Omor Shoron
Title
Cited by
Cited by
Year
Modulation of over 1014 cm−2 electrons in SrTiO3/GdTiO3 heterostructures
M Boucherit, O Shoron, CA Jackson, TA Cain, MLC Buffon, C Polchinski, ...
Applied Physics Letters 104 (18), 182904, 2014
502014
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ...
Applied Physics Letters 107 (15), 153504, 2015
432015
Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors
M Boucherit, OF Shoron, TA Cain, CA Jackson, S Stemmer, S Rajan
Applied Physics Letters 102 (24), 242909, 2013
422013
Electric field effect near the metal-insulator transition of a two-dimensional electron system in SrTiO3
K Ahadi, OF Shoron, PB Marshall, E Mikheev, S Stemmer
Applied Physics Letters 110 (6), 062104, 2017
222017
Probing the Metal-Insulator Transition in by Electrostatic Doping
S Raghavan, JY Zhang, OF Shoron, S Stemmer
Physical review letters 117 (3), 037602, 2016
222016
Two-dimensional Dirac fermions in thin films of
L Galletti, T Schumann, OF Shoron, M Goyal, DA Kealhofer, H Kim, ...
Physical Review B 97 (11), 115132, 2018
202018
Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors
S Arulkumaran, GI Ng, CM Manoj Kumar, K Ranjan, KL Teo, OF Shoron, ...
Applied Physics Letters 106 (5), 053502, 2015
202015
In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V
S Arulkumaran, GI Ng, CM Manojkumar, K Ranjan, KL Teo, OF Shoron, ...
2014 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2014
172014
BaTiO3/SrTiO3 heterostructures for ferroelectric field effect transistors
OF Shoron, S Raghavan, CR Freeze, S Stemmer
Applied Physics Letters 110 (23), 232902, 2017
112017
Electronic transport of titanate heterostructures and their potential as channels on (001) Si
L Kornblum, EN Jin, O Shoron, M Boucherit, S Rajan, CH Ahn, FJ Walker
Journal of Applied Physics 118 (10), 105301, 2015
112015
A simple physically based model of temperature effect on drain current for nanoscale TFET
OF Shoron, SA Siddiqui, A Zubair, QDM Khosru
2010 IEEE International Conference of Electron Devices and Solid-State …, 2010
42010
Impact of bandgap and effective mass on the transport characteristics of tunneling FET
A Zubair, SA Siddiqui, OF Shoron, QDM Khosru
2010 IEEE Nanotechnology Materials and Devices Conference, 47-51, 2010
42010
High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Field Effect Transistors
J Cheng, C Wang, C Freeze, O Shoron, N Combs, H Yang, NK Kalarickal, ...
IEEE Electron Device Letters 41 (4), 621-624, 2020
22020
Nanoscale etching of perovskite oxides for field effect transistor applications
J Cheng, H Yang, C Wang, N Combs, C Freeze, O Shoron, W Wu, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2020
22020
Field-effect transistors with the three-dimensional Dirac semimetal cadmium arsenide
OF Shoron, T Schumann, M Goyal, DA Kealhofer, S Stemmer
Applied Physics Letters 115 (6), 062101, 2019
22019
Modulation of over 1014cm−2electrons at the SrTiO3/GdTiO3 heterojunction
O Shoron, M Boucherit, CA Jackson, TA Cain, MLC Buffon, C Polchinski, ...
72nd Device Research Conference, 13-14, 2014
22014
SrTiO3/GdTiO3heterostructure field effect transistors
OF Shoron, M Boucherit, CA Jackson, P Moetakef, S Stemmer, S Rajan
71st Device Research Conference, 205-206, 2013
22013
Modulation of over 10 {sup 14} cm {sup− 2} electrons in SrTiO {sub 3}/GdTiO {sub 3} heterostructures
M Boucherit, O Shoron, C Polchinski, CA Jackson, TA Cain, MLC Buffon, ...
Applied Physics Letters 104 (18), 2014
12014
Modeling of temperature effect on threshold voltage of ballistic Ge tunneling FET
SA Siddiqui, A Zubair, OF Shoron, QDM Khosru
International Conference on Electrical & Computer Engineering (ICECE 2010 …, 2010
12010
Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide
OF Shoron, M Goyal, B Guo, DA Kealhofer, T Schumann, S Stemmer
Advanced Electronic Materials, 2000676, 2020
2020
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Articles 1–20