Craig A. Fisher
Craig A. Fisher
MaxPower Semiconductor
Verified email at maxpowersemi.com
Title
Cited by
Cited by
Year
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 223704, 2013
682013
An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation
S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ...
IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014
662014
An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains
S Jahdi, O Alatise, C Fisher, L Ran, P Mawby
IEEE Journal of emerging and selected topics in Power Electronics 2 (3), 517-528, 2014
562014
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
SAO Russell, A Pérez-Tomás, CF McConville, CA Fisher, DP Hamilton, ...
IEEE Journal of the Electron Devices Society 5 (4), 256-261, 2017
282017
Enhanced field effect mobility on 4H-SiC by oxidation at 1500 C
SM Thomas, YK Sharma, MA Crouch, CA Fisher, A Perez-Tomas, ...
IEEE Journal of the Electron Devices Society 2 (5), 114-117, 2014
282014
Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors
SM Thomas, MR Jennings, YK Sharma, CA Fisher, PA Mawby
Materials Science Forum 778, 599-602, 2014
272014
High-temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs
DP Hamilton, MR Jennings, A Pérez-Tomás, SAO Russell, SA Hindmarsh, ...
IEEE Transactions on Power Electronics 32 (10), 7967-7979, 2016
192016
On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts
MR Jennings, CA Fisher, D Walker, A Sanchez, A Pérez-Tomás, ...
Materials Science Forum 778, 693-696, 2014
192014
Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
A Fontsere, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Nanotechnology 23 (39), 395204, 2012
182012
On the Schottky barrier height lowering effect of Ti3SiC2 in ohmic contacts to P-Type 4H-SiC
CA Fisher, MR Jennings, YK Sharma, A Sanchez-Fuentes, D Walker, ...
International Journal of Fundamental Physical Sciences 4 (3), 95-100, 2014
142014
Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process
CA Fisher, MR Jennings, YK Sharma, DP Hamilton, PM Gammon, ...
IEEE Transactions on Semiconductor Manufacturing 27 (3), 443-451, 2014
132014
A study of temperature-related non-linearity at the metal-silicon interface
PM Gammon, E Donchev, A Pérez-Tomás, VA Shah, JS Pang, PK Petrov, ...
Journal of Applied Physics 112 (11), 114513, 2012
132012
High-temperature (1200–1400° C) dry oxidation of 3C-SiC on silicon
YK Sharma, F Li, MR Jennings, CA Fisher, A Pérez-Tomás, S Thomas, ...
Journal of Electronic Materials 44 (11), 4167-4174, 2015
122015
3C-SiC transistor with ohmic contacts defined at room temperature
F Li, Y Sharma, D Walker, S Hindmarsh, M Jennings, D Martin, C Fisher, ...
IEEE Electron Device Letters 37 (9), 1189-1192, 2016
112016
Electrical activation of nitrogen heavily implanted 3C-SiC (1 0 0)
F Li, Y Sharma, V Shah, M Jennings, A Pérez-Tomás, M Myronov, ...
Applied Surface Science 353, 958-963, 2015
82015
Evaluation of commercially available SiC devices and packaging materials for operation up to 350 C
D Hamilton, M Jennings, Y Sharma, C Fisher, O Alatise, P Mawby
2014 IEEE Energy Conversion Congress and Exposition (ECCE), 4381-4387, 2014
82014
Cryogenic characterization of commercial SiC Power MOSFETs
H Chen, PM Gammon, VA Shah, CA Fisher, CW Chan, S Jahdi, ...
Materials Science Forum 821, 777-780, 2015
72015
Improved stability of 4H SiC-MOS devices after phosphorous passivation with etching process
YK Sharma, Y Xu, MR Jennings, C Fisher, P Mawby, LC Feldman, ...
International Journal of Fundamental Physical Sciences (IJFPS) 4 (2), 37-42, 2014
72014
Defect control in out-of-autoclave manufacturing of structural elements
LK Grunenfelder, C Fisher, C Cabble, S Thomas, SR Nutt
Proceedings of the SAMPE 2012 Technical Conference, 2012
72012
Characteristics and aging of SiC MOSFETs operated at very high temperatures
DP Hamilton, MR Jennings, CA Fisher, YK Sharma, SJ York, PA Mawby
MRS Online Proceedings Library 1693 (1), 113-118, 2014
62014
The system can't perform the operation now. Try again later.
Articles 1–20