| Review of wearable thermoelectric energy harvesting: From body temperature to electronic systems A Nozariasbmarz, H Collins, K Dsouza, MH Polash, M Hosseini, M Hyland, ... Applied Energy 258, 114069, 2020 | 457 | 2020 |
| Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs W Li, B Romanczyk, M Guidry, E Akso, N Hatui, C Wurm, W Liu, ... IEEE Transactions on Electron Devices 70 (4), 2075-2080, 2023 | 18 | 2023 |
| Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ... Journal of Applied Physics 131 (1), 2022 | 12 | 2022 |
| First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz E Akso, H Collins, C Clymore, W Li, M Guidry, B Romanczyk, C Wurm, ... IEEE Microwave and Wireless Technology Letters, 2023 | 9 | 2023 |
| Record 94 GHz performance from N-polar GaN-on-sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE W Li, B Romanczyk, E Akso, M Guidry, N Hatui, C Wurm, W Liu, ... 2022 International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2022 | 8 | 2022 |
| Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz E Akso, C Clymore, W Liu, H Collins, B Romanczyk, W Li, N Hatui, ... 2023 Device Research Conference (DRC), 1-2, 2023 | 3 | 2023 |
| Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate N Hatui, H Collins, E Kayede, SS Pasayat, W Li, S Keller, UK Mishra Crystals 12 (7), 989, 2022 | 3 | 2022 |
| Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films H Collins, I Sayed, W Liu, SS Pasayat, AA Taylor, W Li, S Keller, ... Applied Physics Letters 119 (4), 2021 | 3 | 2021 |
| First comparison of active and passive load pull at W-band CJ Clymore, E Akso, M Guidry, H Collins, W Liu, C Wurm, N Hatui, ... 2023 101st ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2023 | 2 | 2023 |
| Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz E Akso, H Collins, K Khan, B Wang, W Li, C Clymore, E Kayede, W Liu, ... IEEE Microwave and Wireless Technology Letters, 2024 | 1 | 2024 |
| Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz E Akso, W Li, C Clymore, E O’Malley, M Guidry, J Kim, B Romanczyk, ... IEEE Microwave and Wireless Technology Letters, 2024 | | 2024 |
| N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz H Collins, E Akso, N Hatui, CJ Clymore, C Wurm, R Hamwey, M Guidry, ... IEEE Microwave and Wireless Technology Letters, 2024 | | 2024 |
| Demonstration of 82% relaxed In0. 18Ga0. 82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy K Khan, C Wurm, H Collins, VR Muthuraj, MI Khan, C Lee, S Keller, ... Physica Scripta 99 (1), 015027, 2023 | | 2023 |
| N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization VR Muthuraj, W Liu, H Collins, W Li, R Hamwey, SP DenBaars, UK Mishra, ... Crystals 13 (4), 699, 2023 | | 2023 |
| Demonstration of device-quality InGaN grown on porous GaN tiles by MBE with an in-plane lattice constant equivalent to fully relaxed In0.12Ga0.88N C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ... 2022 Compound Semiconductor Week (CSW), 1-2, 2022 | | 2022 |
