Jian Zhu
Jian Zhu
TDK-Headway, HGST, UC Irvine, USTC
Verified email at uci.edu
Title
Cited by
Cited by
Year
Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions
J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ...
Physical Review Letters 108 (19), 197203, 2012
2492012
Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications
L Thomas, G Jan, J Zhu, H Liu, YJ Lee, S Le, RY Tong, K Pi, YJ Wang, ...
Journal of Applied Physics 115 (17), 172615, 2014
1882014
Voltage-induced switching of nanoscale magnetic tunnel junctions
JG Alzate, PK Amiri, P Upadhyaya, SS Cherepov, J Zhu, M Lewis, ...
2012 International Electron Devices Meeting, 29.5. 1-29.5. 4, 2012
972012
Nonadiabatic stochastic resonance of a nanomagnet excited by spin torque
X Cheng, CT Boone, J Zhu, IN Krivorotov
Physical review letters 105 (4), 47202, 2010
932010
Angular dependence of the superconducting transition temperature in ferromagnet-superconductor-ferromagnet trilayers
J Zhu, IN Krivorotov, K Halterman, OT Valls
Physical review letters 105 (20), 207002, 2010
862010
Origin of the inverse spin switch effect in superconducting spin valves
J Zhu, X Cheng, C Boone, IN Krivorotov
Physical review letters 103 (2), 27004, 2009
822009
Resonant nonlinear damping of quantized spin waves in ferromagnetic nanowires: a spin torque ferromagnetic resonance study
CT Boone, JA Katine, JR Childress, V Tiberkevich, A Slavin, J Zhu, ...
Physical review letters 103 (16), 167601, 2009
812009
Experimental test of an analytical theory of spin-torque-oscillator dynamics
C Boone, JA Katine, JR Childress, J Zhu, X Cheng, IN Krivorotov
Physical Review B 79 (14), 140404, 2009
682009
Method of and apparatus for directional drilling
M Haci, EE Maidla
US Patent 6,802,378, 2004
572004
Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories
G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, RY Tong, K Pi, YJ Wang, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
562014
Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications
Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015
532015
Modified release minerals
M Hermelin, M Grimshaw
US Patent App. 10/115,892, 2003
40*2003
Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms
G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, J Iwata-Harms, S Patel, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
242016
High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory
JM Iwata-Harms, G Jan, H Liu, S Serrano-Guisan, J Zhu, L Thomas, ...
Scientific reports 8 (1), 1-7, 2018
192018
Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device Applications
H Liu, J Zhu, K Pi, RY Tong
US Patent App. 14/278,243, 2015
172015
Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM
L Thomas, G Jan, S Le, YJ Lee, H Liu, J Zhu, S Serrano-Guisan, RY Tong, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.4. 1-26.4. 4, 2015
162015
Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications
G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, J Iwata-Harms, S Patel, ...
2018 IEEE Symposium on VLSI Technology, 65-66, 2018
142018
Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260 C
MC Shih, CY Wang, YH Lee, W Wang, L Thomas, H Liu, J Zhu, YJ Lee, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
142016
Time domain mapping of spin torque oscillator effective energy
GE Rowlands, JA Katine, J Langer, J Zhu, IN Krivorotov
Physical review letters 111 (8), 087206, 2013
142013
Probing magnetic properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR
L Thomas, G Jan, S Le, S Serrano-Guisan, YJ Lee, H Liu, J Zhu, ...
2017 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2017
122017
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