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Yijian Ouyang
Yijian Ouyang
Maxim Integrated
Verified email at ufl.edu
Title
Cited by
Cited by
Year
Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors
X Wang, Y Ouyang, X Li, H Wang, J Guo, H Dai
Physical review letters 100 (20), 206803, 2008
18502008
Performance limits of monolayer transition metal dichalcogenide transistors
L Liu, SB Kumar, Y Ouyang, J Guo
IEEE Transactions on Electron Devices 58 (9), 3042-3047, 2011
5872011
A theoretical study on thermoelectric properties of graphene nanoribbons
Y Ouyang, J Guo
Applied Physics Letters 94 (26), 2009
2872009
Controlled chlorine plasma reaction for noninvasive graphene doping
J Wu, L Xie, Y Li, H Wang, Y Ouyang, J Guo, H Dai
Journal of the American Chemical Society 133 (49), 19668-19671, 2011
2592011
Graphene nanoribbons with smooth edges behave as quantum wires
X Wang, Y Ouyang, L Jiao, H Wang, L Xie, J Wu, J Guo, H Dai
Nature nanotechnology 6 (9), 563-567, 2011
2052011
Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study
Y Ouyang, Y Yoon, J Guo
IEEE Transactions on Electron Devices 54 (9), 2223-2231, 2007
1912007
Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors
Y Ouyang, Y Yoon, JK Fodor, J Guo
Applied Physics Letters 89 (20), 2006
1722006
Gate electrostatics and quantum capacitance of graphene nanoribbons
J Guo, Y Yoon, Y Ouyang
Nano Letters 7 (7), 1935-1940, 2007
1242007
Carrier scattering in graphene nanoribbon field-effect transistors
Y Ouyang, X Wang, H Dai, J Guo
Applied Physics Letters 92 (24), 2008
592008
Analysis of ballistic monolayer and bilayer graphene field-effect transistors
Y Ouyang, P Campbell, J Guo
Applied Physics Letters 92 (6), 2008
552008
Projected performance advantage of multilayer graphene nanoribbons as a transistor channel material
Y Ouyang, H Dai, J Guo
Nano Research 3, 8-15, 2010
482010
Effect of phonon scattering on intrinsic delay and cutoff frequency of carbon nanotube FETs
Y Yoon, Y Ouyang, J Guo
IEEE Transactions on Electron Devices 53 (10), 2467-2470, 2006
482006
Heat dissipation in carbon nanotube transistors
Y Ouyang, J Guo
Applied Physics Letters 89 (18), 2006
352006
Effects of edge chemistry doping on graphene nanoribbon mobility
Y Ouyang, S Sanvito, J Guo
Surface science 605 (17-18), 1643-1648, 2011
322011
Time-dependent quantum transport and nonquasistatic effects in carbon nanotube transistors
Y Chen, Y Ouyang, J Guo, TX Wu
Applied Physics Letters 89 (20), 2006
302006
Carbon-based nanomaterials as contacts to graphene nanoribbons
Y Ouyang, J Guo
Applied Physics Letters 97 (26), 2010
182010
Spin-polarized edge and transport in graphene nanoscale junctions
J Guo, Y Ouyang
Applied Physics Letters 94 (24), 2009
172009
Edge chemistry engineering of graphene nanoribbon transistors: A computational study
Y Ouyang, Y Yoon, J Guo
2008 IEEE International Electron Devices Meeting, 1-4, 2008
132008
Subband gap impact ionization and excitation in carbon nanotube transistors
J Guo, MA Alam, Y Ouyang
Journal of applied physics 101 (6), 2007
112007
Two-dimensional quantum mechanical modeling of silicide–silicon contact resistance for nanoscale silicon-on-insulator metal-oxide-semiconductor field effect transistor
Q Gao, Y Ouyang, J Guo
Journal of Applied Physics 109 (10), 2011
82011
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