Jawad Ul Hassan
Jawad Ul Hassan
Verified email at - Homepage
Cited by
Cited by
Isolated electron spins in silicon carbide with millisecond coherence times
DJ Christle, AL Falk, P Andrich, PV Klimov, JU Hassan, NT Son, E Janzén, ...
Nature materials 14 (2), 160-163, 2015
Divacancy in 4h-sic
NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ...
Physical review letters 96 (5), 055501, 2006
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
DJ Christle, PV Klimov, CF de las Casas, K Szász, V Ivády, ...
Physical Review X 7 (2), 021046, 2017
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ...
Nature communications 10 (1), 1-8, 2019
Electrical and optical control of single spins integrated in scalable semiconductor devices
CP Anderson, A Bourassa, KC Miao, G Wolfowicz, PJ Mintun, AL Crook, ...
Science 366 (6470), 1225-1230, 2019
Entanglement and control of single nuclear spins in isotopically engineered silicon carbide
A Bourassa, CP Anderson, KC Miao, M Onizhuk, H Ma, AL Crook, H Abe, ...
Nature Materials 19 (12), 1319-1325, 2020
Developing silicon carbide for quantum spintronics
NT Son, CP Anderson, A Bourassa, KC Miao, C Babin, M Widmann, ...
Applied Physics Letters 116 (19), 2020
Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence
C Babin, R Stöhr, N Morioka, T Linkewitz, T Steidl, R Wörnle, D Liu, ...
Nature materials 21 (1), 67-73, 2022
Five-second coherence of a single spin with single-shot readout in silicon carbide
CP Anderson, EO Glen, C Zeledon, A Bourassa, Y Jin, Y Zhu, C Vorwerk, ...
Science advances 8 (5), eabm5912, 2022
Thick silicon carbide homoepitaxial layers grown by CVD techniques
A Henry, J ul Hassan, JP Bergman, C Hallin, E Janzen
Chemical Vapor Deposition 12 (8‐9), 475-482, 2006
Defects and carrier compensation in semi-insulating substrates
NT Son, P Carlsson, J Ul Hassan, B Magnusson, E Janzén
Physical Review B—Condensed Matter and Materials Physics 75 (15), 155204, 2007
Effective mass of electron in monolayer graphene: Electron-phonon interaction
E Tiras, S Ardali, T Tiras, E Arslan, S Cakmakyapan, O Kazar, J Hassan, ...
Journal of Applied Physics 113 (4), 2013
On-axis homoepitaxial growth on Si-face 4H–SiC substrates
J Hassan, JP Bergman, A Henry, E Janzén
Journal of Crystal Growth 310 (20), 4424-4429, 2008
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
N Morioka, C Babin, R Nagy, I Gediz, E Hesselmeier, D Liu, M Joliffe, ...
Nature communications 11 (1), 2516, 2020
Stark tuning and electrical charge state control of single divacancies in silicon carbide
CF de las Casas, DJ Christle, J Ul Hassan, T Ohshima, NT Son, ...
Applied Physics Letters 111 (26), 2017
Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
M Widmann, M Niethammer, DY Fedyanin, IA Khramtsov, T Rendler, ...
Nano letters 19 (10), 7173-7180, 2019
Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
L Spindlberger, A Csóré, G Thiering, S Putz, R Karhu, JU Hassan, NT Son, ...
Physical Review Applied 12 (1), 014015, 2019
Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in -
P Udvarhelyi, G Thiering, N Morioka, C Babin, F Kaiser, D Lukin, ...
Physical Review Applied 13 (5), 054017, 2020
Layer-number determination in graphene on SiC by reflectance mapping
IG Ivanov, JU Hassan, T Iakimov, AA Zakharov, R Yakimova, E Janzén
Carbon 77, 492-500, 2014
Characterization of the carrot defect in 4H-SiC epitaxial layers
J Hassan, A Henry, PJ McNally, JP Bergman
Journal of crystal growth 312 (11), 1828-1837, 2010
The system can't perform the operation now. Try again later.
Articles 1–20