Aaron Oki
Aaron Oki
Verified email at ngc.com
Title
Cited by
Cited by
Year
GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications
ME Kim, AK Oki, GM Gorman, DK Umemoto, JB Camou
IEEE Transactions on Microwave Theory and Techniques 37 (9), 1286-1303, 1989
1651989
A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth
KW Kobayashi, AK Oki, LT Tran, JC Cowles, A Gutierrez-Aitken, ...
IEEE Journal of Solid-State Circuits 34 (9), 1225-1232, 1999
1561999
A 6-GHz integrated phase-locked loop using AlGaAs/GaAs heterojunction bipolar transistors
AW Buchwald, KW Martin, AK Oki, KW Kobayashi
IEEE journal of solid-state circuits 27 (12), 1752-1762, 1992
1021992
Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting
YC Chou, D Leung, I Smorchkova, M Wojtowicz, R Grundbacher, ...
Microelectronics Reliability 44 (7), 1033-1038, 2004
1002004
A novel HBT distributed amplifier design topology based on attenuation compensation techniques
KW Kobayashi, R Esfandiari, AK Oki
IEEE transactions on microwave theory and techniques 42 (12), 2583-2589, 1994
971994
Reliability analysis of GaAs/AlGaAs HBTs under forward current/temperature stress
ME Hafizi, LM Pawlowicz, LT Tran, DK Umemoto, DC Streit, AK Oki, ...
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC), 329-332, 1990
811990
Ultrahigh-speed direct digital synthesizer using InP DHBT technology
A Gutierrez-Aitken, J Matsui, EN Kaneshiro, BK Oyama, D Sawdai, AK Oki, ...
IEEE Journal of Solid-State Circuits 37 (9), 1115-1119, 2002
782002
Ultra-low dc power GaAs HBT S-and C-band low noise amplifiers for portable wireless applications
KW Kobayashi, AK Oki, LT Tran, DC Streit
IEEE Transactions on Microwave Theory and Techniques 43 (12), 3055-3061, 1995
741995
Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology
H Wang, KW Chang, LT Tran, JC Cowles, TR Block, EW Lin, GS Dow, ...
IEEE Journal of Solid-State Circuits 31 (10), 1419-1425, 1996
711996
12-40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors
ME Kim, AK Oki, JB Camou, PD Chow, BL Nelson, DM Smith, JC Canyon, ...
10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit …, 1988
691988
A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA amplifier with multi-octave bandwidth from 0.2-8 GHz
KW Kobayashi, YC Chen, I Smorchkova, R Tsai, M Wojtowicz, A Oki
2007 IEEE/MTT-S International Microwave Symposium, 619-622, 2007
682007
High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts
DC Streit, AK Oki, DK Umemoto, JR Velebir, KS Stolt, FM Yamada, Y Saito, ...
IEEE electron device letters 12 (9), 471-473, 1991
641991
A 50-MHz-55-GHz multidecade InP-based HBT distributed amplifier
KW Kobayashi, J Cowles, LT Tran, A Gutierrez-Aitken, TR Block, AK Oki, ...
IEEE Microwave and Guided Wave Letters 7 (10), 353-355, 1997
601997
A 1–25 GHz GaN HEMT MMIC low-noise amplifier
M Chen, W Sutton, I Smorchkova, B Heying, WB Luo, V Gambin, F Oshita, ...
IEEE Microwave and Wireless Components Letters 20 (10), 563-565, 2010
572010
Multi-decade GaN HEMT cascode-distributed power amplifier with baseband performance
KW Kobayashi, Y Chen, I Smorchkova, B Heying, WB Luo, W Sutton, ...
2009 IEEE Radio Frequency Integrated Circuits Symposium, 369-372, 2009
572009
A 50 MHz-30 GHz broadband co-planar waveguide SPDT PIN diode switch with 45-dB isolation
KW Kobayashi, L Tran, AK Oki, DC Streit
IEEE Microwave and Guided wave letters 5 (2), 56-58, 1995
571995
GaAs HBT wideband matrix distributed and Darlington feedback amplifiers to 24 GHz
KW Kobayashi, R Esfandiari, ME Hafizi, DC Streit, AK Oki, LT Tran, ...
IEEE Transactions on Microwave Theory and Techniques 39 (12), 2001-2009, 1991
561991
Monolithic GaAs HBT pin diode variable gain amplifiers, attenuators, and switches
KW Kobayashi, AK Oki, DK Umemoto, SKZ Claxton, DC Streit
IEEE transactions on microwave theory and techniques 41 (12), 2295-2302, 1993
501993
0.1/spl mu/m InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band
R Grundbacher, R Lai, M Barsky, R Tsai, T Gaier, S Weinreb, D Dawson, ...
Conference Proceedings. 14th Indium Phosphide and Related Materials …, 2002
482002
Monolithic HEMT-HBT integration by selective MBE
DC Streit, DK Umemoto, KW Kobayashi, AK Oki
IEEE transactions on electron devices 42 (4), 618-623, 1995
481995
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