Temperature-dependent current–voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height FE Cimilli, M Sağlam, H Efeoğlu, A Türüt Physica B: Condensed Matter 404 (8-11), 1558-1562, 2009 | 71 | 2009 |
Experimental determination of the laterally homogeneous barrier height of Au/n-Si Schottky barrier diodes M Sağlam, FE Cimilli, A Türüt Physica B: Condensed Matter 348 (1-4), 397-403, 2004 | 50 | 2004 |
Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes FE Cimilli, M Sağlam, A Türüt Semiconductor science and technology 22 (8), 851, 2007 | 42 | 2007 |
Temperature-dependent current–voltage and capacitance–voltage characteristics of the Ag/n-InP/In Schottky diodes FE Cimilli, H Efeoğlu, M Sağlam, A Türüt Journal of Materials Science: Materials in Electronics 20 (2), 105-112, 2009 | 41 | 2009 |
γ-Irradiation-induced changes at the electrical characteristics of Sn/p–Si Schottky contacts Ö Güllü, F Demir, FE Cimilli, M Biber Vacuum 82 (8), 789-793, 2008 | 35 | 2008 |
The effect of hydrostatic pressure on the electrical characterization of Au/n-InP Schottky diodes N Uçar, AF Ozdemir, DA Aldemir, S Çakmak, A Calik, H Yildiz, F Cimilli Superlattices and Microstructures 47 (5), 586-591, 2010 | 18 | 2010 |
Properties of a facile growth of spray pyrolysis-based rGO films and device performance for Au/rGO/n-InP Schottky diodes FE CİMİLLİ ÇATIR Journal of Materials Science: Materials in Electronics 32, 611-622, 2021 | 11 | 2021 |
Fabrication and characterization of Au/n-type InP Schottky barrier diode with monolayer graphene interlayer FEC Çatır Semiconductor Science and Technology 35 (3), 035023, 2020 | 7 | 2020 |
Annealing effect on IV and CV characteristics of Al/n-InP Schottky diodes at low temperatures FEC Çatır, M Sağlam Materials Today: Proceedings 46, 6979-6985, 2021 | 6 | 2021 |
The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method FE Cimilli Çatır physica status solidi (a) 217 (19), 2000125, 2020 | 3 | 2020 |
Electronic Properties of FLG/InP Schottky Contacts FEC Çatır, M Gülnahar Avrupa Bilim ve Teknoloji Dergisi, 6-11, 2023 | 2 | 2023 |
Grafen oksitin modifiye Hummers yöntemi ile sentezi ve film olarak Al/GO/n-InP diyot performansına etkileri FEC Çatır Gümüşhane Üniversitesi Fen Bilimleri Dergisi 11 (1), 235-244, 2020 | 2 | 2020 |
The Structural, Optical, and Electrical Characterization of Ti/n-InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method FEC Catir PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 217 (19), 2020 | | 2020 |
The Relation Between the Ideality Factors and the Barrier Heights of Au/n-Inp Schottky Diodes FEC Catir | | 2007 |
Aynı şartlar altında hazırlanmış Au/n-Si/Au-Sb MIS Schottky diyotların idealite faktörleri ile engel yükseklikleri arasındaki ilişki FE Cimilli Fen Bilimleri Enstitüsü, 0 | | |
Cu/n-InP/In Schottky Diyotların Sıcaklığa Bağlı Akım-Voltaj ve Kapasite-Voltaj Ölçümlerinden Elde Edilen Karakteristik Parametrelerinin İncelenmesi FEC Çatır Erzincan University Journal of Science and Technology 11 (3), 381-393, 0 | | |