Growth of planar non-polar {1-1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) BM Imer, JS Speck, SP DenBaars, S Nakamura US Patent 7,338,828, 2008 | 293 | 2008 |
Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition MD Craven, F Wu, A Chakraborty, B Imer, UK Mishra, SP DenBaars, ... Applied Physics Letters 84 (8), 1281-1283, 2004 | 174 | 2004 |
Improved quality (112 0) a-plane GaN with sidewall lateral epitaxial overgrowth BM Imer, F Wu, SP DenBaars, JS Speck Applied Physics Letters 88 (6), 2006 | 158 | 2006 |
Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO) BM Imer, JS Speck, SP DenBaars US Patent 7,361,576, 2008 | 119 | 2008 |
Stability of (1100) m-plane GaN films grown by metalorganic chemical vapor deposition B Imer, F Wu, MD Craven, JS Speck, SP DenBaars Japanese journal of applied physics 45 (11R), 8644, 2006 | 67 | 2006 |
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy P Misra, U Behn, O Brandt, HT Grahn, B Imer, S Nakamura, SP DenBaars, ... Applied physics letters 88 (16), 2006 | 63 | 2006 |
Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire S Ghosh, P Misra, HT Grahn, B Imer, S Nakamura, SP DenBaars, ... Journal of applied physics 98 (2), 2005 | 62 | 2005 |
Growth evolution in sidewall lateral epitaxial overgrowth (SLEO) B Imer, F Wu, JS Speck, SP DenBaars Journal of crystal growth 306 (2), 330-338, 2007 | 52 | 2007 |
Growth of thick (112¯ 0) GaN using a metal interlayer PR Tavernier, B Imer, SP DenBaars, DR Clarke Applied physics letters 85 (20), 4630-4632, 2004 | 26 | 2004 |
Core/shell copper nanowire networks for transparent thin film heaters D Tigan, SP Genlik, B Imer, HE Unalan Nanotechnology 30 (32), 325202, 2019 | 23 | 2019 |
High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications A Navarro, C Rivera, J Pereiro, E Muñoz, B Imer, SP DenBaars, JS Speck Applied Physics Letters 94 (21), 2009 | 23 | 2009 |
Structural and electrical characterization of a‐plane GaN grown on a‐plane SiC MD Craven, A Chakraborty, B Imer, F Wu, S Keller, UK Mishra, JS Speck, ... physica status solidi (c), 2132-2135, 2003 | 19 | 2003 |
Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications H Çakmak, M Öztürk, E Özbay, B Imer IEEE Transactions on Electron Devices 68 (3), 1006-1010, 2021 | 15 | 2021 |
Intensity dependent time‐resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a‐plane and planar c‐plane GaN GA Garrett, H Shen, M Wraback, B Imer, B Haskell, JS Speck, S Keller, ... physica status solidi (a) 202 (5), 846-849, 2005 | 14 | 2005 |
Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) BM Imer, JS Speck, SP DenBaars, S Nakamura US Patent 8,097,481, 2012 | 11 | 2012 |
Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) B Imer, M Schmidt, B Haskell, S Rajan, B Zhong, K Kim, F Wu, T Mates, ... physica status solidi (a) 205 (7), 1705-1712, 2008 | 9 | 2008 |
Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy U Behn, P Misra, HT Grahn, B Imer, S Nakamura, SP DenBaars, JS Speck physica status solidi (a) 204 (1), 299-303, 2007 | 9 | 2007 |
Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) BM Imer, JS Speck, SP DenBaars US Patent 7,955,983, 2011 | 8 | 2011 |
Defect reduction of non-polar and semi-polar iii-nitrides with sidewall lateral epitaxial overgrowth (sleo) BM Imer, JS Speck, SP DenBaars US Patent App. 13/093,452, 2012 | 7 | 2012 |
Improved quality non-polar III-nitride heteroepitaxial films and devices B Imer University of California, Santa Barbara, 2006 | 4 | 2006 |