Benjamin Grisafe
Benjamin Grisafe
Verified email at nd.edu
Title
Cited by
Cited by
Year
SoC logic compatible multi-bit FeMFET weight cell for neuromorphic applications
K Ni, JA Smith, B Grisafe, T Rakshit, B Obradovic, JA Kittl, M Rodder, ...
2018 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2018
502018
Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs
N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ...
2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016
372016
Fundamental understanding and control of device-to-device variation in deeply scaled ferroelectric FETs
K Ni, W Chakraborty, J Smith, B Grisafe, S Datta
2019 Symposium on VLSI Technology, T40-T41, 2019
292019
Ultra-low power probabilistic IMT neurons for stochastic sampling machines
M Jerry, A Parihar, B Grisafe, A Raychowdhury, S Datta
2017 Symposium on VLSI Technology, T186-T187, 2017
292017
Two-dimensional tantalum disulfide: controlling structure and properties via synthesis
R Zhao, B Grisafe, RK Ghosh, S Holoviak, B Wang, K Wang, N Briggs, ...
2D Materials 5 (2), 025001, 2018
282018
Plasmonics-based detection of H2 and CO: discrimination between reducing gases facilitated by material control
G Dharmalingam, NA Joy, B Grisafe, MA Carpenter
Beilstein journal of nanotechnology 3 (1), 712-721, 2012
282012
Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6and Ge/Ge0.93Sn0.07hetero-junction tunnel FETs
R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2016
272016
Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors
C Schulte-Braucks, R Pandey, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
IEEE Transactions on Electron Devices 64 (10), 4354-4362, 2017
252017
Programmable coupled oscillators for synchronized locomotion
S Dutta, A Parihar, A Khanna, J Gomez, W Chakraborty, M Jerry, B Grisafe, ...
Nature communications 10 (1), 1-10, 2019
242019
Back-end-of-line compatible transistors for monolithic 3-D integration
S Datta, S Dutta, B Grisafe, J Smith, S Srinivasa, H Ye
IEEE Micro 39 (6), 8-15, 2019
232019
Fundamental mechanism behind volatile and non-volatile switching in metallic conducting bridge RAM
N Shukla, RK Ghosh, B Grisafe, S Datta
2017 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2017
222017
In-memory computing primitive for sensor data fusion in 28 nm HKMG FeFET technology
K Ni, B Grisafe, W Chakraborty, AK Saha, S Dutta, M Jerry, JA Smith, ...
2018 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2018
212018
Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors
B Grisafe, M Jerry, JA Smith, S Datta
IEEE Electron Device Letters 40 (10), 1602-1605, 2019
132019
Electrically triggered insulator-to-metal phase transition in two-dimensional (2D) heterostructures
B Grisafe, R Zhao, RK Ghosh, JA Robinson, S Datta
Applied Physics Letters 113 (14), 142101, 2018
122018
Fully transparent field-effect transistor with high drain current and on-off ratio
J Park, H Paik, K Nomoto, K Lee, BE Park, B Grisafe, LC Wang, ...
APL Materials 8 (1), 011110, 2020
112020
Characterization of magnetic Ni clusters on graphene scaffold after high vacuum annealing
Z Zhang, A Matsubayashi, B Grisafe, JU Lee, JR Lloyd
Materials Chemistry and Physics 170, 175-179, 2016
102016
Monolithic 3D integration of high endurance multi-bit ferroelectric FET for accelerating compute-in-memory
S Dutta, H Ye, W Chakraborty, YC Luo, M San Jose, B Grisafe, A Khanna, ...
2020 IEEE International Electron Devices Meeting (IEDM), 36.4. 1-36.4. 4, 2020
92020
A novel ferroelectric superlattice based multi-level cell non-volatile memory
K Ni, J Smith, H Ye, B Grisafe, GB Rayner, A Kummel, S Datta
2019 IEEE International Electron Devices Meeting (IEDM), 28.8. 1-28.8. 4, 2019
92019
BEOL compatible dual-gate ultra-thin-body W-doped indium-oxide transistor with ION= SS= 73mV/dec and Ion/IOFF ratio> 4x10 9
W Chakraborty, B Grisafe, H Ye, I Lightcap, K Ni
Proc. Symp. VLSI Technol., Jun., TS2-1, 2020
72020
Hysteresis-free negative capacitance in the multi-domain scenario for logic applications
J Gomez, S Dutta, K Ni, JA Smith, B Grisafe, A Khan, S Datta
2019 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2019
72019
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