| Electrical and photoelectrical properties of isotype N+‐GaSb/n0‐GaInAsSb/N+‐GaAlAsSb double heterojunctions MA Afrailov, M Ozer physica status solidi (c) 2 (4), 1393-1398, 2005 | 3 | 2005 |
| The determination of series resistance and interface state density distributions of Au/p-type GaAs Schottky barrier diodes A Asimov, M AHMETOGLU, B Kucur, M ÖZER, T GÜZEL Optoelectronics and Advanced Materials-Rapid Communications 7 (July-August …, 2013 | | 2013 |
| Photoelectrical properties of InP-InGaAsP heterojunction avalanche photodiodes M Ahmetoglu, M Ozer, O Kadirov Optoelectronics and Advanced Materials-Rapid Communications 3 (June 2009 …, 2009 | | 2009 |
| Electrical, structural and morphological properties of Ni/n-Si contacts M Ozer, SK Akay, A Peksoz, K Erturk, G Kaynak Optoelectronics and Advanced Materials-Rapid Communications 3 (May 2009 …, 2009 | | 2009 |
| Photoelectrical characteristic of isotype N+-GaSb/no-GaInAsSb/N+-GaAlAsSb type II heterojunctions M AHMETOĞLU, M ÖZER, O Kadirov, SR Boydedayev Journal of Optoelectronics and Advanced Materials 10 (10), 2008 | | 2008 |
| Dark currents and impact ionization coefficients in the InP-InGaAsP double heterostructures M Ozer, M Ahmetoglu, N Aprailov International Journal of Modern Physics B 20 (29), 4929-4936, 2006 | | 2006 |
| Dark current analysis of isotype N-GaSb/n-GaInAsSb single heterojunctions MA Afrailov, M Ozer, E Pylycer ROMANIAN JOURNAL OF PHYSICS 48 (1/4), 197, 2003 | | 2003 |
