III-nitride nanowires for solar light harvesting: A review U Chatterjee, JH Park, DY Um, CR Lee Renewable and Sustainable Energy Reviews 79, 1002-1015, 2017 | 46 | 2017 |
Ultraviolet-C photodetector fabricated using Si-doped n-AlGaN nanorods grown by MOCVD S Kang, U Chatterjee, DY Um, YT Yu, IS Seo, CR Lee ACS Photonics 4 (10), 2595-2603, 2017 | 35 | 2017 |
A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure JH Park, R Nandi, JK Sim, DY Um, S Kang, JS Kim, CR Lee RSC advances 8 (37), 20585-20592, 2018 | 21 | 2018 |
Improvement in the performance of CIGS solar cells by introducing GaN nanowires on the absorber layer JK Sim, DY Um, JW Kim, JS Kim, KU Jeong, CR Lee Journal of Alloys and Compounds 779, 643-647, 2019 | 11 | 2019 |
Demonstration of n-GaN: Si NWs having ultrahigh density and aspect ratio via a 3-step growth method using MOCVD DY Um, A Mandal, DS Lee, JH Park, CR Lee CrystEngComm 18 (3), 480-487, 2016 | 9 | 2016 |
Effects of growth temperatures on the characteristics of n-GaN nanorods–graphene hybrid structures S Kang, A Mandal, JH Park, DY Um, JH Chu, SY Kwon, CR Lee Journal of Alloys and Compounds 644, 808-813, 2015 | 9 | 2015 |
Fabrication of In x Ga 1− x N/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission JH Park, A Mandal, DY Um, S Kang, D Lee, CR Lee RSC Advances 5 (58), 47090-47097, 2015 | 8 | 2015 |
Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures DY Um, YH Ra, JH Park, GE Hong, CR Lee Nanoscale Advances 3 (17), 5036-5045, 2021 | 4 | 2021 |
Growth and characterization of n-AlGaN 1-D structures with varying Al composition using u-GaN seeds S Kang, U Chatterjee, DY Um, IS Seo, CR Lee Journal of Crystal Growth 480, 108-114, 2017 | 4 | 2017 |
The synthesis of hybrid nanostructure comprising star-shaped GaN nanowires and Si nanoworms JH Park, U Chatterjee, S Kang, DY Um, CR Lee RSC advances 7 (39), 24113-24121, 2017 | 4 | 2017 |
External catalyst-free InGaN photoelectrode for highly efficient energy conversion and H2 generation DY Um, B Chandran, JK Oh, SU Kim, YT Yu, JH Park, CR Lee, YH Ra Chemical Engineering Journal 472, 144997, 2023 | 3 | 2023 |
Sub-micron monolithic full-color nanorod LEDs on a single substrate SU Kim, JK Oh, DY Um, B Chandran, CR Lee, YH Ra IEEE Photonics Journal 15 (1), 1-5, 2023 | 2 | 2023 |
III-nitride nanowires for emissive display technology V Vignesh, Y Wu, SU Kim, JK Oh, C Bagavath, DY Um, Z Mi, YH Ra Journal of Information Display 25 (1), 13-59, 2024 | 1 | 2024 |
New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector DY Um, B Chandran, JY Kim, JK Oh, SU Kim, JU An, CR Lee, YH Ra Advanced Functional Materials 33 (40), 2306143, 2023 | 1 | 2023 |
Structural Engineering in a Microscale Laser Diode with InGaN Tunnel-Junction Nanorods SU Kim, DY Um, JK Oh, B Chandran, CR Lee, YH Ra ACS Photonics 10 (4), 1053-1059, 2023 | 1 | 2023 |
Direct Synthesis of MoSe2 Thin Films on SiO2/Si Using Selenization Process of Sputtered Molybdenum DY Um, R Nandi, JH Yang, JS Kim, JW Kim, JH Park, CR Lee Journal of Nanoelectronics and Optoelectronics 15 (5), 580-585, 2020 | 1 | 2020 |
Low-Leakage Current Core–Shell AlGaN Nanorod LED Device Operating in the Ultraviolet-B Band JK Oh, DY Um, B Chandran, SU Kim, CR Lee, YH Ra ACS Applied Materials & Interfaces, 2024 | | 2024 |
A Comparative Study of Vertical and Horizontal p-Type InN Nanowires Grown by MOCVD for an Optoelectronic Application JH Park, U Chatterjee, TS Jang, DY Um, S Kang, I Seo, CR Lee Journal of Nanoelectronics and Optoelectronics 12 (10), 1141-1145, 2017 | | 2017 |