| Single-layer MoS 2 transistors B Radisavljevic, A Radenovic, J Brivio, V Giacometti, A Kis Nature nanotechnology 6 (3), 147-150, 2011 | 11333 | 2011 |
| Mobility engineering and metal-insulator transition in monolayer MoS2 B Radisavljevic, A Kis Nature Materials 12, 815-820, 2013 | 1356 | 2013 |
| Integrated Circuits and Logic Operations Based on Single-Layer MoS2 B Radisavljevic, MB Whitwick, A Kis ACS nano 5 (12), 9934-9938, 2011 | 1210 | 2011 |
| Visibility of dichalcogenide nanolayers MM Benameur, B Radisavljevic, JS Héron, S Sahoo, H Berger, A Kis Nanotechnology 22 (12), 125706, 2011 | 473 | 2011 |
| Small-signal amplifier based on single-layer MoS2 B Radisavljevic, MB Whitwick, A Kis Applied Physics Letters 101 (4), 043103, 2012 | 211 | 2012 |
| i. V. Giacometti and A. Kis B Radisavljevic, A Radenovic, J Brivio Nat. Nanotechnol 6 (3), 147-150, 2011 | 201 | 2011 |
| Reply to'Measurement of mobility in dual-gated MoS 2 transistors' B Radisavljevic, A Kis Nature nanotechnology 8 (3), 147-148, 2013 | 101 | 2013 |
| ACS Nano 5, 9934 (2011) B Radisavljevic, MB Whitwick, A Kis | 59 | 1936 |
| Semiconductor device A Kis, B Radisavljevic US Patent 9,608,101, 2017 | 58 | 2017 |
| Correction to Integrated Circuits and Logic Operations Based on Single-Layer MoS2 B Radisavljevic, MB Whitwick, A Kis Acs Nano 7 (4), 3729-3729, 2013 | 21 | 2013 |
| Semiconductor device JY Kim, KL Wang, Y Park, J Han, AJ Hong US Patent 8,164,134, 2012 | 13 | 2012 |
| Response to comment" Measurement of mobility in dual-gated MoS2 transistors" B Radisavljevic, A Kis arXiv preprint arXiv:1301.4945, 2013 | 3 | 2013 |
| Addendum: Small-signal amplifier based on single-layer MoS2 [Appl. Phys. Lett. 101, 043103 (2012)] B Radisavljevic, MB Whitwick, A Kis Applied Physics Letters 102 (5), 059901, 2013 | 2 | 2013 |
| System for optical fiber strain measure M Dabbicco, G Scamarcio, S Ottonelli, A Intermite, B Radisavljevic US Patent 8,234,081, 2012 | 2 | 2012 |
| MoS2-based devices and circuits B Radisavljevic, D Krasnozhon, MB Whitwick, A Kis 70th Device Research Conference, 179-180, 2012 | 2 | 2012 |
| Semiconductor device C Yi, C Chia-Hua, L Yueh-Chin, C Yu-Kong, S Ting-En | | 2014 |
| Small-signal amplifier based on single-layer MoS2 (vol 101, 043103, 2012) B Radisavljevic, MB Whitwick, A Kis Applied Physics Letters 102 (ARTICLE), 2013 | | 2013 |
| Single-layer MoS₂ B Radisavljevic EPFL, 2013 | | 2013 |
| Integrated circuits and logic operations with high room temperature voltage gain based on single-layer MoS2 A Kis, B Radisavljevic, M Whitwick APS 2012, Z17. 003, 2012 | | 2012 |
| Semiconductor device A Kis, B Radisavljevic | | 2012 |
