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Bilge İmer
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Growth of planar non-polar {1-1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)
BM Imer, JS Speck, SP Denbaars, S Nakamura
US Patent 7,338,828, 2008
2582008
Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition
MD Craven, F Wu, A Chakraborty, B Imer, UK Mishra, SP DenBaars, ...
Applied Physics Letters 84 (8), 1281-1283, 2004
1682004
Improved quality -plane GaN with sidewall lateral epitaxial overgrowth
BM Imer, F Wu, SP DenBaars, JS Speck
Applied Physics Letters 88 (6), 061908, 2006
1522006
Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO)
BM Imer, JS Speck, SP DenBaars
US Patent 7,361,576, 2008
1152008
Stability of (1100) m-plane GaN films grown by metalorganic chemical vapor deposition
B Imer, F Wu, MD Craven, JS Speck, SP DenBaars
Japanese journal of applied physics 45 (11R), 8644, 2006
632006
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
P Misra, U Behn, O Brandt, HT Grahn, B Imer, S Nakamura, SP DenBaars, ...
Applied physics letters 88 (16), 161920, 2006
632006
Polarized photoreflectance spectroscopy of strained -plane GaN films on -plane sapphire
S Ghosh, P Misra, HT Grahn, B Imer, S Nakamura, SP DenBaars, ...
Journal of applied physics 98 (2), 026105, 2005
592005
Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)
B Imer, F Wu, JS Speck, SP DenBaars
Journal of crystal growth 306 (2), 330-338, 2007
452007
Growth of thick GaN using a metal interlayer
PR Tavernier, B Imer, SP DenBaars, DR Clarke
Applied physics letters 85 (20), 4630-4632, 2004
242004
High responsivity -plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications
A Navarro, C Rivera, J Pereiro, E Muñoz, B Imer, SP DenBaars, JS Speck
Applied Physics Letters 94 (21), 213512, 2009
222009
Structural and electrical characterization of a‐plane GaN grown on a‐plane SiC
MD Craven, A Chakraborty, B Imer, F Wu, S Keller, UK Mishra, JS Speck, ...
physica status solidi (c), 2132-2135, 2003
182003
Core/shell copper nanowire networks for transparent thin film heaters
D Tigan, SP Genlik, B Imer, HE Unalan
Nanotechnology 30 (32), 325202, 2019
152019
Intensity dependent time‐resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a‐plane and planar c‐plane GaN
GA Garrett, H Shen, M Wraback, B Imer, B Haskell, JS Speck, S Keller, ...
physica status solidi (a) 202 (5), 846-849, 2005
142005
Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
BM Imer, JS Speck, SP Denbaars, S Nakamura
US Patent 8,097,481, 2012
102012
Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)
B Imer, M Schmidt, B Haskell, S Rajan, B Zhong, K Kim, F Wu, T Mates, ...
physica status solidi (a) 205 (7), 1705-1712, 2008
92008
Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy
U Behn, P Misra, HT Grahn, B Imer, S Nakamura, SP DenBaars, JS Speck
physica status solidi (a) 204 (1), 299-303, 2007
92007
Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
BM Imer, JS Speck, SP DenBaars
US Patent 7,955,983, 2011
82011
Defect reduction of non-polar and semi-polar iii-nitrides with sidewall lateral epitaxial overgrowth (sleo)
BM Imer, JS Speck, SP DenBaars
US Patent App. 13/093,452, 2012
72012
Improved quality non-polar III-nitride heteroepitaxial films and devices
B Imer
University of California, Santa Barbara, 2006
42006
Optical polarization anisotropy in strained A‐plane GaN films on R‐plane sapphire
S Ghosh, P Misra, HT Grahn, B Imer, S Nakamura, SP DenBaars, ...
physica status solidi (b) 243 (7), 1441-1445, 2006
32006
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