| Hafnium-based high-k gate dielectrics AP Huang, ZC Yang, PK Chu Advances in solid state circuits technologies, 333-350, 2010 | 105 | 2010 |
| Graded AlGaN channel transistors for improved current and power gain linearity S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ... IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017 | 80 | 2017 |
| Unipolar vertical transport in GaN/AlGaN/GaN heterostructures DN Nath, ZC Yang, CY Lee, PS Park, YR Wu, S Rajan Applied Physics Letters 103 (2), 022102, 2013 | 66 | 2013 |
| Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion P Sung Park, KM Reddy, DN Nath, Z Yang, NP Padture, S Rajan Applied Physics Letters 102 (15), 2013 | 36 | 2013 |
| Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation ZC Yang, AP Huang, L Yan, ZS Xiao, XW Zhang, PK Chu, WW Wang Applied Physics Letters 94 (25), 2009 | 26 | 2009 |
| Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin-SiO2/Si p-channel metal-oxide-semiconductor stacks XH Zheng, AP Huang, ZS Xiao, ZC Yang, M Wang, XW Zhang, WW Wang, ... Applied Physics Letters 97 (13), 2010 | 16 | 2010 |
| Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier Z Yang, Y Zhang, DN Nath, JB Khurgin, S Rajan Applied Physics Letters 106 (3), 032101, 2015 | 14 | 2015 |
| Flat-band voltage shift in metal-gate/high-k/Si stacks AP Huang, XH Zheng, ZS Xiao, ZC Yang, M Wang, KC Paul, XD Yang Chinese Physics B 20 (9), 097303, 2011 | 13 | 2011 |
| Fermi-Level Pinning at Metal/High-Interface Influenced by Electron State Density of Metal Gate ZC Yang, AP Huang, XH Zheng, ZS Xiao, XY Liu, XW Zhang, PK Chu, ... IEEE electron device letters 31 (10), 1101-1103, 2010 | 11 | 2010 |
| Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter Z Yang, Y Zhang, S Krishnamoorthy, DN Nath, JB Khurgin, S Rajan Appl. Phys. Lett. 108 (19), 192101, 2016 | 10 | 2016 |
| Recovery of vanadium and nickel from spent-residue oil hydrotreating catalyst by direct acid leaching-solvent extraction Q Teng, ZC Yang, HJ Wang Trans. Nonferrous Met. Soc. China 33 (325), 336, 2023 | 7 | 2023 |
| a.; Idrobo, J.-C.; et al MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ... Appl. Phys. Lett 104 (9), 092104, 2014 | 5 | 2014 |
| N-polar III-Nitride Tunneling Hot Electron Transfer Amplifier Z Yang, DN Nath, Y Zhang, S Rajan Device Research Conference (DRC), 2014 72nd Annual, 173-174, 2014 | 4 | 2014 |
| Small-signal characteristics of graded AlGaN channel PolFETs S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, SH Sohel, S Krishnamoorthy, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 3 | 2017 |
| III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) Z Yang, DN Nath, Y Zhang, S Krishnamoorthy, J Khurgin, S Rajan High-Frequency GaN Electronic Devices, 109-157, 2020 | 1 | 2020 |
| Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors Z Yang, DN Nath, Y Zhang, JB Khurgin, S Rajan IEEE Electron Device Letters 36 (5), 436, 2015 | 1 | 2015 |
| Negative differential resistance in GaN tunneling hot electron transistors Z Yang, D Nath, S Rajan Applied Physics Letters 105 (20), 2014 | 1 | 2014 |
| III-Nitride Hot Electron Transistors for High Speed Electronics Z Yang The Ohio State University, 2020 | | 2020 |
| Modification of a scanning electron microscope (SEM) for insitu, nanometer size contact, electrical measurements of III-nitride transistors C Selcu, Z Yang, S Krishnamoorthy, S Rajan APS March Meeting Abstracts 2016, L7. 004, 2016 | | 2016 |
| Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors Z Yang, Y Zhang, S Krishnamoorthy, DN Nath, JB Khurgin, S Rajan 2015 73rd Annual Device Research Conference (DRC), 53-54, 2015 | | 2015 |
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
