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Daehwan Jung
Daehwan Jung
Korea Institute of Science and Technology (KIST), UST KIST School, UCSB, Yale University
Verified email at kist.re.kr - Homepage
Title
Cited by
Cited by
Year
Perspective: The future of quantum dot photonic integrated circuits
JC Norman, D Jung, Y Wan, JE Bowers
APL photonics 3 (3), 2018
2402018
A review of high-performance quantum dot lasers on silicon
JC Norman, D Jung, Z Zhang, Y Wan, S Liu, C Shang, RW Herrick, ...
IEEE Journal of Quantum Electronics 55 (2), 1-11, 2019
1862019
1.3 μm submilliamp threshold quantum dot micro-lasers on Si
Y Wan, J Norman, Q Li, MJ Kennedy, D Liang, C Zhang, D Huang, ...
Optica 4 (8), 940-944, 2017
1752017
Next-generation mid-infrared sources
D Jung, S Bank, ML Lee, D Wasserman
Journal of Optics 19 (12), 123001, 2017
1712017
Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si
AY Liu, J Peters, X Huang, D Jung, J Norman, ML Lee, AC Gossard, ...
Optics letters 42 (2), 338-341, 2017
1672017
High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity
S Liu, X Wu, D Jung, JC Norman, MJ Kennedy, HK Tsang, AC Gossard, ...
Optica 6 (2), 128-134, 2019
1602019
Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si
D Jung, R Herrick, J Norman, K Turnlund, C Jan, K Feng, AC Gossard, ...
Applied Physics Letters 112 (15), 2018
1522018
High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si
D Jung, J Norman, MJ Kennedy, C Shang, B Shin, Y Wan, AC Gossard, ...
Applied Physics Letters 111 (12), 2017
1452017
Highly reliable low-threshold InAs quantum dot lasers on on-axis (001) Si with 87% injection efficiency
D Jung, Z Zhang, J Norman, R Herrick, MJ Kennedy, P Patel, K Turnlund, ...
ACS photonics 5 (3), 1094-1100, 2017
1382017
Low threading dislocation density GaAs growth on on-axis GaP/Si (001)
D Jung, PG Callahan, B Shin, K Mukherjee, AC Gossard, JE Bowers
Journal of Applied Physics 122 (22), 2017
1212017
Bright mid-infrared photoluminescence from thin-film black phosphorus
C Chen, F Chen, X Chen, B Deng, B Eng, D Jung, Q Guo, S Yuan, ...
Nano letters 19 (3), 1488-1493, 2019
1102019
Large-area dry transfer of single-crystalline epitaxial bismuth thin films
ES Walker, SR Na, D Jung, SD March, JS Kim, T Trivedi, W Li, L Tao, ...
Nano letters 16 (11), 6931-6938, 2016
1002016
1.3- m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon
J Duan, H Huang, B Dong, D Jung, JC Norman, JE Bowers, F Grillot
IEEE Photonics Technology Letters 31 (5), 345-348, 2019
972019
Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates
Y Wan, Z Zhang, R Chao, J Norman, D Jung, C Shang, Q Li, MJ Kennedy, ...
Optics express 25 (22), 27715-27723, 2017
862017
High performance ultrathin GaAs solar cells enabled with heterogeneously integrated dielectric periodic nanostructures
SM Lee, A Kwong, D Jung, J Faucher, R Biswas, L Shen, D Kang, ML Lee, ...
ACS nano 9 (10), 10356-10365, 2015
792015
Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor
J Duan, H Huang, D Jung, Z Zhang, J Norman, JE Bowers, F Grillot
Applied Physics Letters 112 (25), 2018
762018
Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability
Y Wan, D Inoue, D Jung, JC Norman, C Shang, AC Gossard, JE Bowers
Photonics Research 6 (8), 776-781, 2018
702018
Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon
H Huang, J Duan, D Jung, AY Liu, Z Zhang, J Norman, JE Bowers, ...
JOSA B 35 (11), 2780-2787, 2018
662018
O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si
Y Wan, D Jung, J Norman, C Shang, I MacFarlane, Q Li, MJ Kennedy, ...
Optics express 25 (22), 26853-26860, 2017
632017
490 fs pulse generation from passively mode‐locked single section quantum dot laser directly grown on on‐axis GaP/Si
S Liu, D Jung, JC Norman, MJ Kennedy, AC Gossard, JE Bowers
Electronics Letters 54 (7), 432-433, 2018
622018
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