Fatih Akyol
Title
Cited by
Cited by
Year
Polarization-engineered GaN/InGaN/GaN tunnel diodes
S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan
Applied Physics Letters 97 (20), 203502, 2010
1592010
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan
Applied Physics Letters 100 (11), 111118, 2012
1352012
Low resistance GaN/InGaN/GaN tunnel junctions
S Krishnamoorthy, F Akyol, PS Park, S Rajan
Applied Physics Letters 102 (11), 113503, 2013
1282013
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
J Zuniga-Perez, V Consonni, L Lymperakis, X Kong, A Trampert, ...
Applied Physics Reviews 3 (4), 041303, 2016
892016
Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop
F Akyol, S Krishnamoorthy, S Rajan
Applied Physics Letters 103 (8), 081107, 2013
832013
N-polar III–nitride green (540 nm) light emitting diode
F Akyol, DN Nath, E Gür, PS Park, S Rajan
Japanese Journal of Applied Physics 50 (5R), 052101, 2011
782011
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 141103, 2015
742015
InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
S Krishnamoorthy, F Akyol, S Rajan
Applied Physics Letters 105 (14), 141104, 2014
662014
AlGaN channel field effect transistors with graded heterostructure ohmic contacts
S Bajaj, F Akyol, S Krishnamoorthy, Y Zhang, S Rajan
Applied Physics Letters 109 (13), 133508, 2016
602016
Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage
S Bajaj, TH Hung, F Akyol, D Nath, S Rajan
Applied Physics Letters 105 (26), 263503, 2014
582014
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ...
Applied Physics Letters 107 (15), 153504, 2015
572015
Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance
F Akyol, S Krishnamoorthy, Y Zhang, J Johnson, J Hwang, S Rajan
Applied Physics Letters 108 (13), 131103, 2016
512016
Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (12), 121102, 2016
492016
High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm
S Bajaj, A Allerman, A Armstrong, T Razzak, V Talesara, W Sun, SH Sohel, ...
IEEE Electron Device Letters 39 (2), 256-259, 2017
482017
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ...
Applied Physics Letters 110 (20), 201102, 2017
482017
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 071107, 2018
442018
GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions
F Akyol, S Krishnamoorthy, Y Zhang, S Rajan
Applied Physics Express 8 (8), 082103, 2015
432015
Graded AlGaN channel transistors for improved current and power gain linearity
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
392017
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ...
Applied Physics Letters 111 (5), 051104, 2017
312017
Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (19), 191105, 2016
292016
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