching in monolayer WS2 FETs G He, J Nathawat, CP Kwan, H Ramamoorthy, R Somphonsane, M Zhao, ... Scientific reports 7 (1), 11256, 2017 | 31 | 2017 |
| Calculation of electron impact ionization co-efficient in β-Ga2O3 K Ghosh, U Singisetti 72nd Device Research Conference, 71-72, 2014 | 18 | 2014 |
| Spin–spin interactions in defects in solids from mixed all-electron and pseudopotential first-principles calculations K Ghosh, H Ma, M Onizhuk, V Gavini, G Galli npj Computational Materials 7 (1), 123, 2021 | 12 | 2021 |
| Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices K Ghosh, U Singisetti Journal of Applied Physics 117 (6), 065703, 2015 | 7 | 2015 |
| Low-field and high-field transport in β-Ga2O3 K Ghosh, U Singisetti Gallium Oxide, 149-168, 2019 | 6 | 2019 |
| Theory of High Field Transport in β-Ga2O3 K Ghosh, U Singisetti International Journal of High Speed Electronics and Systems 28 (01n02), 1940008, 2019 | 4 | 2019 |
| Electrical Properties 2 K Ghosh, A Kumar, U Singisetti Gallium Oxide: Materials Properties, Crystal Growth, and Devices 293, 407, 2020 | 3 | 2020 |
| Characterization and closed-form modeling of edge/top/hybrid metal-2D semiconductor contacts A Pal, V Mishra, J Weber, K Krishnaswamy, K Ghosh, AV Penumatcha, ... 2022 International Electron Devices Meeting (IEDM), 28.5. 1-28.5. 4, 2022 | 2 | 2022 |
