Ram Krishna Ghosh
Title
Cited by
Cited by
Year
Two-dimensional gallium nitride realized via graphene encapsulation
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature materials 15 (11), 1166-1171, 2016
2882016
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ...
Nature Communications 6, 7311, 2015
2652015
Atomically thin heterostructures based on single-layer tungsten diselenide and graphene
YC Lin, CYS Chang, RK Ghosh, J Li, H Zhu, R Addou, B Diaconescu, ...
Nano letters 14 (12), 6936-6941, 2014
1222014
Monolayer transition metal dichalcogenide channel-based tunnel transistor
RK Ghosh, S Mahapatra
IEEE Journal of the electron devices society 1 (10), 175-180, 2013
812013
Performance Analysis of Strained MonolayerMOSFET
A Sengupta, RK Ghosh, S Mahapatra
IEEE transactions on electron devices 60 (9), 2782-2787, 2013
302013
Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs
N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ...
2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016
292016
Germanane: A low effective mass and high bandgap 2-D channel material for future FETs
RK Ghosh, M Brahma, S Mahapatra
IEEE Transactions on Electron Devices 61 (7), 2309-2315, 2014
282014
Direct Band-to-Band Tunneling in Reverse BiasedNanoribbon p-n Junctions
RK Ghosh, S Mahapatra
IEEE transactions on electron devices 60 (1), 274-279, 2012
272012
Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6and Ge/Ge0.93Sn0.07hetero-junction tunnel FETs
R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2016
232016
Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors
C Schulte-Braucks, R Pandey, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
IEEE Transactions on Electron Devices 64 (10), 4354-4362, 2017
172017
Two-dimensional tantalum disulfide: controlling structure and properties via synthesis
R Zhao, B Grisafe, RK Ghosh, S Holoviak, B Wang, K Wang, N Briggs, ...
2D Materials 5 (2), 025001, 2018
152018
Electrically triggered insulator-to-metal phase transition in two-dimensional (2D) heterostructures
B Grisafe, R Zhao, RK Ghosh, JA Robinson, S Datta
Applied Physics Letters 113 (14), 142101, 2018
112018
Fundamental mechanism behind volatile and non-volatile switching in metallic conducting bridge RAM
N Shukla, RK Ghosh, B Grisafe, S Datta
2017 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2017
102017
Proposal for Graphene–Boron nitride heterobilayer-based tunnel FET
RK Ghosh, S Mahapatra
IEEE transactions on nanotechnology 12 (5), 665-667, 2013
102013
Hubbard gap modulation in vanadium dioxide nanoscale tunnel junctions
M Huefner, RK Ghosh, E Freeman, N Shukla, H Paik, DG Schlom, S Datta
Nano letters 14 (11), 6115-6120, 2014
82014
Stabilizing the commensurate charge-density wave in 1T-tantalum disulfide at higher temperatures via potassium intercalation
R Zhao, B Grisafe, RK Ghosh, K Wang, S Datta, J Robinson
Nanoscale 11 (13), 6016-6022, 2019
52019
Heterojunction resonant tunneling diode at the atomic limit
RK Ghosh, YC Lin, JA Robinson, S Datta
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
42015
Magnetic bipolar transistor based on ZnO/NiO/Si heterostructure using pulsed laser deposition
H Kaur, M Sharma, RK Ghosh, S Mohapatra, BK Kuanr
AIP Advances 10 (1), 015119, 2020
32020
Band structure engineered germanium-tin (GeSn) p-channel tunnel transistors
R Pandey, R Ghosh, S Datta
2016 International Symposium on VLSI Technology, Systems and Application …, 2016
32016
Strain engineering of ferroelectric KNbO3 for bulk photovoltaic applications: an insight from density functional theory calculations
RP Tiwari, B Birajdar, RK Ghosh
Journal of Physics: Condensed Matter 31 (50), 505502, 2019
22019
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Articles 1–20