Branimir Radisavljevic
Branimir Radisavljevic
Scientist at ABB Corporate Research
Verified email at ch.abb.com
Title
Cited by
Cited by
Year
Single-layer MoS 2 transistors
B Radisavljevic, A Radenovic, J Brivio, V Giacometti, A Kis
Nature nanotechnology 6 (3), 147-150, 2011
113332011
Mobility engineering and metal-insulator transition in monolayer MoS2
B Radisavljevic, A Kis
Nature Materials 12, 815-820, 2013
13562013
Integrated Circuits and Logic Operations Based on Single-Layer MoS2
B Radisavljevic, MB Whitwick, A Kis
ACS nano 5 (12), 9934-9938, 2011
12102011
Visibility of dichalcogenide nanolayers
MM Benameur, B Radisavljevic, JS Héron, S Sahoo, H Berger, A Kis
Nanotechnology 22 (12), 125706, 2011
4732011
Small-signal amplifier based on single-layer MoS2
B Radisavljevic, MB Whitwick, A Kis
Applied Physics Letters 101 (4), 043103, 2012
2112012
i. V. Giacometti and A. Kis
B Radisavljevic, A Radenovic, J Brivio
Nat. Nanotechnol 6 (3), 147-150, 2011
2012011
Reply to'Measurement of mobility in dual-gated MoS 2 transistors'
B Radisavljevic, A Kis
Nature nanotechnology 8 (3), 147-148, 2013
1012013
ACS Nano 5, 9934 (2011)
B Radisavljevic, MB Whitwick, A Kis
591936
Semiconductor device
A Kis, B Radisavljevic
US Patent 9,608,101, 2017
582017
Correction to Integrated Circuits and Logic Operations Based on Single-Layer MoS2
B Radisavljevic, MB Whitwick, A Kis
Acs Nano 7 (4), 3729-3729, 2013
212013
Semiconductor device
JY Kim, KL Wang, Y Park, J Han, AJ Hong
US Patent 8,164,134, 2012
132012
Response to comment" Measurement of mobility in dual-gated MoS2 transistors"
B Radisavljevic, A Kis
arXiv preprint arXiv:1301.4945, 2013
32013
Addendum: Small-signal amplifier based on single-layer MoS2 [Appl. Phys. Lett. 101, 043103 (2012)]
B Radisavljevic, MB Whitwick, A Kis
Applied Physics Letters 102 (5), 059901, 2013
22013
System for optical fiber strain measure
M Dabbicco, G Scamarcio, S Ottonelli, A Intermite, B Radisavljevic
US Patent 8,234,081, 2012
22012
MoS2-based devices and circuits
B Radisavljevic, D Krasnozhon, MB Whitwick, A Kis
70th Device Research Conference, 179-180, 2012
22012
Semiconductor device
C Yi, C Chia-Hua, L Yueh-Chin, C Yu-Kong, S Ting-En
2014
Small-signal amplifier based on single-layer MoS2 (vol 101, 043103, 2012)
B Radisavljevic, MB Whitwick, A Kis
Applied Physics Letters 102 (ARTICLE), 2013
2013
Single-layer MoS₂
B Radisavljevic
EPFL, 2013
2013
Integrated circuits and logic operations with high room temperature voltage gain based on single-layer MoS2
A Kis, B Radisavljevic, M Whitwick
APS 2012, Z17. 003, 2012
2012
Semiconductor device
A Kis, B Radisavljevic
2012
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