Matthew J. Hollander
Matthew J. Hollander
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Contacting graphene
JA Robinson, M LaBella, M Zhu, M Hollander, R Kasarda, Z Hughes, ...
Applied Physics Letters 98, 053103, 2011
Tungsten Ditelluride: a layered semimetal
CH Lee, EC Silva, L Calderin, MAT Nguyen, MJ Hollander, B Bersch, ...
Scientific reports 5 (1), 1-8, 2015
Epitaxial graphene transistors: enhancing performance via hydrogen intercalation
JA Robinson, M Hollander, M LaBella III, KA Trumbull, R Cavalero, ...
Nano letters 11 (9), 3875-3880, 2011
Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition
MA Fanton, JA Robinson, C Puls, Y Liu, MJ Hollander, BE Weiland, ...
Acs Nano 5 (10), 8062-8069, 2011
Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices
MS Bresnehan, MJ Hollander, M Wetherington, M LaBella, KA Trumbull, ...
ACS nano 6 (6), 5234-5241, 2012
Electrically Driven Reversible Insulator–Metal Phase Transition in 1T-TaS2
MJ Hollander, Y Liu, WJ Lu, LJ Li, YP Sun, JA Robinson, S Datta
Nano letters 15 (3), 1861-1866, 2015
Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene
MJ Hollander, M LaBella, ZR Hughes, M Zhu, KA Trumbull, R Cavalero, ...
Nano letters 11 (9), 3601-3607, 2011
Prospects of direct growth boron nitride films as substrates for graphene electronics
MS Bresnehan, MJ Hollander, M Wetherington, K Wang, T Miyagi, ...
Journal of Materials Research 29 (3), 459-471, 2014
Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices
Z Wang, CP Puls, NE Staley, Y Zhang, A Todd, J Xu, CA Howsare, ...
Physica E: Low-dimensional Systems and Nanostructures 44 (2), 521-524, 2011
Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for …
R Pandey, H Madan, H Liu, V Chobpattana, M Barth, B Rajamohanan, ...
2015 Symposium on VLSI Technology (VLSI Technology), T206-T207, 2015
Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC (0001)
JA Robinson, KA Trumbull, M LaBella III, R Cavalero, MJ Hollander, ...
Applied Physics Letters 98 (22), 222109, 2011
Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide
H Madan, MJ Hollander, M LaBella, R Cavalero, D Snyder, JA Robinson, ...
2012 International Electron Devices Meeting, 4.3. 1-4.3. 4, 2012
Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors
B Rajamohanan, D Mohata, Y Zhu, M Hudait, Z Jiang, M Hollander, ...
Journal of Applied Physics 115 (4), 044502, 2014
Chicken E. Nonparametric Statistical Methods
M Hollander, DA Wolfe
John Wiley & Sons, Inc., Hoboken, NJ, USA, third edn., doi 10, 9781119196037, 2013
Heterogeneous integration of hexagonal boron nitride on bilayer quasi‐free‐standing epitaxial graphene and its impact on electrical transport properties
MJ Hollander, A Agrawal, MS Bresnehan, M LaBella, KA Trumbull, ...
physica status solidi (a) 210 (6), 1062-1070, 2013
A distribution free test for ordered alternatives (Jonckheere, Terpstra) In: Nonparametric Statistical Methods
M Hollander, DA Wolfe
New York, John Wiley and Sons, 1999
Process–structure–property relations of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD)
DA Grave, ZR Hughes, JA Robinson, TP Medill, MJ Hollander, AL Stump, ...
Surface and Coatings Technology 206 (13), 3094-3103, 2012
Non-pmmetric Statistical Methods
M Hollander, DA Wolfe
John Wiley & Sons, New York, 1972
DA & CHICKEN, E. 2013
M Hollander, D Wolfe
Nonparametric statistical methods 751, 0
Short-channel graphene nanoribbon transistors with enhanced symmetry between p-and n-branches
MJ Hollander, H Madan, N Shukla, DA Snyder, JA Robinson, S Datta
Applied Physics Express 7 (5), 055103, 2014
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