Prof. Dr. İlbilge Dökme
Title
Cited by
Cited by
Year
The effect of the inquiry-based learning approach on student’s critical thinking skills
M Duran, İ Dökme
Eurasia Journal of Mathematics, Science and Technology Education 12 (12 …, 2016
1812016
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
İ Dökme, Ş Altındal, T Tunç, İ Uslu
Microelectronics Reliability 50 (1), 39-44, 2010
1252010
Frequency and voltage effects on the dielectric properties and electrical conductivity of Al–TiW–Pd2Si/n-Si structures
IM Afandiyeva, İ Dökme, Ş Altındal, MM Bülbül, A Tataroğlu
Microelectronic Engineering 85 (2), 247-252, 2008
1112008
The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range
Ş Altındal, İ Dökme, MM Bülbül, N Yalçın, T Serin
Microelectronic engineering 83 (3), 499-505, 2006
1022006
Density of interface states, excess capacitance and series resistance in the metal–insulator–semiconductor (MIS) solar cells
Ş Altındal, A Tataroğlu, İ Dökme
Solar energy materials and solar cells 85 (3), 345-358, 2005
882005
Milli eğitim bakanlığı ilköğretim 6. sınıf fen bilgisi ders kitabının bilimsel süreç becerileri yönünden değerlendirilmesi
İ Dökme
Elementary Education Online 4 (1), 2005
842005
The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer
İ Dökme, Ş Altindal, MM Bülbül
Applied surface science 252 (22), 7749-7754, 2006
782006
Adaptation of the science, technology, engineering, and mathematics career interest survey (STEM-CIS) into Turkish
ZK UNLU, I Dokme, U Veli
Eurasian Journal of Educational Research 16 (63), 2016
572016
Frequency and gate voltage effects on the dielectric properties of Au/SiO2/n-Si structures
İ Dökme, Ş Altındal, M Gökçen
Microelectronic Engineering 85 (9), 1910-1914, 2008
562008
Anomalous peak in the forward-bias C–V plot and temperature-dependent behavior of Au/PVA (Ni, Zn-doped)/n-Si (111) structures
T Tunç, Ş Altındal, İ Dökme, H Uslu
Journal of electronic materials 40 (2), 157-164, 2011
532011
Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA (Ni, Zn-doped) interfacial layer
T Tunç, Ş Altindal, İ Uslu, İ Dökme, H Uslu
Materials Science in Semiconductor Processing 14 (2), 139-145, 2011
522011
On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures
I Dökme, Ş Altindal
Semiconductor science and technology 21 (8), 1053, 2006
502006
The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes
H Uslu, Ş Altındal, U Aydemir, İ Dökme, IM Afandiyeva
Journal of alloys and compounds 503 (1), 96-102, 2010
492010
İlköğretim 7. sınıf öğrencilerinin fen ve teknoloji dersine yönelik motivasyonlarının bazı değişkenler açısından incelenmesi
R Demir, N Öztürk, İ Dökme
Mehmet Akif Ersoy Üniversitesi Eğitim Fakültesi Dergisi 1 (23), 1-21, 2012
402012
The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices
İ Dökme, T Tunç, İ Uslu, Ş Altındal
Synthetic metals 161 (5-6), 474-480, 2011
402011
Turkish primary school students’ performance on basic science process skills
İ Dökme, E Aydınlı
Procedia-Social and Behavioral Sciences 1 (1), 544-548, 2009
402009
On the intersecting behaviour of experimental forward bias current-voltage (IV) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures
I Dokme, S Altindal
IOP PUBLISHING LTD, 2006
402006
Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes
DE Yıldız, İ Dökme
Journal of applied physics 110 (1), 014507, 2011
392011
The C–V–f and G/ω–V–f characteristics of Au/SiO2/n-Si capacitors
İ Dökme, Ş Altındal
Physica B: Condensed Matter 391 (1), 59-64, 2007
372007
The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes
İ Dökme
Physica B: Condensed Matter 388 (1-2), 10-15, 2007
372007
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Articles 1–20