| The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes Ş Altındal, S Karadeniz, N Tuğluoğlu, A Tataroğlu Solid-State Electronics 47 (10), 1847-1854, 2003 | 260 | 2003 |
| Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Al/SiO2/p-Si (MIS) Schottky diodes A Tataroğlu, Ş Altındal Microelectronic engineering 83 (3), 582-588, 2006 | 196* | 2006 |
| Frequency and voltage effects on the dielectric properties and electrical conductivity of Al–TiW–Pd2Si/n-Si structures IM Afandiyeva, İ Dökme, Ş Altındal, MM Bülbül, A Tataroğlu Microelectronic Engineering 85 (2), 247-252, 2008 | 144 | 2008 |
| The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si Schottky diodes H Kanbur, Ş Altındal, A Tataroğlu applied surface science 252 (5), 1732-1738, 2005 | 109 | 2005 |
| Density of interface states, excess capacitance and series resistance in the metal–insulator–semiconductor (MIS) solar cells Ş Altındal, A Tataroğlu, İ Dökme Solar energy materials and solar cells 85 (3), 345-358, 2005 | 107 | 2005 |
| The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics A Tataroğlu, Ş Altındal Journal of Alloys and Compounds 484 (1-2), 405-409, 2009 | 105 | 2009 |
| On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures F Parlaktürk, Ş Altındal, A Tataroğlu, M Parlak, A Agasiev Microelectronic engineering 85 (1), 81-88, 2008 | 100 | 2008 |
| Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high–low frequency capacitance and conductance methods A Tataroğlu, Ş Altındal microelectronic engineering 85 (11), 2256-2260, 2008 | 99 | 2008 |
| On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics A Büyükbaş Uluşan, A Tataroğlu, Y Azizian-Kalandaragh, Ş Altındal Journal of Materials Science: Materials in Electronics 29, 159-170, 2018 | 96 | 2018 |
| The distribution of barrier heights in MIS type Schottky diodes from current–voltage–temperature (I–V–T) measurements A Tataroğlu, Ş Altındal Journal of Alloys and Compounds 479 (1-2), 893-897, 2009 | 86 | 2009 |
| On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes Ş Altındal, H Kanbur, İ Yücedağ, A Tataroğlu Microelectronic engineering 85 (7), 1495-1501, 2008 | 85 | 2008 |
| On the profile of frequency dependent series resistance and dielectric constant in MIS structure İ Yücedağ, Ş Altındal, A Tataroğlu Microelectronic engineering 84 (1), 180-186, 2007 | 85 | 2007 |
| Analysis of interface states and series resistance of MIS Schottky diodes using the current–voltage (I–V) characteristics A Tataroğlu, Ş Altındal Microelectronic Engineering 85 (1), 233-237, 2008 | 80 | 2008 |
| Electrical and dielectric properties of MIS Schottky diodes at low temperatures A Tataroğlu Microelectronic engineering 83 (11-12), 2551-2557, 2006 | 80 | 2006 |
| Frequency and voltage dependence of dielectric properties, complex electric modulus, and electrical conductivity in Au/7% graphene doped‐PVA/n‐Si (MPS) structures S Altındal Yerişkin, M Balbaşı, A Tataroğlu Journal of Applied Polymer Science 133 (33), 2016 | 79 | 2016 |
| Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current–voltage and admittance–voltage characteristics Ş Altındal, İ Yücedağ, A Tataroğlu Vacuum 84 (3), 363-368, 2009 | 71 | 2009 |
| Photodiode and photocapacitor properties of Au/CdTe/p-Si/Al device AS Dahlan, A Tataroğlu, AA Al-Ghamdi, AA Al-Ghamdi, S Bin-Omran, ... Journal of Alloys and Compounds 646, 1151-1156, 2015 | 68 | 2015 |
| Influence of temperature and frequency on dielectric permittivity and ac conductivity of Au/SnO2/n-Si (MOS) structures R Ertuğrul, A Tataroğlu Chinese Physics Letters 29 (7), 077304, 2012 | 65 | 2012 |
| Au/SnO2/n-Si (MOS) structures response to radiation and frequency A Tataroğlu, Ş Altındal, S Karadeniz, N Tuğluoğlu Microelectronics journal 34 (11), 1043-1049, 2003 | 64 | 2003 |
| Study on the frequency dependence of electrical and dielectric characteristics of Au/SnO2/n-Si (MIS) structures A Tataroğlu, Ş Altındal Microelectronic engineering 85 (9), 1866-1871, 2008 | 63* | 2008 |
