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nezir yildirim
nezir yildirim
Verified email at bingol.edu.tr
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Year
On temperature-dependent experimental and data of Schottky contacts
N Yıldırım, K Ejderha, A Turut
Journal of Applied Physics 108 (11), 114506, 2010
1262010
Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101∕ n-Si and Sn/rhodamine-101∕ p-Si Schottky barrier diodes
M Çakar, N Yıldırım, Ş Karataş, C Temirci, A Türüt
Journal of Applied Physics 100 (7), 074505, 2006
1202006
Temperature-dependent behavior of Ni/4 H-n SiC Schottky contacts
ME Aydın, N Yıldırım, A Türüt
Journal of Applied Physics 102 (4), 043701, 2007
1062007
Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode
Ş Karataş, N Yildirim, A Türüt
Superlattices and Microstructures 64, 483-494, 2013
732013
The conductance and capacitance–frequency characteristics of Au/pyronine-B/p-type Si/Al contacts
M Cakar, N Yıldırım, H Doğan, A Türüt
Applied Surface Science 253 (7), 3464-3468, 2007
702007
Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si
Ö Demircioglu, Ş Karataş, N Yıldırım, ÖF Bakkaloglu, A Türüt
Journal of Alloys and Compounds 509 (22), 6433-6439, 2011
622011
Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes
K Çınar, N Yıldırım, C Coşkun, A Turut
Journal of Applied Physics 106 (7), 2009
572009
Allelopathic effects of plants extracts on physiological and cytological processes during maize seed germination.
M Türker, P Battal, G Agar, M Güllüce, F Sahın, ME Erez, N Yıldırım
462008
Influence of interface states on the temperature dependence and current–voltage characteristics of Ni/p-InP Schottky diodes
K Ejderha, N Yıldırım, A Türüt, B Abay
Superlattices and Microstructures 47 (2), 241-252, 2010
442010
Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I–V characteristics in Co/p-InP contacts
K Ejderha, N Yıldırım, B Abay, A Turut
Journal of Alloys and Compounds 484 (1-2), 870-876, 2009
412009
Effects of temperature on series resistance determination of electrodeposited Cr/n-Si/Au–Sb Schottky structures
Ö Demircioglu, Ş Karataş, N Yıldırım, ÖF Bakkaloglu
Microelectronic engineering 88 (9), 2997-3002, 2011
402011
Temperature-dependent current–voltage characteristics of Cr/n-GaAs Schottky diodes
H Korkut, N Yildirim, A Turut
Microelectronic Engineering 86 (1), 111-116, 2009
392009
Thermally annealed Ni/n-GaAs (si)/In Schottky barrier diodes
H Doğan, N Yıldırım, A Turut
Microelectronic engineering 85 (4), 655-658, 2008
362008
Determination of the characteristic parameters of Sn/n-GaAs/Al–Ge Schottky diodes by a barrier height inhomogeneity model
H Doğan, N Yildirim, A Turut, M Biber, E Ayyildiz, Ç Nuhoğlu
Semiconductor Science and Technology 21 (6), 822, 2006
362006
Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts
T Göksu, N Yıldırım, H Korkut, AF Özdemir, A Turut, A Kökçe
Microelectronic Engineering 87 (9), 1781-1784, 2010
352010
Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures
H Doğan, N Yıldırım, İ Orak, S Elagöz, A Turut
Physica B: Condensed Matter 457, 48-53, 2015
332015
Temperature-dependent Schottky barrier inhomogeneity of Ni/n-GaAs diodes
N Yildirim, H Korkut, A Türüt
The European Physical Journal-Applied Physics 45 (1), 10302, 2009
332009
The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts
N Yıldırım, A Turut, V Turut
Microelectronic engineering 87 (11), 2225-2229, 2010
312010
Thermal annealing effects on I–V–T characteristics of sputtered Cr/n-GaAs diodes
H Korkut, N Yıldırım, A Turut
Physica B: Condensed Matter 404 (21), 4039-4044, 2009
302009
Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction
A Karabulut, İ Orak, S Canlı, N Yıldırım, A Türüt
Physica B: Condensed Matter 550, 68-74, 2018
292018
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