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Şemsettin ALTINDAL
Şemsettin ALTINDAL
Verified email at gazi.edu.tr - Homepage
Title
Cited by
Cited by
Year
Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si (1 0 0) Schottky contacts
Ş Karataş, Ş Altındal, A Türüt, A Özmen
Applied surface science 217 (1-4), 250-260, 2003
3062003
The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes
Ş Altındal, S Karadeniz, N Tuğluoğlu, A Tataroğlu
Solid-State Electronics 47 (10), 1847-1854, 2003
2562003
Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure
A Tataroglu, Ş Altındal, MM Bülbül
Microelectronic engineering 81 (1), 140-149, 2005
1902005
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
İ Dökme, Ş Altındal, T Tunç, İ Uslu
Microelectronics Reliability 50 (1), 39-44, 2010
1522010
Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures
S Zeyrek, Ş Altındal, H Yüzer, MM Bülbül
Applied Surface Science 252 (8), 2999-3010, 2006
1492006
Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements
Ş Karataş, Ş Altındal, A Türüt, M Çakar
Physica B: Condensed Matter 392 (1-2), 43-50, 2007
1432007
Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Al/SiO2/p-Si (MIS) Schottky diodes
A Tataroğlu, Ş Altındal
Microelectronic engineering 83 (3), 582-588, 2006
1432006
Frequency and voltage effects on the dielectric properties and electrical conductivity of Al–TiW–Pd2Si/n-Si structures
IM Afandiyeva, İ Dökme, Ş Altındal, MM Bülbül, A Tataroğlu
Microelectronic Engineering 85 (2), 247-252, 2008
1422008
The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range
Ş Altındal, İ Dökme, MM Bülbül, N Yalçın, T Serin
Microelectronic Engineering 83 (3), 499-505, 2006
1322006
Current transport in Zn/p-Si (1 0 0) Schottky barrier diodes at high temperatures
Ş Karataş, Ş Altındal, M Çakar
Physica B: Condensed Matter 357 (3-4), 386-397, 2005
1232005
Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes
M Özer, DE Yıldız, Ş Altındal, MM Bülbül
Solid-State Electronics 51 (6), 941-949, 2007
1212007
Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures
E Arslan, Ş Altındal, S Özçelik, E Ozbay
Journal of Applied Physics 105 (2), 2009
1152009
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
O Pakma, N Serin, T Serin, Ş Altındal
Journal of Applied Physics 104 (1), 2008
1152008
The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures
Ş Altındal, H Uslu
Journal of Applied Physics 109 (7), 2011
1132011
The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
İ Taşçıoğlu, U Aydemir, Ş Altındal
Journal of Applied Physics 108 (6), 2010
1102010
Analysis of I–V characteristics on Au/n-type GaAs Schottky structures in wide temperature range
Ş Karataş, Ş Altındal
Materials Science and Engineering: B 122 (2), 133-139, 2005
1092005
Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs (1 1 0) schottky barrier diodes
Y Şafak-Asar, T Asar, Ş Altındal, S Özçelik
Journal of Alloys and Compounds 628, 442-449, 2015
1072015
The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si Schottky diodes
H Kanbur, Ş Altındal, A Tataroğlu
applied surface science 252 (5), 1732-1738, 2005
1072005
Density of interface states, excess capacitance and series resistance in the metal–insulator–semiconductor (MIS) solar cells
Ş Altındal, A Tataroğlu, İ Dökme
Solar energy materials and solar cells 85 (3), 345-358, 2005
1072005
On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)
H Tecimer, H Uslu, ZA Alahmed, F Yakuphanoğlu, Ş Altındal
Composites Part B: Engineering 57, 25-30, 2014
1062014
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