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Dae-Young Um (엄대영)
Dae-Young Um (엄대영)
Research Professor, Division of Advanced Materials Engineering, Jeonbuk National University (JBNU)
Verified email at jbnu.ac.kr - Homepage
Title
Cited by
Cited by
Year
III-nitride nanowires for solar light harvesting: A review
U Chatterjee, JH Park, DY Um, CR Lee
Renewable and Sustainable Energy Reviews 79, 1002-1015, 2017
462017
Ultraviolet-C photodetector fabricated using Si-doped n-AlGaN nanorods grown by MOCVD
S Kang, U Chatterjee, DY Um, YT Yu, IS Seo, CR Lee
ACS Photonics 4 (10), 2595-2603, 2017
352017
A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure
JH Park, R Nandi, JK Sim, DY Um, S Kang, JS Kim, CR Lee
RSC advances 8 (37), 20585-20592, 2018
212018
Improvement in the performance of CIGS solar cells by introducing GaN nanowires on the absorber layer
JK Sim, DY Um, JW Kim, JS Kim, KU Jeong, CR Lee
Journal of Alloys and Compounds 779, 643-647, 2019
112019
Demonstration of n-GaN: Si NWs having ultrahigh density and aspect ratio via a 3-step growth method using MOCVD
DY Um, A Mandal, DS Lee, JH Park, CR Lee
CrystEngComm 18 (3), 480-487, 2016
92016
Effects of growth temperatures on the characteristics of n-GaN nanorods–graphene hybrid structures
S Kang, A Mandal, JH Park, DY Um, JH Chu, SY Kwon, CR Lee
Journal of Alloys and Compounds 644, 808-813, 2015
92015
Fabrication of In x Ga 1− x N/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission
JH Park, A Mandal, DY Um, S Kang, D Lee, CR Lee
RSC Advances 5 (58), 47090-47097, 2015
82015
Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures
DY Um, YH Ra, JH Park, GE Hong, CR Lee
Nanoscale Advances 3 (17), 5036-5045, 2021
42021
Growth and characterization of n-AlGaN 1-D structures with varying Al composition using u-GaN seeds
S Kang, U Chatterjee, DY Um, IS Seo, CR Lee
Journal of Crystal Growth 480, 108-114, 2017
42017
The synthesis of hybrid nanostructure comprising star-shaped GaN nanowires and Si nanoworms
JH Park, U Chatterjee, S Kang, DY Um, CR Lee
RSC advances 7 (39), 24113-24121, 2017
42017
External catalyst-free InGaN photoelectrode for highly efficient energy conversion and H2 generation
DY Um, B Chandran, JK Oh, SU Kim, YT Yu, JH Park, CR Lee, YH Ra
Chemical Engineering Journal 472, 144997, 2023
32023
Sub-micron monolithic full-color nanorod LEDs on a single substrate
SU Kim, JK Oh, DY Um, B Chandran, CR Lee, YH Ra
IEEE Photonics Journal 15 (1), 1-5, 2023
22023
III-nitride nanowires for emissive display technology
V Vignesh, Y Wu, SU Kim, JK Oh, C Bagavath, DY Um, Z Mi, YH Ra
Journal of Information Display 25 (1), 13-59, 2024
12024
New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector
DY Um, B Chandran, JY Kim, JK Oh, SU Kim, JU An, CR Lee, YH Ra
Advanced Functional Materials 33 (40), 2306143, 2023
12023
Structural Engineering in a Microscale Laser Diode with InGaN Tunnel-Junction Nanorods
SU Kim, DY Um, JK Oh, B Chandran, CR Lee, YH Ra
ACS Photonics 10 (4), 1053-1059, 2023
12023
Direct Synthesis of MoSe2 Thin Films on SiO2/Si Using Selenization Process of Sputtered Molybdenum
DY Um, R Nandi, JH Yang, JS Kim, JW Kim, JH Park, CR Lee
Journal of Nanoelectronics and Optoelectronics 15 (5), 580-585, 2020
12020
Low-Leakage Current Core–Shell AlGaN Nanorod LED Device Operating in the Ultraviolet-B Band
JK Oh, DY Um, B Chandran, SU Kim, CR Lee, YH Ra
ACS Applied Materials & Interfaces, 2024
2024
A Comparative Study of Vertical and Horizontal p-Type InN Nanowires Grown by MOCVD for an Optoelectronic Application
JH Park, U Chatterjee, TS Jang, DY Um, S Kang, I Seo, CR Lee
Journal of Nanoelectronics and Optoelectronics 12 (10), 1141-1145, 2017
2017
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