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Kwang Hong Lee, KH Lee
Kwang Hong Lee, KH Lee
Nanyang Technological University, Singapore-Mit alliance for research and technology
Verified email at smart.mit.edu
Title
Cited by
Cited by
Year
Low-threshold optically pumped lasing in highly strained germanium nanowires
S Bao, D Kim, C Onwukaeme, S Gupta, K Saraswat, KH Lee, Y Kim, D Min, ...
Nature Communications 8 (1), 1845, 2017
1722017
Integration of III–V materials and Si-CMOS through double layer transfer process
KH Lee, S Bao, E Fitzgerald, CS Tan
Japanese Journal of Applied Physics 54 (3), 030209, 2015
982015
Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics
W Li, P Anantha, S Bao, KH Lee, X Guo, T Hu, L Zhang, H Wang, R Soref, ...
Applied physics letters 109 (24), 2016
922016
Electric field directed assembly of an InGaAs LED onto silicon circuitry
CF Edman, RB Swint, C Gurtner, RE Formosa, SD Roh, KE Lee, ...
IEEE Photonics Technology Letters 12 (9), 1198-1200, 2000
862000
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm
H Zhou, S Xu, Y Lin, YC Huang, B Son, Q Chen, X Guo, KH Lee, SCK Goh, ...
Optics express 28 (7), 10280-10293, 2020
842020
High-efficiency normal-incidence vertical pin photodetectors on a germanium-on-insulator platform
Y Lin, KH Lee, S Bao, X Guo, H Wang, J Michel, CS Tan
Photonics Research 5 (6), 702-709, 2017
692017
Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics
BW Jia, KH Tan, WK Loke, S Wicaksono, KH Lee, SF Yoon
ACS Photonics 5 (4), 1512-1520, 2018
632018
Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer
KH Lee, S Bao, GY Chong, YH Tan, EA Fitzgerald, CS Tan
Journal of Applied Physics 116 (10), 2014
622014
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber
KH Lee, A Jandl, YH Tan, EA Fitzgerald, CS Tan
Aip Advances 3 (9), 2013
612013
Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
KH Lee, S Bao, B Wang, C Wang, SF Yoon, J Michel, EA Fitzgerald, ...
AIP Advances 6 (2), 2016
592016
Sensitivity enhancement in grating coupled surface plasmon resonance by azimuthal control
F Romanato, KH Lee, HK Kang, G Ruffato, CC Wong
Optics express 17 (14), 12145-12154, 2009
592009
Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient
KH Lee, S Bao, GY Chong, YH Tan, EA Fitzgerald, CS Tan
APL Materials 3 (1), 2015
582015
Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
KH Lee, S Bao, L Zhang, D Kohen, E Fitzgerald, CS Tan
Applied Physics Express 9 (8), 086501, 2016
522016
Little-parks oscillations in an insulator
G Kopnov, O Cohen, M Ovadia, KH Lee, CC Wong, D Shahar
Physical review letters 109 (16), 167002, 2012
492012
A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers
S Bao, Y Wang, K Lina, L Zhang, B Wang, WA Sasangka, KEK Lee, ...
Journal of Semiconductors 42 (2), 023106, 2021
482021
Dark current analysis of germanium-on-insulator vertical pin photodetectors with varying threading dislocation density
B Son, Y Lin, KH Lee, Q Chen, CS Tan
Journal of Applied Physics 127 (20), 2020
432020
Method of manufacturing a substrate
KH Lee, CS Tan, EA Fitzgerald, EKK Lee
US Patent 10,049,947, 2018
432018
The role of polarization on surface plasmon polariton excitation on metallic gratings in the conical mounting
F Romanato, KH Lee, G Ruffato, CC Wong
Applied Physics Letters 96 (11), 2010
432010
GeSn-on-insulator substrate formed by direct wafer bonding
D Lei, KH Lee, S Bao, W Wang, B Wang, X Gong, CS Tan, YC Yeo
Applied Physics Letters 109 (2), 2016
422016
Comparative studies of the growth and characterization of germanium epitaxial film on silicon (001) with 0° and 6° offcut
KH Lee, YH Tan, A Jandl, EA Fitzgerald, CS Tan
Journal of electronic materials 42, 1133-1139, 2013
422013
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Articles 1–20