Scott W. Fong
Scott W. Fong
Verified email at stanford.edu
Title
Cited by
Cited by
Year
Phase-Change Memory--Towards a Storage-Class Memory
SW Fong, CM Neumann, HSP Wong
IEEE Transactions on Electron Devices 64 (11), 4374 - 4385, 2017
1092017
Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single‐Walled Carbon Nanotube/C60 Phototransistor
S Park, SJ Kim, JH Nam, G Pitner, TH Lee, AL Ayzner, H Wang, SW Fong, ...
Advanced materials 27 (4), 759-765, 2015
902015
Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase
R Jeyasingh, SW Fong, J Lee, Z Li, KW Chang, D Mantegazza, M Asheghi, ...
Nano letters 14 (6), 3419-3426, 2014
902014
Energy-efficient phase-change memory with graphene as a thermal barrier
C Ahn, SW Fong, Y Kim, S Lee, A Sood, CM Neumann, M Asheghi, ...
Nano letters 15 (10), 6809-6814, 2015
742015
Picosecond electric-field-induced threshold switching in phase-change materials
P Zalden, MJ Shu, F Chen, X Wu, Y Zhu, H Wen, S Johnston, ZX Shen, ...
Physical review letters 117 (6), 067601, 2016
432016
Stanford memory trends
HSP Wong, C Ahn, J Cao, HY Chen, SW Fong, Z Jiang, C Neumann, ...
tech. report, 2016
382016
Dual-Layer Dielectric Stack for Thermally Isolated Low-Energy Phase-Change Memory
SW Fong, CM Neumann, E Yalon, MM Rojo, E Pop, HSP Wong
IEEE Transactions on Electron Devices 64 (11), 4496-4502, 2017
172017
Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
SW Fong, A Sood, L Chen, N Kumari, M Asheghi, KE Goodson, ...
Journal of Applied Physics 120 (1), 015103, 2016
172016
Influence of defects and doping on optical phonon lifetime and Raman linewidth in carbon nanotubes
D Abdula, KT Nguyen, K Kang, S Fong, T Ozel, DG Cahill, M Shim
Physical Review B 83 (20), 205419, 2011
92011
Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS)
Z Jiang, Z Wang, X Zheng, S Fong, S Qin, HY Chen, C Ahn, J Cao, Y Nishi, ...
2016 IEEE International Electron Devices Meeting (IEDM), 21.3. 1-21.3. 4, 2016
82016
Dual-layer dielectric stack for thermally-isolated low-power phase-change memory
SW Fong, CM Neumann, HSP Wong
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
62017
Phase change memory
R Jeyasingh, EC Ahn, SB Eryilmaz, S Fong, HSP Wong
Emerging Nanoelectronic Devices, 78-109, 2014
42014
Phase change memory
R Jeyasingh, EC Ahn, S Burc Eryilmaz, S Fong, HSP Wong
Emerging Nanoelectronic Devices, 78-109, 2015
32015
Ultrafast Accelerated Retention Test Methodology for RRAM Using Micro Thermal Stage
Z Wang, Z Jiang, X Zheng, S Fong, HY Chen, HSP Wong, Y Nishi
IEEE Electron Device Letters 38 (7), 863-866, 2017
22017
Synaptic Devices Based on Phase-Change Memory
Y Shi, S Fong, HSP Wong, D Kuzum
Neuro-inspired Computing Using Resistive Synaptic Devices, 19-51, 2017
22017
Scanning microwave imaging of optically patterned Ge2Sb2Te5
SR Johnston, E Ng, SW Fong, WY Mok, J Park, P Zalden, A Sakdinawat, ...
Applied Physics Letters 114 (9), 093106, 2019
12019
Steady-state thermal conductivity measurement of dielectric stacks for phase-change memory power reduction
SW Fong, GA Gibson, L Chen, A Sood, M Asheghi, N Kumari, HSP Wong
12015
Bidirectional Analog Conductance Modulation for RRAM-Based Neural Networks
Z Jiang, Z Wang, X Zheng, SW Fong, S Qin, HY Chen, EC Ahn, J Cao, ...
IEEE Transactions on Electron Devices 67 (11), 4904-4910, 2020
2020
Scanning microwave imaging of optically patterned Ge
SR Johnston, E Ng, SW Fong, WY Mok, J Park, P Zalden, A Sakdinawat, ...
2019
Graphene-inserted phase change memory device and method of fabricating the same
Y Kim, C Ahn, A Sood, E Pop, HSP Wong, KE Goodson, S Fong, S Lee, ...
US Patent 9,583,702, 2017
2017
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Articles 1–20