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Łukasz Janicki
Łukasz Janicki
Faculty of Fundamental Problems of Technology, Wroclaw University of Technology
Verified email at pwr.edu.pl
Title
Cited by
Cited by
Year
Beyond quantum efficiency limitations originating from the piezoelectric polarization in light-emitting devices
G Muziol, H Turski, M Siekacz, K Szkudlarek, L Janicki, M Baranowski, ...
Acs Photonics 6 (8), 1963-1971, 2019
372019
Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
R Kudrawiec, M Gladysiewicz, L Janicki, J Misiewicz, G Cywinski, ...
Applied Physics Letters 100 (18), 2012
322012
Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface
Ł Janicki, M Gładysiewicz, J Misiewicz, K Klosek, M Sobanska, ...
Applied Surface Science 396, 1657-1666, 2017
312017
Fermi level and bands offsets determination in insulating (Ga, Mn) N/GaN structures
L Janicki, G Kunert, M Sawicki, E Piskorska-Hommel, K Gas, R Jakiela, ...
Scientific Reports 7 (1), 41877, 2017
282017
Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method
M Rudziński, R Kudrawiec, L Janicki, J Serafinczuk, R Kucharski, M Zając, ...
Journal of crystal growth 328 (1), 5-12, 2011
262011
Contactless electroreflectance studies of surface potential barrier for N-and Ga-face epilayers grown by molecular beam epitaxy
R Kudrawiec, L Janicki, M Gladysiewicz, J Misiewicz, G Cywinski, ...
Applied Physics Letters 103 (5), 2013
212013
Transparency of semi-insulating, n-type, and p-type ammonothermal GaN substrates in the near-infrared, mid-infrared, and THz spectral range
R Kucharski, Ł Janicki, M Zajac, M Welna, M Motyka, C Skierbiszewski, ...
Crystals 7 (7), 187, 2017
182017
Zn acceptor position in GaN: Zn probed by contactless electroreflectance spectroscopy
Ł Janicki, MS Mohajerani, J Hartmann, E Zdanowicz, HH Wehmann, ...
Applied Physics Letters 113 (3), 2018
132018
Engineering of electric field distribution in GaN (cap)/AlGaN/GaN heterostructures: theoretical and experimental studies
M Gladysiewicz, L Janicki, J Misiewicz, M Sobanska, K Klosek, ...
Journal of Physics D: Applied Physics 49 (34), 345106, 2016
132016
Determination of Fermi level position at the graphene/GaN Interface using electromodulation spectroscopy
AP Herman, L Janicki, HS Stokowski, M Rudzinski, E Rozbiegala, ...
Advanced Materials Interfaces 7 (21), 2001220, 2020
122020
Growth of AlGaN/GaN heterostructure with lattice-matched AlIn (Ga) N back barrier
JG Kim, SH Kang, Ł Janicki, JH Lee, JM Ju, KW Kim, YS Lee, SH Lee, ...
Solid-State Electronics 152, 24-28, 2019
122019
Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures
M Gladysiewicz, L Janicki, M Siekacz, G Cywinski, C Skierbiszewski, ...
Applied Physics Letters 107 (26), 2015
122015
Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy
G Cywiński, R Kudrawiec, Ł Janicki, J Misiewicz, C Chèze, M Siekacz, ...
Journal of Vacuum Science & Technology B 31 (3), 2013
122013
Sensitivity of N-polar GaN surface barrier to ambient gases
Ł Janicki, J Misiewicz, M Siekacz, H Turski, J Moneta, S Gorantla, ...
Sensors and Actuators B: Chemical 281, 561-567, 2019
112019
Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy
R Oliva, SJ Zelewski, Ł Janicki, KR Gwóźdź, J Serafińczuk, M Rudziński, ...
Semiconductor Science and Technology 33 (3), 035007, 2018
112018
Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method
R Kudrawiec, M Rudziński, M Gladysiewicz, L Janicki, PR Hageman, ...
Journal of Applied Physics 109 (6), 2011
112011
Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m-plane GaN surfaces to vacuum and air ambient
Ł Janicki, M Ramírez-López, J Misiewicz, G Cywiński, M Boćkowski, ...
Japanese Journal of Applied Physics 55 (5S), 05FA08, 2016
92016
Thermal oxidation of [0001] GaN in water vapor compared with dry and wet oxidation: Oxide properties and impact on GaN
Ł Janicki, R Korbutowicz, M Rudziński, PP Michałowski, S Złotnik, ...
Applied Surface Science 598, 153872, 2022
62022
Electric fields and surface fermi level in undoped GaN/AlN two‐dimensional hole gas heterostructures
Ł Janicki, R Chaudhuri, SJ Bader, HG Xing, D Jena, R Kudrawiec
physica status solidi (RRL)–Rapid Research Letters 15 (4), 2000573, 2021
62021
Mask-free three-dimensional epitaxial growth of III-nitrides
M Rudziński, S Zlotnik, M Wójcik, J Gaca, Ł Janicki, R Kudrawiec
Journal of Materials Science 56, 558-569, 2021
52021
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